SURFACE MOUNT
VOLTAGE RANGE 50 to 1000 V olts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.0 57 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS
(At TA = 25oC unless otherwise noted)
HFM101W
THRU
HFM108W
SMX
MAXIMUM RA TINGS
(At TA = 25oC unless otherwise noted)
HIGH EFFICIENCY SILICON RECTIFIER
NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2005-10
RATINGS
Maximum Re current Pe ak Reverse V oltage
Maximum RMS Volts
Maximum DC Blocking V oltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps1.0
30
15 -65 to + 150
Amps
pF
0
C
UNITS
12
Maximum DC Reverse Current at
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
nSec
Maximum Full Load Reverse Current, Full cycle Average
TA = 55oC
Maximum Forward Voltage at 1.0A DC Volts
5.0
50Maxi mum Reverse Re covery Time (Note 1)
Rated DC Blocking V oltage
50 uAmps
1.0 1.7
75
50
35
50
100
70
100
300
210
300
400
280
400
800
560
800
1000
700
1000
200
140
200
600
420
600
1.3
@TA = 25oC
@TA = 125oC
100 uAmps
MECHANICAL DA T A
HFM101W HFM102W HFM104W HFM105W HFM107W HFM108WHFM103W HFM106W
HFM101W HFM106WHFM103W HFM107W HFM108W
HFM104W
HFM102W HFM105W
3. ”Fully ROHS compliant”,”100% Sn plating (Pb free).
.209 (5.31)
.185 (4.70)
.091 (2.31)
.067 (1.70)
.
110 (2.79)
.
086 (2.18)
.011 (0.28)
.007 (0.18) .180 (4.57)
.160 (4.06)
.059 (1.50)
.035 (0.89)
.010 (0.25)
.008 (0.20)
.071 (1.80
)
.051 (1.30
)
RECTRON
RATING AND CHARACTERISTIC CURVES ( HFM101W THRU HFM108W )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE 10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A 1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURV
E
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE (
)
2.0
1.0
0 25 50 75 100125150175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
10
1.0
.1
.01
.0010 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
HFM106W~HFM108W
HFM101W~HFM103W
HFM104W~HFM105W
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01 400 20 60 80 100 120 140
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1.1 .2 .4 1.0 2 4 10 20 40 100
HFM101W~HFM105W
HFM106W~HFM108W
TJ = 25
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
70
60
50
40
30
20
10
01 2 5 10 20 50 100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Mounting Pad Layout
RECTRON
0.060 MIN.
(1.52 MIN.)
0.052 MIN.
(1.32 MIN.)
0.220
0.094 MAX.
(2.38 MAX.)
(5.58) REF
Dimensions in inches and (millimeters)
