N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 * VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 * * * Fast Switching Low Threshold Voltage (Logic Level) Low CISS * * * Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS VGS ID IDM PD Drain - Source Voltage Gate - Source Voltage Continuous Drain Current (1) Pulsed Drain Current Total Power Dissipation at PD Total Power Dissipation at TJ Tstg Operating Temperature Range Storage Temperature Range TC = 25C TC 25C De-rate TC > 25C TA 25C De-rate TA > 25C 60V 20V 1.0A 3.0A 5W 40mW/C 725mW 5.8mW/C -65 to +150C -65 to +150C THERMAL PROPERTIES Symbols Parameters Max. Units RJC Thermal Resistance, Junction To Case 25 C/W RJA Thermal Resistance, Junction To Ambient 172 C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width 300us, 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8263 Issue 3 Page 1 of 3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 1.0A 60 VDS = VGS ID = 1.0mA 0.8 TC = 125C 0.3 VGS(th) Gate Threshold Voltage Min. Typ. Gate-Source Leakage Current IDSS Zero Gate Voltage Drain Current ID(ON)(2) On-State Drain Current RDS(on) (2) gfs VSD trr (2) (2) (2) Static Drain-Source On-State Resistance VGS = 20V VGS = 0 Units V 2.0 V TC = -55C IGSS Max. 2.5 VDS = 0V 100 TC = 125C 500 VDS = 48V 1.0 TC = 125C 100 VDS = 10V VGS = 10V VGS = 5V ID = 0.3A 5.0 VGS = 10V ID = 1.0A 3.0 TC = 125C 5.6 1.5 Forward Transconductance VDS = 25V ID = 0.5A 170 Body Diode Forward Voltage VGS = 0 IS = 1.0A 0.7 Body Diode Reverse Recovery VGS = 0 IS = 1.0A nA A A m 1.6 350 V ns DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 50 Coss Output Capacitance VDS = 25V 40 Crss Reverse Transfer Capacitance f = 1.0MHz 10 td(on) Turn-On Delay Time VDD = 25V 10 td(off) Turn-Off Delay Time ID = 1.0A RG = 50 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com 10 pF ns Document Number 8263 Issue 3 Page 2 of 3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO39 PACKAGE (TO-205AD) Pin 1 - Source Pin 2 - Gate Pin 3 / Case - Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8263 Issue 3 Page 3 of 3