N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
8263
Issue
3
Page 1 of
3
2N6660
VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
Integral Source-Drain Body Diode
Hermetic Metal TO39 Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VDS Drain – Source Voltage 60V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current TC = 25°C 1.0A
IDM Pulsed Drain Current
(1)
3.0A
PD Total Power Dissipation at TC 25°C 5W
De-rate TC > 25°C 40mW/°C
PD Total Power Dissipation at TA 25°C 725mW
De-rate TA > 25°C 5.8mW/°C
TJ Operating Temperature Range -65 to +150°C
Tstg Storage Temperature Range -65 to +150°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 25 °C/W
RθJA
Thermal Resistance, Junction To Ambient 172 °C/W
Notes
NotesNotes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width 300us, δ 2%
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
8263
Issue
3
Page 2 of
3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = 1.0µA 60 V
VGS(th) Gate Threshold Voltage
VDS = VGS ID = 1.0mA 0.8 2.0
V TC = 125°C 0.3
TC = -55°C 2.5
IGSS Gate-Source Leakage Current
VGS = ±20V VDS = 0V ±100 nA
TC = 125°C ±500
IDSS Zero Gate Voltage
Drain Current
VGS = 0 VDS = 48V 1.0 µA
TC = 125°C 100
ID(ON)
(2)
On-State Drain Current VDS = 10V VGS = 10V 1.5 A
RDS(on)
(2)
Static Drain-Source
On-State Resistance
VGS = 5V ID = 0.3A 5.0
VGS = 10V ID = 1.0A 3.0
TC = 125°C 5.6
gfs
(2)
Forward Transconductance VDS = 25V ID = 0.5A 170 mƱ
VSD
(2)
Body Diode Forward Voltage VGS = 0 IS = 1.0A 0.7 1.6 V
trr
(2)
Body Diode Reverse Recovery VGS = 0 IS = 1.0A 350 ns
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 50
pF
Coss Output Capacitance VDS = 25V 40
Crss Reverse Transfer Capacitance f = 1.0MHz 10
td(on) Turn-On Delay Time VDD = 25V 10
ns
td(off) Turn-Off Delay Time ID = 1.0A RG = 50 10
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
8263
Issue
3
Page 3 of
3
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
TO3
9
PACKAGE
-
20
5
A
D
)
Pin 1 - Source Pin 2 - Gate Pin 3 / Case - Drain