FCA20N60 — N-Channel SuperFET® MOSFET
©2008 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
Publication Order Number:
FCA20N60/D
FCA20N60
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features
• 650V @ TJ = 150°C
•Typ. R
DS(on) = 150 mΩ
• Ultra Low Gate Charge (Typ. Qg = 75 nC )
• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
• 100% Avalanche Tested
Applications
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® MOSFET is ON Semiconductor’s first genera-tion
of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
TO-3PN
GDS
G
S
D
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Thermal Characteristics
Symbol Parameter FCA20N60 /
FCA20N60-F109 Unit
VDSS Drain to Source Voltage 600 V
VGSS Gate-Soure voltage ±30 V
IDD r a i n C u r r e n t - Continuous (TC = 25oC) 20 A
- Continuous (TC = 100oC) 12.5
IDM D r a i n C u r r e n t - P u l s e d (Note 1) 60 A
EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ
IAR Avalanche Current (Note 1) 20 A
EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PDPower Dissipation (TC = 25oC) 208 W
- Derate Above 25oC1.67W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TLMaximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FCA20N60 /
FCA20N60_F109 Unit
RθJC Thermal Resistance, Junction to Case, Max. 0.6 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 41.7
FCA20N60 — N-Channel SuperFET® MOSFET
www.onsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted.
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FCA20N60 FCA20N60 TO-3PN Tube N/A N/A 30 units
FCA20N60-F109 FCA20N60 TO-3PN Tube N/A N/A 30 units
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V, TJ = 25oC 600 - - V
ID = 250 μA, VGS = 0 V, TJ = 150oC- 650 - V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, Referenced to 25oC-0.6-V/
oC
BVDS
Drain-Source Avalanche Breakdown
Voltage VGS = 0 V, ID = 20 A - 700 - V
IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V - - 1 μA
VDS = 480 V, TC = 125oC--10
IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 10 A - 0.15 0.19 Ω
gFS Forward Transconductance VDS = 40 V, ID = 10 A - 17 - S
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1 MHz
- 2370 3080 pF
Coss Output Capacitance - 1280 1665 pF
Crss Reverse Transfer Capacitance - 95 - pF
Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1 MHz - 65 85 pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V - 165 - pF
QgTotal Gate Charge at 10V VDS = 480 V, ID = 20 A,
VGS = 10 V
(Note 4)
-7598nC
Qgs Gate to Source Gate Charge - 13.5 18 nC
Qgd Gate to Drain “Miller” Charge - 36 - nC
td(on) Turn-On Delay Time
VDD = 300 V, ID = 20 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
- 62 135 ns
trTurn-On Rise Time - 140 290 ns
td(off) Turn-Off Delay Time - 230 470 ns
tfTurn-Off Fall Time - 65 140 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 20 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A
VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 20 A - - 1.4 V
trr Reverse Recovery Time VGS = 0 V, ISD = 20 A,
dIF/dt = 100 A/μs
- 530 - ns
Qrr Reverse Recovery Charge - 10.5 - μC
Notes:
1: Repetitive rating: pulse-width limited by maximum junction temperature.
2: IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3: ISD ≤ 20 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4: Essentially independent of operating temperature typical characteristics.
FCA20N60 — N-Channel SuperFET® MOSFET
www.onsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10-1 100101
100
101
102
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
246810
100
101
102
-55oC
25oC
* Note
1. VDS = 40V
2. 250μs Pulse Test
150oC
ID , Drain Current [A]
VGS , Gate-Source Voltage [V]
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
0.0
0.1
0.2
0.3
0.4
VGS = 20V
VGS = 10V
* Note : TJ = 25oC
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100
101
102
25oC
150oC
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
IDR , Reverse Drain Current [A]
VSD , Source-Drain Voltage [V]
10-1 100101
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
* Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
0 1020304050607080
0
2
4
6
8
10
12
VDS = 250V
VDS = 100V
VDS = 400V
* Note : ID = 20A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
FCA20N60 — N-Channel SuperFET® MOSFET
www.onsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100 -50 0 50 100 150 200
0.8
0.9
1.0
1.1
1.2
* Notes :
1. VGS = 0 V
2. ID = 250 μA
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
-100 -50 0 50 100 150 200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
* Notes :
1. VGS = 10 V
2. ID = 20 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
100101102103
10-2
10-1
100
101
102
Operation in This Area
is Limited by R DS(on)
DC
10 ms
1 ms
100 us
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
5
10
15
20
25
ID, Drain Current [A]
TC, Case Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
* Notes :
1. ZθJC(t) = 0.6oC/W Max.
2. D uty F actor, D =t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJC(t), Thermal Response
t1, Square W ave Pulse D uration [sec]
t1
PDM
t2
Z
θ
JC
(t), Thermal Response [
o
C/W]
t
1
, Rectangular Pulse Duration [sec]
FCA20N60 — N-Channel SuperFET® MOSFET
www.onsemi.com
5
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
IG = const.
FCA20N60 — N-Channel SuperFET® MOSFET
www.onsemi.com
6
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
❖