ZXMP4A16K
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at TA = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage
V(BR)DSS -40 V ID=-250A, VGS=0V
Zero gate voltage drain current IDSS -1 AV
DS=-40V, VGS=0V
Gate-body leakage IGSS 100 nA VGS =±20V, VDS=0V
Gate-source threshold voltage VGS(th) -1.0 V ID=-250A,
VDS=VGS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Width ⱕ 300µs. Duty cycle ⱕ 2%.
RDS(on) 0.060 ⍀VGS=-10V, ID=-3.8A
0.100 ⍀VGS=-4.5V, ID=-2.9A
Forward transconductance (*)(‡) gfs 7.4 S VDS=-15V,ID=-3.8A
Dynamic (‡)
Input capacitance Ciss 965 pF
VDS=-20V, VGS=0V,
f=1MHz
Output capacitance Coss 180 pF
Reverse transfer capacitance Crss 158 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time td(on) 4.0 ns
VDD =-20V, ID=-1A
RG=6.0⍀,VGS=-10V
Rise time tr 6.0 ns
Turn-off delay time td(off) 36.8 ns
Fall time tf 17.1 ns
Gate charge Qg 16.5 nC VDS=-20V,VGS=-5V,
ID=-3.8A
Total gate charge Qg 29.6 nC
VDS=-20V,VGS=-10V,
ID=-3.8A
Gate-source charge Qgs 2.8 nC
Gate-drain charge Qgd 8.1 nC
Source-drain diode
Diode forward voltage (*) VSD -0.89 -1.2 V TJ=25°C, IS=-3.8A,
VGS=0V
Reverse recovery time (‡) trr 29.8 ns TJ=25°C, IF=-3.8A,
di/dt= 100A/s
Reverse recovery charge (‡) Qrr 37.2 nC