75 A
95 A
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
IRK.71, .91 SERIES
Bulletin I27132 rev. H 10/02
1
www.irf.com
Parameters IRK.71 IRK.91 Units
IT(AV) or IF(AV)
@ 85°C
IO(RMS) (*) 165 210 A
ITSM @ 50Hz 1665 1785 A
IFSM @ 60Hz 1740 1870 A
I2t @ 50Hz 13.86 15.91 KA2s
@ 60Hz 12.56 14.52 KA2s
I2√t 138.6 159.1 KA2√s
VRRM range 400 to 1600 V
TSTG - 40 to 125 oC
TJ- 40 to125 oC
(*) As AC switch.
75 95 A
Major Ratings and Characteristics
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
IRK.71, .91 Series
2
Bulletin I27132 rev. H 10/02
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On-state Conduction
IT(AV) Max. average on-state
current (Thyristors) 180o conduction, half sine wave,
IF(AV) Max. average forward TC = 85oC
current (Diodes)
IO(RMS)Max. continuous RMS
on-state current. 165 210
As AC switch
ITSM Max. peak, one cycle 1665 1785 t=10ms No voltage
or non-repetitive on-state 1740 1870 t=8.3ms reapplied
IFSM or forward current 1400 1500 t=10ms 100% VRRM
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms TJ = 25oC,
1940 2100 t=8.3ms no voltage reapplied
I2 t Max. I2t for fusing 13.86 15.91 t=10ms No voltage
12.56 14.52 t=8.3ms reapplied
9.80 11.25 t=10ms 100% VRRM
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms TJ = 25oC,
15.60 18.30 t= 8.3ms no voltage reapplied
I2√t Max. I2√t for fusing (1) 138.6 159.1 KA2√s t=0.1 to 10ms, no voltage reapplied
VT(TO) Max. value of threshold 0.82 0.80 Low level (3)
voltage (2) 0.85 0.85 High level (4)
rtMax. value of on-state 3.00 2.40 Low level (3)
slope resistance (2) 2.90 2.25 High level (4)
VTM Max. peak on-state or ITM = π x IT(AV)
VFM forward voltage IFM = π x IF(AV)
di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,
of rise of turned on 150 A/µs ITM =π x IT(AV), Ig = 500mA,
current tr < 0.5 µs, tp > 6 µs
IHMax. holding current 200 TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
ILMax. latching current 400 TJ = 25oC, anode supply = 6V, resistive load
Parameters IRK.71 IRK.91 Units Conditions
Initial TJ = TJ max.
A
KA2s
V
mΩ
1.59 1.58 V
mA
or
I(RMS) I(RMS)
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM
Voltage repetitive non-repetitive peak off-state voltage, IDRM
Code peak reverse voltage peak reverse voltage gate open circuit 125°C
-VVVmA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
Sinusoidal
half wave,
Initial TJ = TJ max.
75 95
TJ = TJ max
TJ = TJ max
TJ = 25°C
(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV
IRK.71, .91 Series
3
Bulletin I27132 rev. H 10/02
www.irf.com
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
2500 (1 min) 50 Hz, circuit to base, all terminals
3500 (1 sec) shorted
dv/dt Max. critical rate of rise TJ = 125oC, linear to 0.67 VDRM,
of off-state voltage (5) gate open circuit
TJJunction operating
temperature range
Tstg Storage temp. range - 40 to 125
RthJC Max. internal thermal
resistance, junction 0.165 0.135 Per module, DC operation
to case
RthCS Typical thermal resistance
case to heatsink
T Mounting torque ± 10%
to heatsink
busbar 3
wt Approximate weight 110 (4) gr (oz)
Case style TO-240AA JEDEC
15 mA TJ = 125 oC, gate open circuit
Thermal and Mechanical Specifications
500 V/µs
Parameters IRK.71 IRK.91 Units Conditions
- 40 to 125
0.1
5
Triggering
Blocking
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
K/W
Nm
Mounting surface flat, smooth and greased
VINS RMS isolation voltage V
PGM Max. peak gate power 12 12
PG(AV) Max. average gate power 3.0 3.0
IGM Max. peak gate current 3.0 3.0 A
-VGM Max. peak negative
gate voltage
VGT Max. gate voltage 4.0 TJ = - 40°C
required to trigger 2.5 TJ = 25°C
1.7 TJ = 125°C
IGT Max. gate current 270 TJ = - 40°C
required to trigger 150 mA TJ = 25°C
80 TJ = 125°C
VGD Max. gate voltage TJ = 125oC,
that will not trigger rated VDRM applied
IGD Max. gate current TJ = 125oC,
that will not trigger rated VDRM applied
Parameters IRK.71 IRK.91 Units Conditions
0.25 V
6mA
W
V
10
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
°C
Parameters IRK.71 IRK.91 Units Conditions
Sine half wave conduction Rect. wave conduction
Devices Units
180o120o90o60o30o180o120o90o60o30o
IRK.71 0.06 0.07 0.09 0.12 0.18 0.04 0.08 0.10 0.13 0.18
IRK.91 0.04 0.05 0.06 0.08 0.12 0.03 0.05 0.06 0.08 0.12 °C/W
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
IRK.71, .91 Series
4
Bulletin I27132 rev. H 10/02
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Outline Table
Dimensions are in millimeters and [inches]
IRK T 91 / 16 A S90
Device Code
12 3 45
1- Module type
2- Circuit configuration (See Circuit Configuration table below)
3- Current code * *
4- Voltage code (See Voltage Ratings table)
5- A : Gen V
6- dv/dt code: S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Ordering Information Table
6
* * Available with no auxiliary cathode.
To specify change: 71 to 72
91 to 92
e.g. : IRKT92/16A etc.
IRK.92 types
With no auxiliary cathode
NOTE: To order the Optional Hardware see Bulletin I27900
+
K2 G2
-
K1G1
~
(1)
(2)
(3)
(4) (5) (7) (6)
+
-
K1
G1
~
(1)
(2)
(3)
(4) (5)
+
-
~
(1)
(2)
(3)
K2
(7)
G2
(6)
IRKT IRKH IRKL IRKN
+
-
K1
G1
+
(1)
(2)
(3)
(4) (5)
IRK.71, .91 Series
5
Bulletin I27132 rev. H 10/02
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 1020304050607080
Maximum Allowable Case Temperature (°C)
30° 60° 90° 120° 180°
Average On-state Current (A)
Conduction Angle
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
70
80
90
100
110
120
130
0 20 40 60 80 100 120
DC
30° 60°90°120° 180°
Average On-state Current (A)
Maximum Allowable Case Temperatu re (°C)
Conduction Period
IRK.71.. Series
R (DC) = 0.33 K/W
thJC
Fig. 3 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 4 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
0 1020304050607080
180°
120°
90°
60°
30°
RMS Limit
Conducti on Angle
Maxim um Average On-state Po wer Loss ( W)
Average On-state Current (A)
IRK.71 .. Series
Per Ju n ct i o n
T = 12 5° C
J
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state P ower Loss (W)
Ave ra ge On-state C ur rent (A)
IRK .7 1 .. Serie s
Per Junction
T = 125°C
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
110100
Numb er Of Eq ual Amplit ude Half Cyc le Cu rrent Pul ses (N)
Pea k Half Sine Wav e On- sta te C urrent (A)
Initial T = 125°C
@ 60 Hz 0. 00 83 s
@ 50 Hz 0. 01 00 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
IR K.71 .. Series
Per Junction
600
800
1000
1200
1400
1600
1800
0.01 0.1 1
Peak Half S ine Wave On-s tat e Current (A)
Pu l se Train Duration (s)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
Of Conduction May Not Be Maintained.
RRM
J
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
IR K.7 1 .. Series
Per Junction
IRK.71, .91 Series
6
Bulletin I27132 rev. H 10/02
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Fig. 9 - On-state Power Loss Characteristics
Fig. 8 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allowa b le Ambient Temperature (°C)
R = 0.1 K/W - Delta R
thSA
0.3 K/W
0.5 K/W
1 K/W
2 K/W
0.2 K/W
0
100
200
300
400
500
600
0 20 40 60 80 100 120 140 160 180
Total O utpu t C urren t ( A)
Maxi m um Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x IRK.71.. Series
Single Phase Bridge
Connected
T = 125°C
J
0 20 40 60 80 100 120 140
Maximum Allowabl e Ambi ent Temperature (° C)
1 K/W
0.5 K/W
0.3 K/W
R = 0.1 K/W - Delta R
0.2 K/W
thSA
0
100
200
300
400
500
600
700
800
0 40 80 120 160 200 240
Total Output Current (A)
Maximum Total Powe r L os s (W)
120°
(Rect)
3 x IRK.71.. S eri es
Three Phase Bri dge
Connected
T = 125°C
J
Fig. 7 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Amb ient Temp er a ture (°C )
R = 0.1 K/W - Delta R
thSA
3 K/W
1.5 K/W
1 K/W
0.7 K/W
0.5 K/W
0.4 K/W
0.3 K/W
0.2 K/W
0
50
100
150
200
250
0 20 40 60 80 100 120 140 160 180
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
IRK.71.. Series
Per Module
T = 125°C
J
IRK.71, .91 Series
7
Bulletin I27132 rev. H 10/02
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Fig. 11 - Current Ratings CharacteristicsFig. 10 - Current Ratings Characteristics
70
80
90
100
110
120
130
0 20 40 60 80 100
30° 60° 90° 120° 180°
Average On-state Current (A)
Maxi mum Allowab le Case Temperature (°C)
Conduction Angle
IRK.91.. Series
R (DC) = 0.27 K/W
thJC
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160
DC
30° 60°
90°120°180°
Av e rage On-state Current (A)
Maximum Allowable Cas e Temperature (°C)
Conduc tion Pe riod
IRK.91.. Series
R ( DC) = 0.27 K/W
thJC
Fig. 14 - Maximum Non-Repetitive Surge Current Fig. 15 - Maximum Non-Repetitive Surge Current
Fig. 13 - On-state Power Loss CharacteristicsFig. 12 - On-state Power Loss Characteristics
0
20
40
60
80
100
120
140
0 20406080100
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
180°
120°
90°
60°
30°
IRK.91.. Series
Per Juncti o n
T = 125°C
J
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160
DC
180°
120°
90°
60°
30°
RMS Limi t
Conduction Period
Maxim um A verage On-state Po we r Loss (W)
Average On-state Current (A)
IRK.91.. Series
Per J unction
T = 125°C
J
700
800
900
1000
1100
1200
1300
1400
1500
1600
110100
Nu mb e r O f E qu a l Am pli tu de Ha l f C yc le C u r r e nt Pu ls e s ( N)
Peak Half S ine Wave On-state Current (A)
Initial T = 1 25 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
IRK.91.. Series
Per Junction
600
800
1000
1200
1400
1600
1800
0.01 0.1 1
P ea k Half Sine Wa ve O n-state Curr en t (A)
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Of Conduction May Not Be Maintained.
Maximum Non Repetitive Surge Current
IR K.91.. Series
Per Junction
IRK.71, .91 Series
8
Bulletin I27132 rev. H 10/02
www.irf.com
Fig. 17 - On-state Power Loss Characteristics
Fig. 18 - On-state Power Loss Characteristics
0 20406080100120140
Maximum Allowable Ambient Temperature (°C)
0.5 K/W
0.3 K/W
0.2 K/W
R = 0.1 K/W - Delta R
1 K/W
2 K/W
thSA
0
100
200
300
400
500
600
0 40 80 120 160 200
Total Outpu t Current (A )
Maxi mum Tota l Power L o ss ( W)
180°
(Sine)
180°
(Rect)
2 x IRK.91.. Series
Single Phase Bridge
Connected
T = 125°C
J
0 20 40 60 80 100 120 140
Maximum A llowable Ambient Temperature (°C)
0.5 K/W
1 K/W
0.3 K/W
0.2 K/W
R = 0.1 K/W - Delta R
thSA
0
100
200
300
400
500
600
700
800
900
0 40 80 120 160 200 240 280
Total Outpu t Curre n t (A )
Maximum Total Power Loss (W)
120°
(Rect)
3 x IRK.91.. Series
Three Phase Bridge
Connected
T = 125°C
J
Fig. 16 - On-state Power Loss Characteristics
0 20 40 60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
1.5 K/W
3 K/W
1 K/W
0.7 K/W
0.5 K/W
0.3 K/W
0.2 K/W
R = 0.1 K/W - Delta R
thSA
0
50
100
150
200
250
300
350
0 40 80 120 160 200 240
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W)
Conduction Angle
IRK.91.. Series
Per Module
T = 125°C
J
IRK.71, .91 Series
9
Bulletin I27132 rev. H 10/02
www.irf.com
Fig. 19 - On-state Voltage Drop Characteristics Fig. 20 - On-state Voltage Drop Characteristics
1
10
100
1000
0.511.522.533.5
T = 25°C
J
Inst antaneous On -state Current ( A)
Instantaneous On-sta te Volta ge (V)
T = 125°C
J
IRK.91.. Series
Per Junction
1
10
100
1000
0.511.522.533.54
T = 25°C
J
Instantaneou s O n- state Current (A )
Instantaneous On-state Voltage (V)
T = 125°C
J
IRK.71.. Series
Per Junction
Fig. 23 - Thermal Impedance ZthJC Characteristics
Fig. 22 - Recovery Current CharacteristicsFig. 21 - Recovery Charge Characteristics
20
40
60
80
100
120
140
10 20 30 40 50 60 70 80 90 100
Ma ximum Reverse Reco very Current - Irr ( A)
Rate Of Fall Of Forward Current - di/dt (A/µs)
100 A
50 A
I = 200 A
TM
20 A
10 A
IRK.71.. Series
IRK.91.. Series
T = 1 25 °C
J
100
200
300
400
500
600
700
10 20 30 40 50 60 70 80 90 100
100 A
50 A
Rate O f Fall Of On- state C ur re nt - d i/dt (A/µ s)
Maximum Reverse Recovery Charge - Qrr (µC)
I = 200 A
TM
20 A
10 A
IRK.7 1 .. Ser ies
IRK.9 1 .. Ser ies
T = 125 °C
J
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Imp edan ce Z (K/W)
Per Junction
Steady State Val ue:
R = 0.33 K/W
R = 0.27 K/W
(DC Opera tio n )
IRK.71.. Series
IRK.91.. Series
thJC
thJC
IRK.71, .91 Series
10
Bulletin I27132 rev. H 10/02
www.irf.com
Fig. 24 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
(b)
(a)
Rectangular gate pulse
(4) (3) (2) (1)
Instantaneous Gate Cu rrent (A)
Ins tantaneous Ga te Volta g e (V)
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
a)Recomm ended load line f o r
b)Rec ommen ded load line for
VGD
IGD
Frequency Limited by PG(AV)
(1) PG M = 200 W, tp = 3 00 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
IRK.71../.91.. Series
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
