©
1993
DATA SHEET
Document No. P11304EJ3V0DS00 (3rd edition)
(Previous No. LC-2305A)
Date Published February 1996 P
Printed in Japan
PHOTOCOUPLERS
PS2503 -1, -2, -4
PS2503L-1, -2, -4
DESCRIPTION
PS2503-1, -2, -4 and PS2503L-1, -2, -4 series are optically coupled isolator containing a GaAs light emitting diode
and an NPN silicon phototransistor.
PS2503-1, -2, -4 are in a plastic DIP (Dual In-line Package) and PS2503L-1, -2, -4 are lead bending type (Gull-
wing) for surface mount.
FEATURES
• High isolation voltage (BV: 5 000 Vr.m.s. MIN.)
• High speed switching (tr = 20
µ
s, tf = 30
µ
s TYP., @RL = 10 kΩ)
• High current transfer ratio (CTR: 100 % MIN. @IF = 1 mA, VCE = 5 V)
• Taping Product number (PS2503L-1-E3, E4, F3, F4)
(PS2503L-2-E3, E4)
• UL recognized [File No. E72422(S)]
APPLICATIONS
Interface circuit for various instrumentations, control equipments.
• AC Line/Digital Logic .................................................. Isolate high voltage transients
• Digital Logic/Digital Logic ........................................... Eliminate spurious ground loops
• Twisted pair line receiver ........................................... Eliminate ground look pick-up
• Telephone/Telegraph line receiver ............................ Isolate high voltage transients
• High Frequeny Power Supply Feedback Control...... Maintain floating ground
• Relay Contact Monitor ................................................ Isolate floating grounds and transients
• Power Supply Monitor ................................................ Isolate transients and ground systems
LOW INPUT CURRENT, HIGH SPEED SWITCHING
MULTI PHOTOCOUPLER SERIES
2
PS2503-1, -2, -4, PS2503L-1, -2, -4
(PS2503-1) (PS2503-2, 4)
(PS2503L-1) (PS2503L-2, 4)
Diode
Reverse Voltage VR66V
Forward Current (DC) IF80 80 mA
Power Dissipation Derating ∆PD/˚C 1.5 1.2 mW/˚C
Power Dissipation PD150 120 mW/Channel
Peak Forward Current IF(Peak) 11A
(PW = 100
µ
s, Duty Cycle 1 %)
Transistor
Collector to Emitter Voltage VCEO 40 40 V
Emitter to Collector Voltage VECO 0.6 0.6 V
Collector Current IC30 30 mA
Power Dissipation Derating ∆PC/˚C 1.5 1.2 mW/˚C
Power Dissipation PC150 120 mW/Channel
Coupled
Isolation Voltage*1 BV 5 000 5 000 Vr.m.s.
Storage Temperature Tstg –55 to +150 –55 to +150 °C
Operating Temperature Topt –55 to +100 –55 to +100 °C
Lead Temperature (Soldering 10 s) Tsol 260 260 °C
*1 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Forward Voltage VF1.1 1.3 V IF = 1 mA
Diode Reverse Current IR5
µ
AVR = 5 V
Junction Capacitance Ct50 pF V = 0, f = 1 MHz
Transistor Collector to Emitter Dark Current ICEO 100 nA VCE = 40 V, IF = 0
Current Transfer Ratio*2CTR 100 200 400 % IF = 1 mA, VCE = 5 V
Collector Saturation Voltage VCE(sat) 0.25 V IF = 1 mA, IC = 0.2 mA
Coupled Isolation Resistance R1-2 1011 ΩVin-out = 1 kV
Isolation Capacitance C1-2 0.5 pF V = 0, f = 1 MHz
Rise Time*3tr20
µ
s
V
CC
= 5 V, I
F
= 1 mA, R
L
= 10 kΩ
Fall Time*3tf30
µ
s
V
CC
= 5 V, I
F
= 1 mA, R
L
= 10 kΩ
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
*2 CTR rank (only PS2503-1, PS2503L-1)
K : 200 to 400
L : 150 to 300
M: 100 to 200
*3 Test Circuit for Switching Time
V
CC
V
OUT
R
L
= 10 kΩ
I
F
50 Ω
PULSE INPUT
PW = 100 s
Duty Cycle
= 1/10
µ
3
PS2503-1, -2, -4, PS2503L-1, -2, -4
TYPICAL CHARACTERISTICS (TA = 25 °C)
150
100
50
025 50 75 100 125 150
PS2503-2
PS2503-4
PS2503L-2
PS2503L-4
PS2503-1
PS2503L-1
1.5 mW / °C
1.2 mW / °C
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
100
50
0 25 50 75 100 125 150
PS2503-2
PS2503-4
PS2503L-2
PS2503L-4
PS2503-1
PS2503L-1
1.5 mW / °C
1.2 mW / °C
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
V = 40 V
30 V
20 V
10 V
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
100
50
10
5.0
1.0
0.3 –25 0 25 50 75 100
CE
COLLECTOR CURRENT vs.
COLLECTOR SATURA TION VOLTAGE
30
10
5
1.0
0.5
0.1 0 0.2 0.4 0.6 0.8 1.0
10 mA
5 mA
I
F
= 0.8 mA
2 mA
1 mA
T
A
- Ambient Temperature - ˚C T
A
- Ambient Temperature - ˚C
P
D
- Diode Power Dissipation - mW
P
C
- T ransistor Power Dissipation - mW
V
F
- Forward V oltage - V
V
CE
- Collector to Emitter V oltage - V
I
F
- Forward Current - mA
I
C
- Collector Current - mA
T
A
- Ambient Temperature - ˚C V
CE(sat)
- Collector tSaturation V oltage - V
I
CEO
- Collector to Emitter Dark Current - nA
I
C
- Collector Current - mA
100
FORWARD CURRENT vs.
FORWARD VOLTAGE
1.5
1.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
100 °C
60 °C
25 °C
0 °C
–25 °C
–55 °C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
12
10
8
6
4
2
02468
10
4 mA
3 mA
2 mA
1.5 mA
1 mA
0.8 mA
I
F
= 0.6 mA
5 mA
4
PS2503-1, -2, -4, PS2503L-1, -2, -4
5
400
300
200
100
00.3 0.5 1 10 100
CURRENT TRANSFER RA TIO (CTR) vs.
FORW ARD CURRENT
50
CTR - Current T ransfer Ratio - %
I
F
- Forward Current - mA
30
NORMALIZED OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
1.0
0.8
0.6
0.4
0.2
00 25 50 75 100
Normalized to 1.0
at T
A
= 25 °C
I
F
= 1 mA, V
CE
= 5 V
1.2
1.4
50 SWITCHING TIME vs. LOAD RESIST ANCE
10
1
10 k
5 k1 k500100
t
f
t
r
t
d
100 k50 k
0.5
5
t
s
V
CC
V
O
R
L
50 Ω
I
F
I
F
= 1 mA, V
CC
= 5 V
Sample : CTR 209 %
at I
F
= 1 mA
0.1
Sample CTR = 290 %
500 SWITCHING TIME vs. AMBIENT TEMPERA TURE
100
10
11007550250–25–50
t
s
t
d
t
r
t
f
R
L
= 10 kW
I
F
= 1 mA
V
CC
= 5 V
50
5
100
0
3.0
6.0
9.0
12.0
1 M1 k 10 k 100 k
FREQUENCY
1001 k
V
CC
= 5 V
Sample
CTR = 209 %
15.0
5.6 k
1.0
0.8
0.6
0.4
0.2
010
5
LONG TERM CTR DEGRADATION
I
F
= 5 mA
T
A
= 25 °C
I
F
= 5 mA
T
A
= 60 °C
10
4
10
3
10
2
1.2 TYP.
CTR - Normalized Output current
T
A
- Ambient Temperature - ˚C
t - Switching T ime - s
µ
t - Switching T ime - s
R
L
- Load Resistance - Ω
µ
T
A
- Ambient Temperature - ˚C
A
V
- Relative V oltage Gain - dB
f - Frequency - Hz
CTR - Normalized
T ime - Hr
5
PS2503-1, -2, -4, PS2503L-1, -2, -4
SOLDERING PRECAUTION
(1) Infrared reflow soldering
• Peak reflow temperature : 235 °C or below (Plastic surface temperature)
• Reflow time : 30 seconds or less (Time period during which the plastic surface
temperature is 210 °C)
• Number of reflow processes : Three
• Flux : Rosin flux containing small amount of chlorine
(The flux with a maximum chlorine content of 0.2 Wt % is recommended.)
(2) Dip soldering
• Peak temperature : 260 °C or lower
• Time : 10 s or less
• Flux : Rosin-base flux
to 30 s
60 to 90 s
(PRE-HEAT)
235
o
C MAX
210
o
C
(ACTUAL HEAT)
120 to 160
o
C
PACKAGE’S SURFACE TEMPERATURE (
o
C)
TIME (s)
REFLOW TEMPERATURE PROFILE
Peak Temperature 235 °C or Lower
to 10 s
6
PS2503-1, -2, -4, PS2503L-1, -2, -4
• 4 Pin DIP Type (Lead bending; –1 channel) Taping
1. TAPING DIRECTION
PS2503L-1-E3, F3
NEC
2503
•
KD201
NEC
2503
•
KD201
NEC
2503
•
KD201
PS2503L-1-E4, F4
NEC
2503
•
KD201
NEC
2503
•
KD201
NEC
2503
•
KD201
2. OUTLINE AND DIMENSIONS (;TAPE)
P0
P2
FE
W
B
T1
T0
D1
D0
P1
A
3. OUTLINE AND DIMENSIONS (;REEL)
W
A
18.0 ±0.5
φ
21 ±0.8
φ
2 ±0.5
R1.0
4. PACKING
E3, E4; 1000 pieces/reel
F3, F4; 2000 pieces/reel
SYMBOL RATINGS
E3, E4 F3, F4
A250 330
N 80 ± 5.0
W 16.4 +2.0
–0
Unit: mm
SYMBOL RATINGS
A 5.6 ± 0.1
B 10.3 ± 0.1
D0 1.55 ± 0.1
D1 1.55 ± 0.1
E 1.75 ± 0.1
F 7.5 ± 0.1
P1 8 ± 0.1
P0 4 ± 0.1
P2 2 ± 0.1
T0 4.3 ± 0.2
T1 0.3
W 16 ± 0.3
Unit: mm
7
PS2503-1, -2, -4, PS2503L-1, -2, -4
• 8 Pin DIP Type (Lead bending; –2 channel) Taping
1. TAPING DIRECTION
PS2503L-2-E4
PS2503L-2-E3
NEC JA
PS2503
•
ND1
NEC JAPAN
PS2503-2
•
ND101
NEC JAPAN
PS2503-2
•
ND101
APAN
03-2
101
2. OUTLINE AND DIMENSIONS (;TAPE)
P0
P2
FE
W
B
P1
A
T1
T0
D1
D0
3. OUTLINE AND DIMENSIONS (;REEL)
W
A
18.0 ±0.5
φ
21 ±0.8
φ
2 ±0.5
R1.0
4. PACKING; 1000 pieces/reel
SYMBOL RATINGS
A 10.7 ± 0.1
B 10.3 ± 0.1
D0 1.55 ± 0.1
D1 1.55 ± 0.1
E 1.75 ± 0.1
F 7.5 ± 0.1
P0 4.0 ± 0.1
P1 12.0 ± 0.1
P2 2.0 ± 0.1
T0 4.3 ± 0.2
T1 0.3
W 16 ± 0.3
Unit: mm
SYMBOL RATINGS
A 330
N 80 ± 5.0
W 16.4
Unit: mm
+2.0
–0
8
PS2503-1, -2, -4, PS2503L-1, -2, -4
5.1 MAX.
1.34
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
2.54 7.62
0.50 ± 0.10
0.25
M
0 to 15°
43
12
1. Anode
2. Cathode
3. Emitter
4. Collector
PS2503-1 PS2503-2
PS2503-4
10.2 MAX.
1.34
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
7.62
0.50 ± 0.10
0.25
M
0 to 15°
87
12
1,3. Anode
2,4. Cathode
5,7. Emitter
6,8. Collector
65
34
2.54
20.3 MAX.
1.34
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
7.62
0.50 ± 0.10 0.25
M
0 to 15°
16 15
12
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9,11,13,15. Emitter
10,12,14,16. Collector
14 13
34
12 11
56
10 9
78
2.54
PACKAGE DIMENSIONS (Unit: mm) Lead Bending type (Gull-wing)
PS2503L-1 PS2503L-2
PS2503L-4
5.1 MAX.
6.5
3.8
MAX.
1.34 ± 0.10 0.25
M
43
12
1. Anode
2. Cathode
3. Emitter
4. Collector
7.62
0.05 to 0.2
9.60 ± 0.4 0.9 ± 0.25
10.2 MAX.
6.5
3.8
MAX.
1.34 ± 0.10 0.25
M
87
12
1, 3. Anode
2, 4. Cathode
5, 7. Emitter
6, 8. Collector
7.62
0.05 to 0.2
9.60 ± 0.4 0.9 ± 0.25
65
34
20.3 MAX.
6.5
3.8
MAX.
1.34 ± 0.10 0.25
M
7.62
0.05 to 0.2
9.60 ± 0.4 0.9 ± 0.25
2.54
16 15
12
1, 3, 5, 7. Anode
2, 4, 6, 8. Cathode
9,11,13,15. Emitter
10,12,14,16. Collector
14 13
34
12 11
56
10 9
78
2.54 2.54
PACKAGE DIMENSIONS (Unit: mm) DIP (Dual In-line Package)
9
PS2503-1, -2, -4, PS2503L-1, -2, -4
[MEMO]
2
PS2503-1, -2, -4, PS2503L-1, -2, -4
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Galium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
