©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
KSC1008 Rev. B
KSC1008 NPN Epitacial Silicon Transistor
tm
September 2006
KSC1008
NPN Epitacial Silicon Transistor
Features
• Low frequency amplifier medium speed switching.
• High Collector-Base Voltage : VCBO=80V.
• Collector Current : IC=700mA
• Collector Power Dissipation : PC=800mW
• Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)
• Non suffix “-C” means Side Collector (1.Emitter 2.Base 3.Collector)
•Complement to KSA708
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics * Ta = 25°C unless otherwise noted
* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
hFE Classification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 8 V
ICCollector current 700 mA
PCCollector Power Dissipation 800 mW
TJJunction Temperature +150 °C
Tstg Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 80 V
BVCEO Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 8 V
ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 µA
IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 µA
hFE DC Current Gain VCE=2V, IC=50mA 40 400
VCE (sat) Collector-Emitter Saturation Voltage IC=500mA, IB=50mA 0.2 0.4 V
VBE (sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA 0.86 1.1 V
fTCurrent Gain Bandwidth Product VCE=10V, IC=50mA 30 50 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 8pF
Classification R O Y G
hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
KSC1008 : 1. Emitter 2. Base 3. Collector
KSC1008C : 1. Emitter 2. Collector 3. Base
TO-92
1 2 3
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KSC1008 Rev. B
KSC1008 NPN Epitacial Silicon Transistor
Package Marking and Ordering Information
Note : Affix “-C-” - ce nter collector pin.
Affix “-R-, -O-, -Y-, -G-” - hHE classification
Suffix “-BU” - Bulk packing, straight lead form.(see package dimensions)
Suffix “-TF” - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions)
SUffix “-TA” - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions)
Device(note) Device Marking Package Packing Method Qty(pcs) Pin Definitions
KSC1008COBU C1008OC TO-92 BULK -- 1.Emitter 2.Collector 3.Base
KSC1008COTA C1008OC TO-92 TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base
KSC1008CYBU C1008YC TO-92 BULK -- 1.Emitter 2.Collector 3.Base
KSC1008CYTA C1008YC TO-92 TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base
KSC1008GBU C1008G TO-92 BULK -- 1.Emitter 2.Base 3.Collector
KSC1008GTA C1008G TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector
KSC1008OBU C1008O TO-92 BULK -- 1.Emitter 2.Base 3.Collector
KSC1008OTA C1008O TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector
KSC1008RBU C1008R TO-92 BULK -- 1.Emitter 2.Base 3.Collector
KSC1008RTA C1008R TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector
KSC1008YBU C1008Y TO-92 BULK -- 1.Emitter 2.Base 3.Collector
KSC1008YTA C1008Y TO-92 TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector
KSC1008YTF C1008Y TO-92 TAPE & REEL 2,000 1.Emitter 2.Base 3.Collector
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KSC1008 Rev. B
KSC1008 NPN Epitacial Silicon Transistor
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance
0 5 10 15 20 25 30 35 40 45 50
0
20
40
60
80
100
120
140
160
180
200 IB = 1.8mA
IB = 1.6mA
IB = 1.4mA
IB = 1.2mA
IB = 1.0mA
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000
0
20
40
60
80
100
120
140
160
180
200
220
240
VCE = 2V
hFE, DC CURRENT GAIN
IC[mA], COLLE CTOR CURR E N T
1 10 100 1000
0.01
0.1
1
10
VBE(sat)
VCE(sat)
IC=10IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLE CTOR CURR E N T
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
VCE=2V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100
1
10
100 f=1MHz
IE=0
Cob[pF],CAPACTIANCE
VCB[V], COLLECTOR-BASE VOLTAGE
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KSC1008 Rev. B
KSC1008 NPN Epitacial Silicon Transistor
TO-92 Straight Lead Form
TO-92 0.200 In-Line Spacing Lead Form
Dimensions in Inches[Millimeters]
Package Dimensions
Dimensions in Millime
0.46
±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
±0.20
]1.27TYP
[1.27
±0.20
]
3.60
±0.20
14.47
±0.40
1.02
±0.10
(0.25) 4.58
±0.20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.38
+0.10
–0.05
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
KSC1008 NPN Epitacial Silicon Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFI CATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CO NDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEV ICES OR SYSTEMS W ITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant int o the body, or (b) support or sustain life , or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
to result in significant injury to the user.
2. A critical compone nt is any component of a life support device or system
whose failure to perform can be reasonably expected to cause the failu re
of the life support device or system, or t o affect it s safety or ef fectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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KSC1008 Rev. B
KSC1008 NPN Epitacial Silicon Transistor
