BC337 / BC338 Vishay Semiconductors Small Signal Transistors (NPN) Features C 1 * NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suited for AF-driver stages and low power output stages. * These types are also available subdivided into three groups - 16, - 25, and - 40, according to their DC current gain. As complementary types, the PNP transistors BC327 and BC328 are recommended. 2 B 1 2 3 E 3 18855_1 Mechanical Data Case: TO-92 Plastic case Weight: approx. 177 mg Packaging Codes/Options: BULK / 5 k per container 20 k/box TAP / 4 k per Ammopack 20 k/box Parts Table Part Type differentiation Ordering code Remarks BC337-16 hFE, 160 @ 100 mA BC337-16-BULK or BC337-16-TAP Bulk / Ammopack BC337-25 hFE, 250 @ 100 mA BC337-25-BULK or BC337-25-TAP Bulk / Ammopack BC337-40 hFE, 400 @ 100 mA BC337-40-BULK or BC337-40-TAP Bulk / Ammopack BC338-16 hFE, 130 @ 300 mA BC338-16-BULK or BC338-16-TAP Bulk / Ammopack BC338-25 hFE, 200 @ 300 mA BC338-25-BULK or BC338-25-TAP Bulk / Ammopack BC338-40 hFE, 320 @ 300 mA BC338-40-BULK or BC338-40-TAP Bulk / Ammopack Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Test condition Collector - emitter voltage Emitter - base voltage Part Symbol Value Unit BC337 VCES 50 V BC338 VCES 30 V BC337 VCEO 45 V BC338 VCEO 25 V VEBO 5 V mA Collector current Collector peak current Base current Power dissipation 1) Tamb = 25 C IC 800 ICM 1 A IB 100 mA Ptot 6251) mW Valid provided that leads are kept at ambient temperature at distance of 2 mm from case. Document Number 85112 Rev. 1.2, 02-Nov-04 www.vishay.com 1 BC337 / BC338 VISHAY Vishay Semiconductors Maximum Thermal Resistance Parameter Test condition Symbol Value Unit RJA 2001) C/W Thermal resistance junction to ambient air Junction temperature Tj 150 C Storage temperature range TS - 65 to + 150 C 1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case. Electrical DC Characteristics Part Symbol Min Typ Max DC current gain (current gain group - 16) Parameter VCE = 1 V, IC = 100 mA BC337-16 hFE 100 160 250 DC current gain (current gain group - 25) VCE = 1 V, IC = 100 mA BC337-25 hFE 160 250 400 DC current gain (current gain group - 40) VCE = 1 V, IC = 100 mA BC337-40 hFE 250 400 630 DC current gain (current gain group - 16) VCE = 1 V, IC = 300 mA BC338-16 hFE 60 130 DC current gain (current gain group - 25) VCE = 1 V, IC = 300 mA BC338-25 hFE 100 200 DC current gain (current gain group - 40) VCE = 1 V, IC = 300 mA BC338-40 hFE 170 320 Collector-emitter cut-off current VCE = 45 V BC337 ICES 2 100 nA VCE = 25 V BC338 ICES 2 100 nA VCE = 45 V, Tamb = 125 C BC337 ICES 10 A VCE = 25 V, Tamb = 125 C BC338 ICES 10 A IC = 10 mA BC337 V(BR)CEO 45 V BC338 V(BR)CEO 20 V IC = 0.1 mA BC337 V(BR)CES 50 V V(BR)CES 30 V V(BR)EBO 5 V Collector - emitter breakdown voltage Test condition BC338 Unit Emitter - base breakdown voltage IE = 0.1 mA Collector saturation voltage IC = 500 mA, IB = 50 mA VCEsat 0.7 V Base - emitter voltage VCE = 1 V, IC = 300 mA VBE 1.2 V Electrical AC Characteristics Parameter Test condition Symbol Min Typ Max Unit Gain - bandwidth product VCE = 5 V, IC = 10 mA, f = 50 MHz fT 100 MHz Collector - base capacitance VCB = 10 V, f = 1 MHz CCBO 12 pF www.vishay.com 2 Document Number 85112 Rev. 1.2, 02-Nov-04 BC337 / BC338 VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160180 200 Tamb - Ambient Temperature ( C ) 18845 Figure 1. Admissible Power Dissipation vs. Ambient Temperature I C - Collector Current ( mA ) 1000 100 150 C typical limits at Tamb = 25 C 1 0.1 0.4 IC 0.1 150 C 0 0.1 25 C - 50 C 1 10 100 I C - Collector Current ( mA ) 1000 Figure 4. Collector Saturation Voltage vs. Collector Current Tamb = 25 f = 20 MHz VCE = 5 V 1V 100 10 1 10 100 I C - Collector Current ( mA ) 18849 1000 Figure 5. Gain-Bandwidth Product vs. Collector Current 1000 10 3 h FE - DC Current Gain r thA - Pulse Thermal Resistance ( C / W) = 10 0.2 18848 VBE - Base-Emitter Voltage ( V ) Figure 2. Collector Current vs. Base-Emitter Voltage 18847 IB 0.3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 18846 typical limits at Tamb = 25 C 1000 25 C -50 C 10 VCEsat - Collector Saturation Voltage ( V ) 0.8 0.5 f T - Gain-Bandwidth Product ( MHz ) Ptot - Admissible Power Dissipation ( W ) 1 10 2 0.5 0.2 0.1 10 0.05 0.02 0.01 0.005 1 = 0 tp = tp /T Tamb = 25 C PI VCE = 1 V 10 10 10 2 Figure 3. Pulse Thermal Resistance vs. Pulse Duration Rev. 1.2, 02-Nov-04 - 50 C 100 T 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p - Pulse Length ( s ) Document Number 85112 150 C 0.1 18850 1 10 100 I C - Collector Current ( mA ) 1000 Figure 6. DC Current Gain vs. Collector Current www.vishay.com 3 BC337 / BC338 VISHAY Vishay Semiconductors 500 typical limits at Tamb = 25 C IC = 10 IB 1 I C - Collector Current ( mA ) VBEsat - Base Saturation Voltage ( V ) 2 - 50 C 25 C 150 C 0 0.1 1 10 100 I C - Collector Current ( mA ) 18851 1000 I C - Collector Current ( mA ) 100 0.35 80 0.3 0.85 400 300 0.8 200 0.75 100 VBE = 0.7 V 0 18854 Figure 7. Base Saturation Voltage vs. Collector Current 0.9 0 0.4 0.8 1.2 1.6 2 VCE - Collector Emitter Voltage ( V ) Figure 10. Collector Current vs. Collector Emitter Voltage 0.25 60 0.2 0.15 40 0.1 20 0 I B = 0.05 mA 0 2 4 6 8 10 12 14 16 18 20 VCE - Collector Emitter Voltage ( V ) 18852 Figure 8. Collector Current vs. Collector Emitter Voltage I C - Collector Current ( mA ) 500 3.2 2.8 400 1.8 1.6 1.4 1.2 1 0.8 0.6 300 200 0.4 100 0 2.4 2 I B = 0.2 mA 0 18853 0.4 0.8 1.2 1.6 2 VCE - Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage www.vishay.com 4 Document Number 85112 Rev. 1.2, 02-Nov-04 BC337 / BC338 VISHAY Vishay Semiconductors Packaging for Radial Taping Dimensions in mm 2 12.7 1 "H" 0.5 9 12 0.3 18 1 -0.5 0.3 0.2 1 Vers. Dim. "H" FSZ 5.08 0.7 4 0.2 2.54 27 0.5 0.9 max + 0.6 - 0.1 6.3 0.7 12.7 0.2 Measure limit over 20 index - holes: 1 18787 Document Number 85112 Rev. 1.2, 02-Nov-04 www.vishay.com 5 BC337 / BC338 VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 3.6 (0.142) min. 12.5 (0.492) 4.6 (0.181) 4.6 (0.181) max. 0.55 (0.022) 2.5 (0.098) Bottom View www.vishay.com 6 18776 Document Number 85112 Rev. 1.2, 02-Nov-04 BC337 / BC338 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85112 Rev. 1.2, 02-Nov-04 www.vishay.com 7