BC337 / BC338
Document Number 85112
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
1
18855_1
123
2
1
3E
B
C
Small Signal Transistors (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors for
switching and amplifier applications. Especially
suited for AF-driver stages and low power output
stages.
• These types are also available subdivided into
three groups - 16, - 25, and - 40, according to their
DC current gain. As complementary types, the
PNP transistors BC327 and BC328 are recom-
mended.
Mechanical Data
Case: TO-92 Plastic case
Weight: approx. 177 mg
Packaging Codes/Options:
BULK / 5 k per container 20 k/box
TAP / 4 k per Ammopack 20 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Part Type differentiation Ordering code Remarks
BC337-16 hFE, 160 @ 100 mA BC337-16-BULK or BC337-16-TAP Bulk / Ammopack
BC337-25 hFE, 250 @ 100 mA BC337-25-BULK or BC337-25-TAP Bulk / Ammopack
BC337-40 hFE, 400 @ 100 mA BC337-40-BULK or BC337-40-TAP Bulk / Ammopack
BC338-16 hFE, 130 @ 300 mA BC338-16-BULK or BC338-16-TAP Bulk / Ammopack
BC338-25 hFE, 200 @ 300 mA BC338-25-BULK or BC338-25-TAP Bulk / Ammopack
BC338-40 hFE, 320 @ 300 mA BC338-40-BULK or BC338-40-TAP Bulk / Ammopack
Parameter Test condition Part Symbol Value Unit
Collector - emitter voltage BC337 VCES 50 V
BC338 VCES 30 V
BC337 VCEO 45 V
BC338 VCEO 25 V
Emitter - base voltage VEBO 5V
Collector current IC800 mA
Collector peak current ICM 1A
Base current IB100 mA
Power dissipation Tamb = 25 ° C Ptot 6251) mW
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2
Document Number 85112
Rev. 1.2, 02-Nov-04
VISHAY
BC337 / BC338
Vishay Semiconductors
Maximum Thermal Resistance
1) Valid provided that leads are kept at ambient temperature at distance of 2 mm from case.
Electrical DC Characteristics
Electrical AC Characteristics
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air
RθJA 2001) °C/W
Junction temperature Tj150 °C
Storage temperature range TS- 65 to + 150 °C
Parameter Test condition Part Symbol Min Typ Max Unit
DC current gain
(current gain group - 16)
VCE = 1 V, IC = 100 mA BC337-16 hFE 100 160 250
DC current gain
(current gain group - 25)
VCE = 1 V, IC = 100 mA BC337-25 hFE 160 250 400
DC current gain
(current gain group - 40)
VCE = 1 V, IC = 100 mA BC337-40 hFE 250 400 630
DC current gain
(current gain group - 16)
VCE = 1 V, IC = 300 mA BC338-16 hFE 60 130
DC current gain
(current gain group - 25)
VCE = 1 V, IC = 300 mA BC338-25 hFE 100 200
DC current gain
(current gain group - 40)
VCE = 1 V, IC = 300 mA BC338-40 hFE 170 320
Collector-emitter cut-off current VCE = 45 V BC337 ICES 2 100 nA
VCE = 25 V BC338 ICES 2 100 nA
VCE = 45 V, Tamb = 125 °C BC337 ICES 10 µA
VCE = 25 V, Tamb = 125 °C BC338 ICES 10 µA
Collector - emitter breakdown
voltage
IC = 10 mA BC337 V(BR)CEO 45 V
BC338 V(BR)CEO 20 V
IC = 0.1 mA BC337 V(BR)CES 50 V
BC338 V(BR)CES 30 V
Emitter - base breakdown
voltage
IE = 0.1 mA V(BR)EBO 5V
Collector saturation voltage IC = 500 mA, IB = 50 mA VCEsat 0.7 V
Base - emitter voltage VCE = 1 V, IC = 300 mA VBE 1.2 V
Parameter Test condition Symbol Min Ty p Max Unit
Gain - bandwidth product VCE = 5 V, IC = 10 mA,
f = 50 MHz
fT100 MHz
Collector - base capacitance VCB = 10 V, f = 1 MHz CCBO 12 pF
VISHAY
BC337 / BC338
Document Number 85112
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Admissible Power Dissipation vs. Ambient Temperature
Figure 2. Collector Current vs. Base-Emitter Voltage
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
200
18845
T
amb
- Ambient Temperature ( °C)
1
0.8
0.6
0.4
0.2
20 40 60 80 100 120 140 1601800
0
P - Admissible Power Dissipation(W)
tot
I - Collector Current ( mA )
C
18846
V
BE
- Base-Emitter Voltage(V)
1
0.1
10
100
1000
0.20 1 1.2 1.4 1.60.4 0.6 0.8 1.8 2
25°C
-50°C
150°C
typical
limits
at T
amb
=25
°C
t
p
- Pulse Length ( s )
10
-6
10
-5
10
-4
10
-3
10
-2
10
2
10 10
-1
1
18847
r - Pulse Thermal Resistance (
thA
10
3
10
1
10
-1
10
2
ν/T=t
p
P
I
T
t
p
0.5
0.2
0.1
0.05
0.02
0.01
ν=0
0.005
°C/W)
Figure 4. Collector Saturation Voltage vs. Collector Current
Figure 5. Gain-Bandwidth Product vs. Collector Current
Figure 6. DC Current Gain vs. Collector Current
typical
limits
at T
amb
=25
°C
I
B
I=10
C
150°C25°C
-50
°C
0
0.1
0.2
0.3
0.4
0.5
18848
I
C
- Collector Current ( mA )
0.1 1 10 100 1000
V - Collector Saturation Voltage(V)
CEsat
10
100
1000
1 10 100 1000
f - Gain-Bandwidth Product ( MHz )
T
I - Collector Current ( mA )
C
18849
amb =25°T
f=20MHz
CE =5VV
1V
18850
10
100
1000
10.1 10 100 1000
h - DC Current Gain
FE
I - Collector Current ( mA )
C
VCE =1V
Tamb =25°C
-50°C
150°C
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4
Document Number 85112
Rev. 1.2, 02-Nov-04
VISHAY
BC337 / BC338
Vishay Semiconductors
Figure 7. Base Saturation Voltage vs. Collector Current
Figure 8. Collector Current vs. Collector Emitter Voltage
Figure 9. Collector Current vs. Collector Emitter Voltage
typical
limits
at T
amb
=25
°C
I
B
I=10
C
150°C
25°C
-50
°C
0
1
2
18851
I
C
- Collector Current ( mA )
0.1 1 10 100 1000
V - Base Saturation Voltage ( V )
BEsat
I - Collector Current ( mA )
C
0 2 4 6 8 101214161820
18852
VCE - Collector Emitter Voltage(V)
0
20
40
60
80
100
IB= 0.05 mA
0.1
0.15
0.2
0.25
0.3
0.35
I - Collector Current ( mA )
C
0 0.4 0.8 1.2 1.6 2
18853
VCE - Collector Emitter Voltage(V)
100
0
200
300
400
500
IB= 0.2 mA
0.4
0.6
0.8
2.4
1.2
1.4
1.8
1
1.6
2
2.8
3.2
Figure 10. Collector Current vs. Collector Emitter Voltage
I - Collector Current ( mA )
C
0 0.4 0.8 1.2 1.6 2
18854
VCE - Collector Emitter Voltage(V)
100
200
300
400
500
0
VBE = 0.7 V
0.75
0.8
0.9 0.85
VISHAY
BC337 / BC338
Document Number 85112
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
5
Packaging for Radial Taping
Dimensions in mm
±1 12.7
±1
0.3
± 0.2
±1
-0.5
18
12 ±
0.3
9
± 0.5
4
± 0.2
12.7
± 0.2
6.3
± 0.7
5.08
± 0.7
2.54
+ 0.6
- 0.1
Measure limit over 20 index - holes: ± 1
"H"
Vers. Dim. "H"
FSZ 27 ± 0.5
0.9 max
±2
18787
www.vishay.com
6
Document Number 85112
Rev. 1.2, 02-Nov-04
VISHAY
BC337 / BC338
Vishay Semiconductors
Package Dimensions in mm (Inches)
Bottom
View
4.6 (0.181) 3.6 (0.142)
min. 12.5 (0.492) 4.6 (0.181)
max. 0.55 (0.022)
2.5 (0.098)
18776
VISHAY
BC337 / BC338
Document Number 85112
Rev. 1.2, 02-Nov-04
Vishay Semiconductors
www.vishay.com
7
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
