PD - 97262A IRF6641TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l l RoHS Compliant Lead-Free (Qualified up to 260C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques VDSS VGS RDS(on) 200V max 20V max Qg Qgd Vgs(th) 9.5nC 4.0V tot 34nC 51m@ 10V DirectFET ISOMETRIC MZ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) MZ SH SJ SP MN Description The IRF6641PbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g e e f h Units 200 20 4.6 3.7 26 37 46 11 V A mJ A 12.0 200 I D = 5.5A , Gate-to-Source Voltage (V) GS I D = 5.5A 180 160 140 120 T J = 125C 100 80 T J = 25C 60 40 V , Drain-to -Source On Resistance (m ) R DS(on) VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR Max. 10.0 V DS = 160V V DS = 100V V DS = 40V 8.0 6.0 4.0 2.0 20 0.0 0 4 6 V GS, 8 10 12 14 16 Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com 0 5 10 Q G, 15 20 25 30 35 40 Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.77mH, RG = 25, IAS = 11A. 1 11/14/07 IRF6641TRPbF Electrical Characteristic @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Parameter 200 --- --- 0.23 --- --- V V/C VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage --- 3.0 51 4.0 59.9 4.9 m V VGS(th)/TJ IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current --- --- -11 --- --- 20 IGSS Gate-to-Source Forward Leakage --- --- --- --- 250 100 Gate-to-Source Reverse Leakage Forward Transconductance --- 13 --- --- -100 --- Total Gate Charge Pre-Vth Gate-to-Source Charge --- --- 34 8.7 48 --- Post-Vth Gate-to-Source Charge Gate-to-Drain Charge --- --- 1.9 9.5 --- 14 Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- 14 11 --- --- Output Charge Gate Resistance --- --- 12 1.0 --- --- Turn-On Delay Time Rise Time --- --- 16 11 --- --- Turn-Off Delay Time Fall Time --- --- 31 6.5 --- --- Input Capacitance Output Capacitance --- --- 2290 240 --- --- Reverse Transfer Capacitance Output Capacitance --- --- 46 1780 --- --- Output Capacitance --- 100 --- BVDSS VDSS/TJ RDS(on) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Coss Coss Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 5.5A i VDS = VGS, ID = 150A mV/C A VDS = 200V, VGS = 0V VDS = 160V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V S VDS = 10V, ID = 5.5A nC VDS = 100V VGS = 10V ID = 5.5A See Fig. 15 nC VDS = 16V, VGS = 0V VDD = 100V, VGS = 10V ID = 5.5A ns RG = 6.2 pF VDS = 25V i VGS = 0V = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 160V, f=1.0MHz Diode Characteristics Min. Typ. Max. IS Continuous Source Current Parameter --- --- 26 ISM (Body Diode) Pulsed Source Current --- --- 37 VSD trr Qrr g Units Conditions MOSFET symbol A showing the integral reverse D G S (Body Diode) Diode Forward Voltage --- --- 1.3 V Reverse Recovery Time Reverse Recovery Charge --- --- 85 320 130 480 ns nC p-n junction diode. TJ = 25C, IS = 5.5A, VGS = 0V TJ = 25C, IF = 5.5A, VDD = 100V i di/dt = 100A/s c Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF6641TRPbF Absolute Maximum Ratings e e f Max. Units 2.8 1.8 89 270 -40 to + 150 W Parameter Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG C Thermal Resistance Parameter el jl kl fl RJA RJA RJA RJC RJ-PCB Typ. Max. Units --- 12.5 20 --- 1.0 45 --- --- 1.4 --- C/W Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted 100 Thermal Response ( Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 J 0.1 R1 R1 J 1 R2 R2 R3 R3 1 2 2 3 3 0.001 0.01 0.001268 17.299 0.033387 17.566 0.508924 11.19309 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 A 4 0.6784 9.4701 0.01 1E-005 4 i (sec) Ri (C/W) A Ci= i/Ri Ci= i/Ri 0.001 1E-006 R4 R4 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Mounted on minimum footprint full size board with metalized Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink. R is measured at TJ of approximately 90C. Used double sided cooling, mounting pad with large heatsink. Surface mounted on 1 in. square Cu board (still air). www.irf.com Mounted on minimum footprint full size board with metalized back and with small clip heatsink. (still air) 3 IRF6641TRPbF 100 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 7.0V 10 BOTTOM VGS 15V 10V 8.0V 7.0V 10 7.0V 1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 0.1 1 0.1 1 0.1 10 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Output Characteristics 2.5 Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A) 10 T J = 150C T J = 25C T J = -40C 1 VDS = 10V 60s PULSE WIDTH ID = 5.5A VGS = 10V 2.0 1.5 1.0 0.5 0.1 2 4 6 8 10 12 14 16 -60 -40 -20 0 VGS, Gate-to-Source Voltage (V) 100000 Fig 7. Normalized On-Resistance vs. Temperature 100 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED TJ = 25C C rss = C gd 90 Typical RDS(on) ( m) C oss = C ds + C gd 10000 Ciss 1000 Coss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 6. Typical Transfer Characteristics C, Capacitance (pF) 10 Fig 4. Typical Output Characteristics 100 Crss 80 Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V 70 60 50 10 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 1 V DS, Drain-to-Source Voltage (V) 0 10 20 30 40 50 60 ID, Drain Current (A) Fig 9. Typical On-Resistance vs. Drain Current www.irf.com IRF6641TRPbF 1000 T J = 150C ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100 T J = 25C T J = -40C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1 10 1 100sec 10msec 0.1 Tc = 25C Tj = 150C Single Pulse VGS = 0V 0 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 VSD, Source-to-Drain Voltage (V) 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area Fig 10. Typical Source-Drain Diode Forward Voltage 6.0 Typical VGS(th), Gate threshold Voltage (V) 5 4 ID, Drain Current (A) 1msec 3 2 1 5.0 4.0 ID = 150A ID = 250A 3.0 ID = 1.0mA ID = 1.0A 2.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( C ) TA , Ambient Temperature (C) Fig 13. Typical Threshold Voltage vs. Junction Temperature Fig 12. Maximum Drain Current vs. Ambient Temperature EAS , Single Pulse Avalanche Energy (mJ) 200 ID 180 TOP 3.7A 5.7A BOTTOM 11A 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6641TRPbF Current Regulator Same Type as D.U.T. Id Vds 50K Vgs .2F 12V .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 14a. Gate Charge Test Circuit Fig 14b. Gate Charge Waveform V(BR)DSS 15V DRIVER L VDS D.U.T RG V20V GS tp + - VDD IAS A I AS 0.01 tp Fig 15a. Unclamped Inductive Test Circuit VDS VGS RD VDS 90% D.U.T. RG + - 10V Pulse Width 1 s Duty Factor 0.1 % Fig 16a. Switching Time Test Circuit 6 Fig 15b. Unclamped Inductive Waveforms VDD 10% VGS td(on) tr td(off) tf Fig 16b. Switching Time Waveforms www.irf.com IRF6641TRPbF Driver Gate Drive D.U.T + RG * * * * * D.U.T. ISD Waveform Reverse Recovery Current V DD ** P.W. Period *** + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel VDD ISD *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. www.irf.com 7 IRF6641TRPbF DirectFET Outline Dimension, MZ Outline (Medium Size Can, Z-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS METRIC CODE A B C D E F G H J K L M R P MIN 6.25 4.80 3.85 0.35 0.68 0.68 0.93 0.63 0.28 1.13 2.53 0.616 0.020 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 0.97 0.67 0.32 1.26 2.66 0.676 0.080 0.17 IMPERIAL MAX 0.246 0.189 0.152 0.014 0.027 0.027 0.037 0.025 0.011 0.044 0.100 0.0235 0.0008 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.038 0.026 0.013 0.050 0.105 0.0274 0.0031 0.007 DirectFET Part Marking 8 www.irf.com IRF6641TRPbF DirectFET Tape & Reel Dimension (Showing component orientation). LOADED TAPE FEED DIRECTION CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MIN MAX MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 1.50 N.C N.C 0.059 1.50 1.60 0.063 NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6641TRPBF). For 1000 parts on 7" reel, order IRF6641TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION METRIC IMPERIAL METRIC CODE MIN MIN MAX MAX MIN MAX A 12.992 330.0 N.C 177.77 N.C N.C B 0.795 20.2 19.06 N.C N.C N.C C 0.504 12.8 13.5 0.520 13.2 12.8 D 0.059 1.5 1.5 N.C N.C N.C E 3.937 100.0 58.72 N.C N.C N.C F N.C N.C N.C 0.724 18.4 13.50 G 0.488 12.4 11.9 14.4 12.01 0.567 H 0.469 11.9 11.9 0.606 15.4 12.01 (QTY 1000) IMPERIAL MIN MAX 6.9 N.C 0.75 N.C 0.53 0.50 0.059 N.C 2.31 N.C N.C 0.53 0.47 N.C 0.47 N.C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2007 www.irf.com 9