050-7608 Rev B 11-2005
APT150GN120J
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 6mA)
Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
Integrated Gate Resistor
Symbol
V(BR)CES
VGE(TH)
VCE(ON)
ICES
IGES
RG(int)
Units
Volts
µA
nA
Ω
Symbol
VCES
VGE
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT150GN120J
1200
±30
215
99
450
450A @ 1200V
625
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT Website - http://www.advancedpower.com
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN TYP MAX
1200
5.0 5.8 6.5
1.4 1.7 2.1
2.08
100
TBD
600
5
®
G
C
E
1200V
APT150GN120J
SOT-227
ISOTOP
®
file # E145592
"UL Recognized"
GE
E
C
050-7608 Rev B 11-2005
APT150GN120J
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 600V
IC = 150A
TJ = 150°C, RG = 4.3Ω 7, VGE =
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
VCC = 800V
VGE = 15V
IC = 150A
RG = 1.0Ω 7
TJ = +25°C
Inductive Switching (125°C)
VCC = 800V
VGE = 15V
IC = 150A
RG = 1.0Ω 7
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
MIN TYP MAX
9500
500
400
9.5
800
70
430
450
55
65
675
85
22
27
15
55
65
780
175
23
35
22
UNIT
pF
V
nC
A
ns
mJ
ns
mJ
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
Volts
oz
gm
Ib•in
N•m
MIN TYP MAX
0.20
N/A
2500
1.03
29.2
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Terminal & Mounting Torque
Symbol
RθJC
RθJC
VIsolation
WT
Torque
050-7608 Rev B 11-2005
APT150GN120J
TYPICAL PERFORMANCE CURVES
VGS(TH), THRESHOLD VOLTAGE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
(NORMALIZED)
IC, DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
300
250
200
150
100
50
0
300
250
200
150
100
50
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30
0 2 4 6 8 10 12 0 200 400 600 800 1000
8 10 12 14 16 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
400
350
300
250
200
150
100
50
0
16
14
12
10
8
6
4
2
0
3.5
3
2.5
2
1.5
1
0.5
0
300
250
200
150
100
50
0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
6.5, 10 &15V
5V
4.5V
4V
6V
TJ = 125°C
TJ = 25°C
TJ = -55°C
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
TJ = 125°C
TJ = 25°C
TJ = -55°C
TJ = 175°C
VGE = 15V
5.5V
VCE = 600V
VCE = 240V
IC = 150A
TJ = 25°C
V
CE
= 960V
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 300A
I
C
= 150A
I
C
= 75A
I
C
= 300A
I
C
= 150A
I
C
= 75A
050-7608 Rev B 11-2005
APT150GN120J
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 800V
RG = 1.0Ω
L = 100µH
SWITCHING ENERGY LOSSES (µJ) EON2, TURN ON ENERGY LOSS (µJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
SWITCHING ENERGY LOSSES (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 800V
TJ = 25°C, or 125°C
RG = 1.0Ω
L = 100µH
60
50
40
30
20
10
0
400
350
300
250
200
150
100
50
0
120,000
100,000
80,000
60,000
40,000
20,000
0
200,000
160,000
120,000
80,000
40,000
0
1000
800
600
400
200
0
250
200
150
100
50
0
50,000
40,000
30,000
20,000
10,000
0
120,000
100,000
80,000
60,000
40,000
20,000
0
VGE = 15V
TJ = 125°C, VGE = 15V
TJ = 25°C, VGE = 15V
VCE = 800V
VGE = +15V
RG = 1.0Ω
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350
0 5 10 15 20 0 25 50 75 100 125
RG = 1.0Ω, L = 100µH, VCE = 800V
RG = 1.0Ω, L = 100µH, VCE = 800V
TJ = 25 or 125°C,VGE = 15V
VCE = 800V
VGE = +15V
RG = 1.0Ω
TJ = 125°C
TJ = 25°C
VCE = 800V
VGE = +15V
RG = 1.0Ω
TJ = 125°C
TJ = 25°C
Eon2,300A
Eoff,300A Eon2,150A
Eoff,150A
Eon2,75A
Eoff,75A
VCE = 800V
VGE = +15V
TJ = 125°C
Eon2,300A
Eoff,300A
Eon2,150A
Eoff,150A Eon2,75A
Eoff,75A
050-7608 Rev B 11-2005
APT150GN120J
TYPICAL PERFORMANCE CURVES
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
ZθJC, THERMAL IMPEDANCE (°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5 10-4 10-3 10-2 10-1 1.0
20,000
10,000
500
100
50
10
500
450
400
350
300
250
200
150
100
50
0
C, CAPACITANCE (PF)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area
0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 70 120 170 220 270
FMAX, OPERATING FREQUENCY (kHz)
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 800V
RG = 1.0Ω
30
10
5
1
0.5
0.1
0.05
Fmax = min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
Pdiss - Pcond
Eon2 + Eoff
fmax2 =
Pdiss = TJ - TC
RθJC
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
Cres
Coes
Cies
0.0457
0.133
0.0221
0.025
0.569
30.8
Power
(watts)
Junction
temp. (°C)
RC MODEL
Case temperature. (°C)
050-7608 Rev B 11-2005
APT150GN120J
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
TJ = 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
td(on)
90%
10%
tr
5%
TJ = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
td(off)
10%
tf
90%
APT100DQ120
SOT-227 (ISOTOP
®)
Package Outline
ISOTOP ® is a Registered Trademark of SGS Thomson.
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Emitter Collector
Gate
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Emitter
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
I
C
A
D.U.T.
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
