Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Apr. 2009 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
1
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR10100C is available in standard TO-220F-3,
TO-220-3 and TO-220-3 (2) packages.
Features
High Surge Capacity
• 150°C Operating Junction Temperature
10A Total (5A Per Diode Leg)
Guard-Ring foe Stress Protection
Pb- Free Packages are available
Main Product Characteristics
IF(AV) 2*5A
VRRM 100V
TJ 150°C
VF(max) 0.75V
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94 V-0@ 0.125 in
• Weight (Approximately):
1.9 Grams (TO-220-3, TO-220-3(2) and
TO-220F-3)
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Applications
• Power Supply Output Rectification
• Power Management
• Instrumentation
Figure 1. Package Type of MBR10100C
TO-220F-3 TO-220-3 TO-220-3 (2)
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Apr. 2009 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
2
Pin Configuration
T Package
(TO-220-3) (TO-220-3 (2))
TF Package
(TO-220F-3)
Figure 2. Pin Configuration of MBR10100 C (Top View)
Figure 3. Internal Structure of MBR10100C
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Apr. 2009 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
3
Ordering Information
MBR10100C -
Circuit Type E1: Lead Free
G1: Green
Package
T: TO-220-3/TO-220-3 (2) Blank: Tube
TF: TO-220F-3
Part Number Marking ID
Package Lead Free Green Lead Free Green Packing
Type
TO-220-3/
TO-220-3 (2) MBR10100CT-E1 MBR10100CT-
G1 MBR10100CT-E1 MBR10100CT-
G1 Tube
TO-220F-3 MBR10100CTF-E
1
MBR10100CTF
-G1 MBR10100CTF-E1 MBR10100CTF
-G1 Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ <
1/θJA.
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current
(Rated VR) TC = 138°C IF(AV) 5 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 138°C IFRM 10 A
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase, 60Hz) IFSM 100 A
Operating Junction Temperature RangeNote 2 TJ 150
°C
Storage Temperature Range TSTG -55 to 150
°C
Voltage Rate of Change (Rated VR) dv/dt 10000
V/µs
ESD Ratings: Machine Model = C
Human Body Model =3B > 400
> 8000 V
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Apr. 2009 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
4
Recommended Operating Conditions
Parameter Symbol Condition Value Unit
TO-220-3/
TO-220-3 (2) 3.0
θJC Junction to Case
TO-220F-3 4.5
TO-220-3/
TO-220-3 (2) 60
Maximum Thermal Resistance
θJA Junction to
Ambient TO-220F-3 60
°C/W
Electrical Characteristics
Parameter Symbol Conditions Value
Units
IF=5A, TC=25°C 0.85
IF=5A, TC=125°C 0.75
IF=10 A, TC=25°C 0.95
Maximum Instantaneous Forward
Voltage Drop (Note 3)
VF
IF=10A, TC=125°C 0.85
V
Rated DC Voltage,
TC=125°C 6.0
Maximum Instantaneous Reverse
Current (Note 3)
IR
Rated DC Voltage,
TC=25°C 0.1
mA
Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Apr. 2009 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
5
Typical Performance Characteristics
Figure 4. Typical Forward Voltage Per Dio de Figure 5. Typical Reverse Current Per Diode
Figure6. Average Forward Current vs.
Case Temperature (Per Diode )
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.01
0.1
1
10
100
TJ=1500C
TJ=1250C
Instantaneous Forward Current(A)
Instantaneous Forward Voltage(V)
TJ=25C
0 20406080100
1E-3
0.01
0.1
1
10
100
1000
10000
TJ=1500C
TJ=1250C
Insta nt a ne ou s Reve rs e Cu rr en t ( µA)
Percent of Ra t e d P eak Re ver s e Volt a g e( % )
TJ=250C
0
1
2
3
4
5
6
7
8
9
10
100 105 110 115 120 125 130 135 140 145 150 155
Case Temperature (°C)
Average Forward Current (AMPS)
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Apr. 2009 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
6
Mechanical Dimensions
TO-220-3 Unit: mm(inch)
φ3.560(0.140)
1.160(0.046)
0.813(0.032)
8.763(0.345)
2.540(0.100) 0.356(0.014)
2.080(0.082)
3°
7°
3.560(0.140)
7°
9.660(0.380)
0.550(0.022)
60°
0.381(0.015)
2.580(0.102)
60°
φ1.500(0.059)
0.200(0.008)
2.540(0.100)
0.381(0.015)
0.406(0.016)
3.380(0.133)
10.660(0.420)
4.060(0.160) 1.350(0.053)
4.820(0.190)
2.880(0.113)
1.760(0.069)
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Apr. 2009 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
7
Mechanical Dimensions (Continued)
TO-220-3(2) Unit: mm(inch)
3°
3°
1.300(0.051)
3°
9.800(0.386)
10.200(0.402)
3.560(0.140)
3.640(0.143)
0.700(0.028)
0.900(0.035)
1.270(0.050)
2.540(0.100) 2.540(0.100)
1.300(0.051)
0.600(0.024)
1.700(0.067)
4.500(0.177)
2.400(0.094)
0.400(0.016)
0.600(0.024)
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR10100C
Apr. 2009 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
8
Mechanical Dimensions (Continued)
TO-220F-3 Unit: mm(inch)
4.300(0.169)
0.450(0.018)
0.600(0.024)
2.540(0.100)
9.700(0.382)
10.300(0.406)
6.900(0.272)
7.100(0.280)
3.000(0.119)
3.400(0.134)
14.700(0.579)
16.000(0.630)
1.000(0.039)
1.400(0.055)
1.100(0.043)
1.500(0.059)
2.790(0.110)
4.500(0.177)
12.500(0.492)
13.500(0.531)
0.550(0.022)
0.900(0.035)
2.540(0.100)
3.000(0.119)
3.550(0.140)
3.370(0.133)
3.900(0.154)
2.350(0.093)
2.900(0.114)
4.900(0.075)
IMPOR TANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
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Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277