ZHCS2000
1
ISSUE 2 - DECEMBER 2002
40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
SUMMARY
VR=40V; IC= 2A
DESCRIPTION
A surface mount Schottky Barrier Diode featuring low forward voltage drop
suitable for high frequency rectification and reverse voltage protection.
FEATURES
•High current capability
•Low forward voltage (VFmax=0.5V)
•Fast recovery time
•Small package size
APPLICATIONS
•Mobile telecomms, PCMIA & SCSI
•DC-DC Conversion
•High frequency rectification
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH
(mm) QUANTITY
PER REEL
ZHCS2000TA 78mm embossed 3000 units
ZHCS2000TC 13 8mm embossed 10000 units
DEVICE MARKING
ZS20
Top View
SOT23-6
A
C
C
A
C
C
C
A
ISSUE 2 - DECEMBER 2002
ZHCS2000
2
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 113 °C/W
Junction to Ambient (b) RθJA 73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR40 V
Forward Current IF2A
Average Peak Forward Current;D.C.=50% IFAV 4A
Non Repetitive Forward Current t≤100µs
t≤10ms IFSM 20
10 A
A
Power Dissipation at Tamb=25°C Ptot 1.1 W
Storage Temperature Range Tstg -55 to +150 °C
Junction Temperature Tj125 °C
3
Dut
y
C
y
cle
t1
t2
D = t1 / t2
Reverse Recovery Time Circuit
To 50R
Scope
1nS
Rise Time
50R to 12R5
Pulse Transformer
12R5
12R5
Negative Input Pulse
1nS Rise Time
DUT
+V
ISSUE 2 - DECEMBER 2002
ZHCS2000
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2002
ZHCS2000
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage V(BR)R 40 V IR=1mA
Forward Voltage VF290
340
380
420
485
420
325
385
445
500
615
mV
mV
mV
mV
mV
mV
IF=500mA*
IF=1000mA*
IF=1500mA*
IF=2000mA*
IF=3000mA*
IF=2000mA*,Tamb=100°C*
Reverse Current IR160 300 µAVR=30V
Diode Capacitance CD50 pF f=1MHz,VR=25V
Reverse Recovery
Time trr 5.5 ns switched from
IF= 500mA to IR= 500mA
Measured at IR= 50mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
ISSUE 2 - DECEMBER 2002
ZHCS2000
5
TYPICAL CHARACTERISTICS
ISSUE 2 - DECEMBER 2002
ZHCS2000
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ISSUE 2 - DECEMBER 2002
ZHCS2000
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ISSUE 2 - DECEMBER 2002
ZHCS2000
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PACKAGE DIMENSIONS PAD LAYOUT DETAILS
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3701-04 Metroplaza, Tower 1 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong © Zetex plc 2000
Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49 Fax: (631) 864-7630 Fax: (852) 24250 494 www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
A1
2
L
DATUM A
a
C
E
AA2
E1
D
be
e1
DIM Millimetres Inches
Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
e 0.95 REF 0.037 REF
e1 1.90 REF 0.074 REF
