a FAIRCHILD June 1995 _ SEMICONDUCTOR wu BSS84/ BSS110 P-Channel Enhancement Mode Field Effect Transistor OLLSSa/rsssa General Description Features These P-Channel enhancement mode power field effect gsspq4- -0.13A, -50V. Rosin = 1022 @ Veg = -10V. transistors are produced using Fairchild's proprietary, high cell . _ _ density, DMOS technology. This very high density process is BSS110: -0.17A, -5OV. Rosioy) = 1082 @ Ves = -10V designed to minimize on-state resistance, provide rugged and = Voltage controlled p-channel small signal switch. reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.17A DC and can deliver pulsed currents up to 0.68A. This High saturation current. product is particularly suited to low voltage applications requiring a low current high side switch. = High density cell design for low Rysiony - G D* % TO-92 (97) SOT-23 Absolute Maximum Ratings T, = 25C unless otherwise noted Symbol |Parameter BSS84 BSS110 Units Voss Drain-Source Voltage -50 V Voce _ |Drain-Gate Voltage (R,, < 20 KQ} -50 Vv Voss \Gate-Source Voltage - Continuous 20 V ly Drain Current - Continuous @ T, = 30/35C 0.13 0.17 A -Pulsed @T,=25C 0.52 0.68 P, Maximum Power Dissipation 1, = 25C 0.36 0.63 W T,,T sz (Operating and Storage Temperature Range -55 to 150 c T, Maximum lead temperature for soldering purposes, 300 Cc 1/16" from case for 10 seconds THERMAL CHARACTERISTICS Raia [Thermal Resistance, Junction-to-Ambient 350 200 CW 5-1 1 9 BSS&4 Rev. B1 / BSS110. Rev. AtoS ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) o Symboi | Parameter Conditions | Type | Min | Typ | Max | Units GU) | OFF CHARACTERISTICS oo BV oss Drain-Source Breakdown Voltage Vog = 0 V, | =-250 pA All -50 Vv D loss Zero Gate Voltage Drain Current Vos = -50 V, All 15 HA 0 Vos= OV T= 125C 60 | pA a Vag = -25 V, Veg= 0 V O1} pA losge Gate - Body Leakage, Reverse Vog = -20 V, Vag= OV All -10 nA ON CHARACTERISTICS (note 1) Vestn Gate Threshold Voltage Vos = Veg Ip 2-1 mA All O08 | -1.75) 2 Vv Rosiow Static Drain-Source On-Resistance Vos =-10V, |, =-0.13A BSS84 23 | 10 Q Veg =-10V, 1, = O17A BSS110 22 10 Ors Forward Transconductance Vos = -10V, |, =-0.13A BSS84 | 0.05 | 0.27 $s Vos = -10V, |, =-0.17A BSS110 | 0.05 | 0.29 DYNAMIC CHARACTERISTICS C.., Input Capacitance Vog = -25.V, Veg = OV, BSSe4 37 45 | pF f = 1.0 MHz BSS110 37 40 C..5 Output Capacitance All 16 25 pF Ch. Reverse Transfer Capacitance All 5 12 pF SWITCHING CHARACTERISTICS (note 1) tony Tum - On Delay Time Vop =-30V, I, = 0.27 A, All 12 ns i Tum - On Rise Time Vos = ~10V, Rog, = 50 2 All 50 | nS tom Tum - Off Delay Time All 10 ns t Turn - Off Fall Time All 25 ns DRAIN-SOURCE DIODE CHARACTERISTICS I, Continuous Source Diode Current BSS84 0.13 A BSS110 0.17 | os | legs Maximum Pulsed Source Diode Current (nove 1) BSS84 0.52 A BSS110 0.68 Vsp Drain-Source Diode Forward Voltage Veg = OV, I= -0.26A (note 1) BSS84 0.95 | -1.2 v Veg = OV, 1,=-0.34A (note 1) BSS110 -1 1.2 Note: 1. Pulse Test: Pulse Width < 300 jis, Duty Cycle < 2.0% 5-1 20 BSS84 Rev. B1/BSS110. Rev. A1Typical Electrical Characteristics = -10V 8.065 5.0 -4.5 Ip , DRAIN-SOURCE CURRENT (A) 0 a 2 a 4 5 6 Vos . ORAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Ip = -0.13A 1.4 |- Vg = -10V Rogion) NORMALIZED DRAIN-SOURCE ON-RESISTANCE a8 ~ as | | 50 -25 9 25 50 75 100 125 150 T,, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 1 I Vog = -10V Ty= -55C Lf. Ts ZL 2 08 LL z 5 Z 2 06 x a a Y/ =z = 0.4 a a ~ 0.2 0 2 4 4 8 Veg , GATE TO SOURCE VOLTAGE {V} Figure 5. Transfer Characteristics. Ros(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE Ros(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE Vin. NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE -0.2 0.4 0.6 0.8 A Ip. ORAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. oT Vag = -10V 2.5 2 Ty = 126C ed i | ! 25C : nt 4 55C | 05 [ i | i 0.2 -0.4 -0.6 -0.8 4 Ip, DRAIN CURRENT (A} Figure 4. On-Resistance Variation with Drain Current and Temperature. Vos = Vos ip =-imA 0.95 PS 0.9 ~ 0.85 LL -50 -25 0 25 50 75 100 125 4150 T_, JUNCTION TEMPERATURE {'C) Figure 6. Gate Threshold Variation with Temperature. 5-121 BSS84 Rev. 81 / BSS110. Rev. At OLLSSa/rssSsaBSS84/BSS110 Typical Electrical Characteristics (continued) 04 0.6 O8 1 1.2 14 1.6 -Vgp . BODY DIODE FORWARD VOLTAGE (V)} Figure 8. Body Diode Forward Voltage Variation with Source Current and Temperature. Ip = -0.138 1d T 3 Ip = -250uA | 7 05 < dD =~ iM z . # < 2 ! Eb o $ 1.05} G 02 NZ : c a2 5 Ot 38 $ x g Zz 0.05 2% 1 z 2 a Su | a > g 0.01 oO 6 0.45 va @ 0.008 a x z a s T a a 09 + 4 9.001 -50 -25 0 25 50 75 400 125 150 02 Ty, . JUNCTION TEMPERATURE ( C) Figure 7. Breakdown Voitage Variation with Temperature. 10 a 6 Ta LE Le CAPACITANCE (pF) f= 1 MHz Vg - GATE-SOURCE VOLTAGE (V) Ves = OV O14 0.2 0.8 1 2 5 10 -Vgg. DRAIN TO SOURCE VOLTAGE (V) 20 30 50 0 Figure 9. Capacitance Characteristics. Vpp t gion} VIN Ry x / < a Do Vout yo Vout Ves i, so. Roen ol |) | oDuT ( }) OWS L / S74 Ss Vin Figure 11. Switching Test Circuit. 2 | 3 / L 05 1 15 2 Q gq. GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. PULSE WIDTH INVERTED Figure 12. Switching Waveforms. 5-122 BSS84 Rev. B1/BSS110. Rev. A1Typical Electrical Characteristics (continued) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE O58 0.4 0.3 9.2 TRANSCONDUCTANCE (SHEMENS} Seg Vos =-10V 0.4 -0.6 1 DRAIN CURRENT (A) -0.2 Figure 13. Transconductance Variation with Drain Current and Temperature. a2 0.1 0.05 0.02 0.01 Single Pulse 0.001 "9.0001 0.001 0.01 Figure 15. Transient Thermal Response Curve. Note : Characterization performed using a circuit board with 175C/W typical -0.8 1 0.5 0.4 0.05 +l . DRAIN CURRENT (A) 01 ty, TIME (sec) case-to-ambient thermal resistance. Vgg =-10V SINGLE PULSE T, = 26C 2 5 10 20 30 - Vos . DRAIN-SOURCE VOLTAGE (V} 50 80 Figure 14. Maximum Safe Operating Area. Rega (0 = c(t) * Resa , Rava = 350C/W | P(pk) bat ty 1 _ -tg7 Ty-Ta =P * Roja (ty Duty Cycle, D =; ft 100 300 5-123 BSS84 Rev. B1 /BSS110. Rev. At OLLSS&/r8SsSa