HEXFET® Power MOSFET
IRF7701GPbF
Absolute Maximum Ratings
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05/15/09
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for use
in battery and load management.
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Description
lUltra Low On-Resistance
l P-Channel MOSFET
lVery Small SOIC Package
lLow Profile (< 1.1mm)
lAvailable in Tape & Reel
lLead-Free
lHalogen-Free
Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -10
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -8.0 A
IDM Pulsed Drain Current -80
PD @TA = 25°C Power Dissipation 1.5
PD @TA = 70°C Power Dissipation 0.96
Linear Derating Factor 12 mW/°C
VGS Gate-to-Source Voltage ± 8.0 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
W
TSSOP-8
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VDSS RDS(on) max ID
0.011@VGS = -4.5V -10A
-12V 0.015@VGS = -2.5V -8.5A
0.022@VGS = -1.8V -7.0A
Parameter Max. Units
RθJA Maximum Junction-to-Ambient83 °C/W
Thermal Resistance
PD - 96146A
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Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V
trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = -1.5A
Qrr Reverse RecoveryCharge ––– 53 80 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
 
  -80
-1.5
A
When mounted on 1 inch square copper board, t<10 sec
S
D
G
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.006 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.011 VGS = -4.5V, ID = -10A
RDS(on) Static Drain-to-Source On-Resistance  ––– 0.015 VGS = -2.5V, ID = -8.5A
 ––– 0.022 VGS = -1.8V, ID = -7.0A
VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 21 ––– ––– S VDS = -10V, ID = -10A
––– ––– 1.0 VDS = -12V, VGS = 0V
––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V
QgTotal Gate Charge ––– 69 100 ID = -8.0A
Qgs Gate-to-Source Charge ––– 9.1 14 nC VDS = -9.6V
Qgd Gate-to-Drain ("Miller") Charge ––– 21 32 VGS = -4.5V
td(on) Turn-On Delay Time ––– 19 ––– VDD = -6.0V
trRise Time ––– 20 ––– ID = -1.0A
td(off) Turn-Off Delay Time ––– 240 ––– RD = 6.0Ω
tfFall Time ––– 220 ––– VGS = -4.5V
Ciss Input Capacitance ––– 5050 ––– VGS = 0V
Coss Output Capacitance ––– 1520 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 1120 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
IDSS Drain-to-Source Leakage Current
nA
ns
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Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.01
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.0V
0.1
1
10
100
0.1 1 10
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.0V
0.1
1
10
100
1.0 1.5 2.0 2.5 3.0
V = -10V
20µs PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-10A
Fig 4. Normalized On-Resistance
Vs. Temperature
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
020 40 60 80 100
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-10A
V =-9.6V
DS
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
110 100
-VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs + C
gd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
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Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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Fig 12. Typical On-Resistance Vs. Drain
Current
Fig 11. Typical On-Resistance Vs. Gate
Voltage
0 20 40 60 80 100
-ID , Drain Current (A)
0.005
0.010
0.015
0.020
RDS (on) , Drain-to-Source On Resistance (Ω)
VGS = -2.5V
VGS = -4.5V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
QG
QGS QGD
VG
Charge
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
1.5 2.5 3.5 4.5
-VGS, Gate -to -Source Voltage (V)
0.00
0.01
0.02
0.03
0.04
0.05
RDS(on), Drain-to -Source On Resistance (Ω)
ID = -10A
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Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time
0.01 0.10 1.00 10.00 100.00
Time (sec)
0
10
20
30
40
Power (W)
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.00
0.20
0.40
0.60
0.80
-VGS(th) , Variace ( V )
ID = -250µA
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
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IRF7701GPbF
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/2009
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TSSOP8 Part Marking Information
TSSOP-8 Tape and Reel Information
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