PD - 96146A IRF7701GPbF l l l l l l l HEXFET(R) Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.1mm) Available in Tape & Reel Lead-Free Halogen-Free VDSS -12V RDS(on) max ID 0.011@VGS = -4.5V 0.015@VGS = -2.5V -10A -8.5A 0.022@VGS = -1.8V -7.0A Description HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area of the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. ' * ' 6 6 * 6 ' 6 6 ' TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -12 -10 -8.0 -80 1.5 0.96 12 8.0 -55 to + 150 V mW/C V C Max. Units 83 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 05/15/09 IRF7701GPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- -0.45 21 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.006 --- V/C Reference to 25C, I D = -1mA --- 0.011 VGS = -4.5V, ID = -10A --- 0.015 VGS = -2.5V, ID = -8.5A --- 0.022 VGS = -1.8V, ID = -7.0A --- -1.2 V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -10A --- 1.0 VDS = -12V, VGS = 0V A --- -25 VDS = -9.6V, VGS = 0V, TJ = 70C --- -100 VGS = -8.0V nA --- 100 VGS = 8.0V 69 100 ID = -8.0A 9.1 14 nC VDS = -9.6V 21 32 VGS = -4.5V 19 --- VDD = -6.0V ns 20 --- ID = -1.0A 240 --- RD = 6.0 220 --- VGS = -4.5V 5050 --- VGS = 0V 1520 --- pF VDS = -10V 1120 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -1.5 -80 --- --- --- --- 52 53 -1.2 78 80 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.5A, VGS = 0V TJ = 25C, IF = -1.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t<10 sec Pulse width 300s; duty cycle 2%. 2 www.irf.com IRF7701GPbF 100 100 VGS -7.00V -4.5V -3.0V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 1 -1.0V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 -I D , Drain-to-Source Current (A) 10 1 V DS = -10V 20s PULSE WIDTH 3.0 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 TJ = 150 C www.irf.com 10 Fig 2. Typical Output Characteristics TJ = 25 C 2.5 1 -VDS , Drain-to-Source Voltage (V) 100 2.0 20s PULSE WIDTH TJ = 150 C 0.1 0.1 Fig 1. Typical Output Characteristics 1.5 -1.0V 1 -VDS , Drain-to-Source Voltage (V) 0.1 1.0 VGS -7.00V -4.5V -3.0V -2.5V -1.8V -1.5V -1.2V BOTTOM -1.0V TOP TOP ID = -10A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7701GPbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 4000 Coss 2000 Crss 0 1 10 6 4 2 FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 100 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) TJ = 150 C 10 100 TJ = 25 C 1 100us 1ms 10 10ms 0.1 0.2 TA = 25 C TJ = 150 C Single Pulse V GS = 0 V 0.4 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS =-9.6V 8 0 100 ID = -10A -V DS, Drain-to-Source Voltage (V) -ISD , Reverse Drain Current (A) C, Capacitance(pF) 6000 10 -VGS , Gate-to-Source Voltage (V) 8000 1.4 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7701GPbF 10.0 V DS VGS -ID , Drain Current (A) 8.0 RD D.U.T. RG - + VDD 6.0 VGS Pulse Width 1 s Duty Factor 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 td(on) 0.0 tr t d(off) tf VGS 25 50 75 100 125 TC , Case Temperature ( C) 10% 150 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 PDM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 0.05 RDS (on) , Drain-to-Source On Resistance () RDS(on) , Drain-to -Source On Resistance () IRF7701GPbF 0.04 0.03 ID = -10A 0.02 0.01 0.00 1.5 2.5 3.5 4.5 0.020 0.015 VGS = -2.5V 0.010 VGS = -4.5V 0.005 0 20 -VGS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage 40 60 80 100 -I D , Drain Current (A) Fig 12. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS .2F .3F QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 12V IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com 0.80 40 0.60 30 ID = -250A Power (W) -VGS(th) , Variace ( V ) IRF7701GPbF 0.40 20 10 0.20 0 0.00 -75 -50 -25 0 25 50 75 100 125 150 0.01 0.10 1.00 10.00 T J , Temperature ( C ) Time (sec) Fig 14. Threshold Voltage Vs. Temperature Fig 15. Typical Power Vs. Time www.irf.com 100.00 7 IRF7701GPbF TSSOP8 Package Outline Dimensions are shown in milimeters (inches) ' GGG & $ % %27+6,'(6 ; ( ,1'(; 0$5. H % ; 0,//,0(7(56 0$; 0,1 120 %6& %6& %6& ' ( ( H ( ( 02$$',0(16,216 6 < 0 % 2 / $ $ $ E F / / DDD EEE FFF GGG FFF H $ ,1&+(6 120 0$; %6& %6& 0,1 + $ ;E & EEE $ ;F & $ % / DDD & 685) /($'$66,*10(176 ' 6 6 * 6,1*/( ',( ' 6 6 ' ' 6 6 * '8$/ ',( ' 6 6 * ;/ 127(6 ',0(16,21,1*$1'72/(5$1&,1*3(5$60(<0 ',0(16,216$5(6+2:1,10,//,0(7(56$1',1&+(6 &21752//,1*',0(16,210,//,0(7(5 '$7803/$1(+,6/2&$7('$66+2:1 '$780$$1'%72%('(7(50,1('$7'$7803/$1(+ ',0(16,216'$1'($5(0($685('$7'$7803/$1(+ ',0(16,21/,67+(/($'/(1*7+)2562/'(5,1*72$68%675$7( 287/,1(&21)250672-('(&287/,1(0$$ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF7701GPbF TSSOP8 Part Marking Information (;$03/( 7+,6,6$1,5)3%) 3$57180%(5 '$7(&2'(<:: $66(0%/<6,7(&2'( /27&2'( 3 /HDG)UHHLQGLFDWRU TSSOP-8 Tape and Reel Information PP PP )(('',5(&7,21 PP 127(6 7$3( 5((/287/,1(&21)250672(,$ (,$ Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/2009 www.irf.com 9