Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC
power amplifier has a small signal gain of 21.0 dB with +35
dBm saturated output power. The device also includes
Lange couplers to achieve good input/output return loss.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect and
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
27.0-33.0 GHz GaAs MMIC
Power Amplifier
Ka-Band 4 W Power Amplifier
Balanced Design Provides Good Input/Output Match
21.0 dB Small Signal Gain
+35.0 dBm Saturated Output Power
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Features
General Description
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
mA
mA
Min.
27.0
-
-
-
-
-
-
-
-1.0
-
-
-
Typ.
-
20.0
20.0
21.0
+/-1.0
50.0
+35.0
+5.0
-0.7
250
625
1185
Max.
33.0
-
-
-
-
-
-
+6.0
0.0
300
750
1435
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.5 VDC
325,825,1575 mA
+0.3 VDC
TBD
-65 to +165 OC
-55 to MTTF Table
MTTF Table
Chip Device Layout
Page 1 of 5
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
2
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
March 2007 - Rev 27-Mar-07 P1027-BD
XP1027-BD
27.0-33.0 GHz GaAs MMIC
Power Amplifier
Power Amplifier Measurements
Page 2 of 5
25 26 27 28 29 30 31 32 33 34 35
Frequency (G Hz)
XP1027-BD: Sparams a t Vd= 5V , Vg =-0.7V
-32
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
XP1027-BD: Pout (dBm) vs. Freq (GHz)
Vds = 5.0 volts (red), 5.5 volts (green), 6.0 volts (blue).
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
25 26 27 28 29 30 31 32 33 34 35
Freq (GHz)
Pout (dBm)
, Vd (V)=5, Pinr (dBm)=0, RC=R9C11
, Vd (V)=5, Pinr (dBm)=1, RC=R9C11
, Vd (V)=5, Pinr (dBm)=2, RC=R9C11
, Vd (V)=5, Pinr (dBm)=3, RC=R9C11
, Vd (V)=5, Pinr (dBm)=4, RC=R9C11
, Vd (V)=5, Pinr (dBm)=5, RC=R9C11
, Vd (V)=5, Pinr (dBm)=6, RC=R9C11
, Vd (V)=5, Pinr (dBm)=7, RC=R9C11
, Vd (V)=5, Pinr (dBm)=8, RC=R9C11
, Vd (V)=5, Pinr (dBm)=9, RC=R9C11
, Vd (V)=5, Pinr (dBm)=10, RC=R9C11
, Vd (V)=5, Pinr (dBm)=11, RC=R9C11
, Vd (V)=5, Pinr (dBm)=12, RC=R9C11
, Vd (V)=5, Pinr (dBm)=13, RC=R9C11
, Vd (V)=5, Pinr (dBm)=14, RC=R9C11
, Vd (V)=5, Pinr (dBm)=15, RC=R9C11
, Vd (V)=5, Pinr (dBm)=16, RC=R9C11
, Vd (V)=5, Pinr (dBm)=17, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=0, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=1, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=2, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=3, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=4, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=5, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=6, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=7, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=8, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=9, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=10, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=11, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=12, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=13, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=14, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=15, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=16, RC=R9C11
, Vd (V)=5.5, Pinr (dBm)=17, RC=R9C11
, Vd (V)=6, Pinr (dBm)=0, RC=R9C11
, Vd (V)=6, Pinr (dBm)=1, RC=R9C11
, Vd (V)=6, Pinr (dBm)=2, RC=R9C11
, Vd (V)=6, Pinr (dBm)=3, RC=R9C11
, Vd (V)=6, Pinr (dBm)=4, RC=R9C11
, Vd (V)=6, Pinr (dBm)=5, RC=R9C11
, Vd (V)=6, Pinr (dBm)=6, RC=R9C11
, Vd (V)=6, Pinr (dBm)=7, RC=R9C11
, Vd (V)=6, Pinr (dBm)=8, RC=R9C11
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
P1027-BD
March 2007 - Rev 27-Mar-07
0 2 4 6 8 101214161820222426283032343638404244464850
Frequency (GHz)
XP1027-BD: S12 at Vd=5V, Vg=-0.7V
-90
-85
-80
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
RF In
RF Out
Vg3
Vg2Vg1
Vd3Vd2VVd1
1
2 3 4 5 6 7
8
91011
12
13
14
3.500
(0.138)
1
2 3 4 56 7
8
91011
12
13
0.961
(0.038)
1.361
(0.054)
1.761
(0.069)
2.561
(0.101)
3.361
(0.132)
2.961
(0.117)
2.561
(0.101)
1.761
(0.069)
1.361
(0.054)
0.961
(0.038)
0.0
0.0
1.274
(0.050)
14
2.961
(0.117)
3.361
(0.132)
2.226
(0.088)
4.000
(0.158)
27.0-33.0 GHz GaAs MMIC
Power Amplifier
Mechanical Drawing
Bias Arrangement Bypass Capacitors - See App Note [2]
(Note: Engineering designator is 30SPA0536)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 8.68 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vg1A)
Bond Pad #3 (Vd1A)
Bond Pad #4 (Vg2A)
Bond Pad #5 (Vd2A)
Bond Pad #6 (Vg3A)
Bond Pad #7 (Vd3A)
Bond Pad #8 (RF Out)
Bond Pad #9 (Vd3B)
Bond Pad #10 (Vg3B)
Bond Pad #11 Vd2B)
Bond Pad #12 (Vg2B)
Bond Pad #13 (Vd1B)
Bond Pad #14 (Vg1B)
Page 3 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
P1027-BD
XP1027-BD
XP1027-BD
March 2007 - Rev 27-Mar-07
27.0-33.0 GHz GaAs MMIC
Power Amplifier
App Note [1] Biasing - It is recommended to separately bias each amplifier stage Vd1 through Vd3 at Vd(1,2,3)=5.0V with Id1=250mA Id2=625mA,
and Id3=1185mA. Separate biasing is recommended if the amplifier is to be used at high levels of saturation, where gate rectification will alter the
effective gate control voltage. For non-critical applications it is possible to parallel all stages and adjust the common gate voltage for a total drain
current Id(total)=2060 mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this
gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a
single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of
the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is
available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or
drains are tied together) of DC bias pads. All DC pads have been tied together on chip and can be biased from either side.
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3 and Vg1,2,3) needs to have DC bypass capacitance
(~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. All DC pads have been tied
together on chip and can be biased from either side.
Page 4 of 5
MTTF Table (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
FITs
E+
E+
E+
MTTF Hours
E+
E+
E+
Rth
C/W
C/W
C/W
Bias Conditions: Vd1=Vd2=Vd3=5.0V, Id1=250mA, Id2=625mA, Id3=1185mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
P1027-BD
March 2007 - Rev 27-Mar-07
27.0-33.0 GHz GaAs MMIC
Power Amplifier
Page 5 of 5
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
P1027-BD
Handling and Assembly Information
Part Number for Ordering Description
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
XP1027-BD-000V RoHS compliant die packed in vacuum release gel packs
XP1027-BD-EV1 XP1027-BD evaluation module
March 2007 - Rev 27-Mar-07
