FLD5F20NP-E58 - Eudyna Devices, Inc.

Edition 1.3

July 2004

FLD5F20NP-E

FEATURES

• Modulator Integrated DFB Laser Diode Module

• CW operation of DFB laser section

• Modulation voltage applied only to modulator section

• High speed butterfly package with GPO connection

• Built-in optical isolator, monitor photodiode, thermistor, and

thermo-electric cooler

• Available at C-Band ITU-T grid wavelengths between 1529.55nm

thru 1563.05nm

APPLICATION

This MI DFB laser is intended for long reach applications (≤80km)

at 10Gb/s.

DESCRIPTION

The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator

monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation

voltage is applied to the modulator section while the laser section operates CW allowing extremely low

wavelength chirping. Extinction ratios of more than 10 dB can be achieved with 2.6 Vp-p modulation.

The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical

coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a

thermo-electric cooler.

Parameter Symbol

Storage Temperature Tstg +85- °C

-40

Operating Case Temperature +70- °C

Top -20

Optical Output Power 5CW mW

Pf-

Laser Forward Current 150CW mA

IF-

Laser Reverse Voltage 2CW V

VR-

Modulator Forward Voltage +1CW V

Vm-5

Photodiode Forward Current 1-mA--

10-V

Photodiode Reverse Voltage VDR -

10260°C sec

Lead Soldering Time --

TEC Voltage +2.5Cooling

-Heating V

Vc-

-2.5

TEC Current +1.4Cooling

-Heating

Ic-

-0.9

Thermistor Temperature +70-20ATC Operation °CTth

Rating

Unit

Min. Max.

ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified)

Condition

1,550nm Modulator

Integrated DFB Laser

FLD5F20NP-E

Parameter Symbol

OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset, Tc = 25°C, BOL, unless otherwise specified)

Note (1) Eudyna Test System

9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod)

Dispersion=1600ps/nm, Dispersion penalty at

Bit Error Rate = 1.0E-10

Note (2) Eudyna Test System

9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod)

Note (3) Relation between resistance and temperature (°K) is: Rth (T) = Rth (25°C)*exp[B(1/T-1/298)]

Note (4) Reference Table 1 for Wavelength Table

Unit

Limits

Max.TypeMin.

Test Condition

Dispersion Penalty dP dB2--

Sidemode Suppression Ratio SSR dB-35 -Note (2)

Wavelength Drift -nm0.1-0.1 -after 20 years

Peak Wavelength λpnmNote (4)

Fall Time Tfps

25-20

Rise Time Trps

25-20

IF=Iop,Vm=Vo, 20 to 80%

RF Return Loss S11 dB

8- -

f=DC-5GHz, 50Ω Test Set,

Vm=Vo, IF=Iop

RF Return Loss S11 dB

5- -

f=5-10GHz, 50Ω Test Set,

Vm=Vo, IF=Iop

Cut-off Frequency S21 GHz

10 - -

-3dB bandwidth,

Vm=Vo-0.5|Vmod |, IF=Iop

Optical Output Power

(Avg. Power) Pf dBm--2.0 -

Wavelength Stability with

Case Temperature -pm/°C±1.0--

Note (1)

Forward Voltage VFV- 2.01.4

CW, IF=Iop

Optical Isolation IsdB-25 35Tc=-20 to +70°C

TEC Power Dissipation PTEC W3.3--

IF=Iop

TEC Capacity ∆T°C-70-Tset -

PTEC=3.3W, IF=Iop

TEC Current ITEC A1.3--

IF=Iop, ∆T=(70-Tset)[°C]

TEC Voltage VTEC V2.5--

IF=Iop, ∆T=(70-Tset)[°C]

Thermal Resistance Rth kΩ

10.59.5 10.0

TL=25°C , Tc=+25°C

Thermistor B Constant (Note 3) BK3,6303,270 3,450

In-Band Ripple ∆GdB

-±1.0

IF=Iop, f=0.1-10GHz,

Vm=Vo-0.5|Vmod |

Threshold Current Ith mA-30-

CW, Vm=Vo

On Level Modulation VoV-0.7 0--

Modulator Drive Voltage Vmod V- 2.6-(Vo-Vmod)≥-3.3V, Rext=10dB

Relative Intensity Noise RIN dB/Hz- -120-

f=10 MHz to 8.5 GHz,

Vm=Vo, IF=Iop, 8% Reflection

Operating Current Iop mA40 100-

Extinction Ratio Rext dB--10

IF=Iop, Vm=Vo (at On Level)

Vm=Vo-Vmod (at Off Level)

1,550nm Modulator

Integrated DFB Laser

FLD5F20NP-E

10Gb/s

PRBS=223-1

IF=Iop

Vm=Vo/(Vo-2)

Vo=-0.7V

TLD=25°C

Fig. 1 Lasing Spectrum

Wavelength (Span=1 nm/div, Res.=0.1nm)

Fig. 2 Output Power & Monitor Current

vs. Forward Current

Forward Current, IF (mA)

Output Power, Pf (mW)

Monitor Current (mA)

20 40 60 80 1000

0.9

1.2

0.6

0.3

Relative Intensity (10 dB/div.)

1,550nm Modulator

Integrated DFB Laser

FLD5F20NP-E

Fig. 3 Extinction Ratio vs.

Modulation Applied Voltage

Fig. 4 Cut-off Frequency (S21)

Frequency, f (GHz)

Modulation Applied Voltage (V)

Extinction Ratio (dB)

Relative Output (dB)

-10

-5

-15

-20

0.5 1.0 1.5 2.0 2.50

51015200

-12

-9

-6

-3

Fig. 5 RF Return Loss (S11)

Frequency, f (GHz)

Return Loss (dB)

51015200

-30

-20

-10

Fig. 6 Transmission Characteristics

TLD=25°C,

ILD=90mA, Vm=-0.7V/2.0Vpp

9.95328Gb/s, PRBS=223-1,

Dispersion penalty @BER=10-10

=+0.7 dB: 1600 ps/nm

Back to Back

After 1600 ps/nm

Received Optical Power (dBm)

Bit Error Rate

10-12

10-10

10-11

10-8

10-9

10-6

10-5

10-7

10-4

-23 -22 -17 -16-18-19-20-21

1,550nm Modulator

Integrated DFB Laser

FLD5F20NP-E

Table 1 Wavelength Table

Part Number

Wavelength (nm)

(TL=Tset)

(in vacuum)

Tolerance (nm)Frequency (THz)

FLD5F20NP-E60 1529.55 196.00 ±0.1

FLD5F20NP-E59 1530.33 195.90 ±0.1

FLD5F20NP-E58 1531.12 195.80 ±0.1

FLD5F20NP-E57 1531.90 195.70 ±0.1

FLD5F20NP-E56 1532.68 195.60 ±0.1

FLD5F20NP-E55 1533.47 195.50 ±0.1

FLD5F20NP-E54 1534.25 195.40 ±0.1

FLD5F20NP-E53 1535.04 195.30 ±0.1

FLD5F20NP-E52 1535.82 195.20 ±0.1

FLD5F20NP-E51 1536.61 195.10 ±0.1

FLD5F20NP-E50 1537.40 195.00 ±0.1

FLD5F20NP-E49 1538.19 194.90 ±0.1

FLD5F20NP-E48 1538.98 194.80 ±0.1

FLD5F20NP-E47 1539.77 194.70 ±0.1

FLD5F20NP-E46 1540.56 194.60 ±0.1

FLD5F20NP-E45 1541.35 194.50 ±0.1

FLD5F20NP-E44 1542.14 194.40 ±0.1

FLD5F20NP-E43 1542.94 194.30 ±0.1

FLD5F20NP-E42 1543.73 194.20 ±0.1

FLD5F20NP-E41 1544.53 194.10 ±0.1

FLD5F20NP-E40 1545.32 194.00 ±0.1

FLD5F20NP-E39 1546.12 193.90 ±0.1

FLD5F20NP-E38 1546.92 193.80 ±0.1

FLD5F20NP-E37 1547.72 193.70 ±0.1

FLD5F20NP-E36 1548.51 193.60 ±0.1

FLD5F20NP-E35 1549.32 193.50 ±0.1

FLD5F20NP-E34 1550.12 193.40 ±0.1

FLD5F20NP-E33 1550.92 193.30 ±0.1

FLD5F20NP-E32 1551.72 193.20 ±0.1

FLD5F20NP-E31 1552.52 193.10 ±0.1

FLD5F20NP-E30 1553.33 193.00 ±0.1

FLD5F20NP-E29 1554.13 192.90 ±0.1

FLD5F20NP-E28 1554.94 192.80 ±0.1

FLD5F20NP-E27 1555.75 192.70 ±0.1

FLD5F20NP-E26 1556.56 192.60 ±0.1

FLD5F20NP-E25 1557.36 192.50 ±0.1

FLD5F20NP-E24 1558.17 192.40 ±0.1

FLD5F20NP-E23 1558.98 192.30 ±0.1

FLD5F20NP-E22 1559.79 192.20 ±0.1

FLD5F20NP-E21 1560.61 192.10 ±0.1

FLD5F20NP-E20 1561.42 192.00 ±0.1

FLD5F20NP-E19 1562.23 191.90 ±0.1

FLD5F20NP-E18 1563.05 191.80 ±0.1

1,550nm Modulator

Integrated DFB Laser

FLD5F20NP-E

25.0±0.5

29.97±0.25

5.08±0.25

17.24±0.25

15.24±0.25

2.54±0.20 7-0.5

PIN 1

4-ø2.67±0.2

PIN 7 8.17±0.25

5.41±0.25

7-0.15±0.05

26.04±0.25

20.83±0.25

ø4.16

10.0±0.25

1.25

12.7±0.25

8.25±0.20

ø0.9±0.1

ø5.2±0.25

8.89±0.15

# PIN DESIGNATIONS

1 Thermistor

2 Thermistor

3 LD Anode

4 Power Monitor Anode

5 Power Monitor Cathode

6 Thermoelectirc Cooler (+)

7 Thermoelectric Cooler (-)

8 Modulator Anode (-)

22.00±0.25

PIN 8

* Pigtail length (L) and connector type are

specified in the detail (individual) specification.

Case Ground: LD Cathode

4.83±0.20

0.5±0.2

5.47±0.2

CONNECTOR

TOP VIEW

TEC TH

10KΩ

50Ω

54321

“NP” PACKAGE UNIT: mm

1,550nm Modulator

Integrated DFB Laser

Eudyna Devices Inc. products contain gallium arsenide

(GaAs) which can be hazardous to the human body and the environment.

For safety, observe the following procedures:

CAUTION

• Do not put this product into the mouth.

• Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by-products

are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this

product. This product must be discarded in accordance with methods

specified by applicable hazardous waste procedures.

For further information please contact:

Eudyna Devices USA Inc.

2355 Zanker Rd.

San Jose, CA 95131-1138, U.S.A.

TEL: (408) 232-9500

FAX: (408) 428-9111

www.us.eudyna.com

Eudyna Devices Europe Ltd.

Network House

Norreys Drive

Maidenhead, Berkshire SL6 4FJ

United Kingdom

TEL: +44 (0) 1628 504800

FAX: +44 (0) 1628 504888

Eudyna Devices Asia Pte Ltd.

Hong Kong Branch

Rm. 1101, Ocean Centre, 5 Canton Rd.

Tsim Sha Tsui, Kowloon, Hong Kong

TEL: +852-2377-0227

FAX: +852-2377-3921

Eudyna Devices Inc.

Sales Division

1, Kanai-cho, Sakae-ku

Yokohama, 244-0845, Japan

TEL: +81-45-853-8156

FAX: +81-45-853-8170

Eudyna Devices Inc. reserves the right to change products and specifications

without notice. The information does not convey any license under rights of

Eudyna Devices Inc. or others.

Printed in U.S.A.