APTM100H35FT3G
APTM100H35FT3G
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Rev 2 July, 2006
www.microsemi
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com 1
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6
11
Q4
1413
23
Q2
10
8
7
3
4
22
29 31
R1
15 16
32
26
19
18
Q1 Q3
27
30
16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 1000 V
Tc = 25°C 22
ID Continuous Drain Current Tc = 80°C 17
IDM Pulsed Drain current 88
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 420 m
PD Maximum Power Dissipation Tc = 25°C 390 W
IAR Avalanche current (repetitive and non repetitive) 25 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000 mJ
VDSS = 1000V
RDSon = 350m typ @ Tj = 25°C
ID = 22A @ Tc = 25°C
Applicatio
n
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate c harge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outsta ndi ng performance at hi gh freq ue nc y operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
F
ull - Bridge
MOSFET Power Module
APTM100H35FT3G
APTM100H35FT3G
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Rev 2 July, 2006
www.microsemi
.
com 2
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6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 1000V Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V Tj = 125°C 500
µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 11A 350 420
m
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30V, VDS = 0V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 5.2
Coss Output Capacitance 0.88
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.16
nF
Qg Total gate Charge 186
Qgs Gate – Source Charge 24
Qgd Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 22A 122
nC
Td(on) Tur n-on Delay Ti me 18
Tr Rise Time 12
Td(off) Turn-off Delay Time 155
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5 40
ns
Eon Turn-on Switching Energy 900
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBu s = 670V
ID = 22A, RG = 5Ω 623
µJ
Eon Turn-on Switching Energy 1423
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBu s = 670V
ID = 22A, RG = 5Ω 779
µJ
Source - Drain diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tc = 25°C 22 IS Continuo us Source current
(Body diode)
Tc = 80°C 17 A
VSD Diode Forward Voltage VGS = 0V, IS = - 22A 1.3 V
dv/dt Peak Diode Recovery X 18 V/ns
Tj = 25°C 320
trr Reverse Recovery Time Tj = 125°C 650 ns
Tj = 25°C 3.6
Qrr Reverse Recovery Charge
IS = - 22A
VR = 670V
diS/dt = 100A/µs
Tj = 125°C 9.72
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS - 22A di/dt 700A/µs VR VDSS Tj 150°C
APTM100H35FT3G
APTM100H35FT3G
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Rev 2 July, 2006
www.microsemi
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com 3
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
RthJC Junction to Case Thermal Resistance 0.32 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 k
B 25/85 T
25 = 298.15 K 3952 K
TT
B
R
RT
11
exp
25
85/25
25
SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTM100H35FT3G
APTM100H35FT3G
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Rev 2 July, 2006
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com 4
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
10
20
30
40
50
60
0 5 10 15 20 25 30
VDS , Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=15, 10&8V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
80
0123456789
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0 102030405060
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 11A
0
5
10
15
20
25
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM100H35FT3G
APTM100H35FT3G
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Rev 2 July, 2006
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0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS
(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID=11A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
10ms
1ms
100µs
1
10
100
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=200V
VDS=500V
VDS =800V
0
2
4
6
8
10
12
14
0 50 100 150 200 250
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=22A
TJ=25°C
APTM100H35FT3G
APTM100H35FT3G
–
Rev 2 July, 2006
www.microsemi
.
com 6
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6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
180
0 1020304050
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
70
80
0 1020304050
ID, Drain Current (A)
tr and tf (ns)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
0 1020304050
ID, Drain Current (A)
Switching Energy (mJ)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
4
0 5 10 15 20 25 30 35
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=670V
ID=22A
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
250
5 8 10 13 15 18 20
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
M icros e mi re se rve s the rig ht to c ha nge , without notice , t he spe cificatio ns and informatio n co ntaine d he rein
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