2SK1628, 2SK1629 Silicon N Channel MOS FET REJ03G0960-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1 Rev.3.00 May 15, 2006 page 1 of 6 1. Gate 2. Drain 3. Source S 2 3 2SK1628, 2SK1629 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Symbol VDSS 2SK1628 2SK1629 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Ratings 450 500 30 30 120 30 200 150 -55 to +150 VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol 2SK1628 2SK1629 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1628 current 2SK1629 V(BR)DSS V(BR)GSS IGSS IDSS Gate to source cutoff voltage Static drain to source on 2SK1628 state resistance 2SK1629 RDS(on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Body to drain diode reverse recovery time Note: 3. Pulse test Rev.3.00 May 15, 2006 page 2 of 6 VGS(off) trr Min 450 500 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 30 -- -- -- -- -- -- 10 250 V A A 2.0 -- -- 12 -- -- -- -- -- -- -- -- -- -- 0.20 0.22 20 2800 780 90 32 140 200 100 1.1 600 3.0 0.25 0.27 -- -- -- -- -- -- -- -- -- -- V IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V *3 S pF pF pF ns ns ns ns V ns ID = 15 A, VDS = 10 V *3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 15 A, VGS = 10 V, RL = 2 IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 100 A/s 2SK1628, 2SK1629 Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 300 Pch (W) 500 2 2SK1629 Ta = 25C 100 1 150 Tc (C) 2SK1628 50 10 V 30 100 300 1000 VDS (V) 20 VDS = 20 V Pulse Test 16 ID ID (A) 6V 40 10 Typical Transfer Characteristics Pulse Test 7V 3 Drain to Source Voltage Typical Output Characteristics (A) ( Tc Operation in = 25 this area is C ) limited by RDS (on) t) Drain Current n o Sh Channel Dissipation tio (1 50 Case Temperature 30 12 Drain Current Drain Current s ra 0.5 0 5V 20 10 8 Tc = 75C 4 25C -25C VGS = 4 V 0 0 0 10 20 30 Drain to Source Voltage 40 50 0 VDS (V) Pulse Test 8 6 ID = 20 A 4 10 A 2 5A 0 0 4 8 12 Gate to Source Voltage Rev.3.00 May 15, 2006 page 3 of 6 16 20 VGS (V) 4 6 8 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) () 10 2 Gate to Source Voltage Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) s m pe 5 s m O 10 C 10 1 0 s = D 20 1 PW 100 50 0 200 10 100 10 ID (A) 200 5 Pulse Test 2 1 0.5 VGS = 10 V 15 V 0.2 0.1 0.05 1 2 5 10 Drain Current 20 50 ID (A) 100 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 1.0 0.8 VGS = 10 V Pulse Test 0.6 ID = 20 A 0.4 10 A 5A 0.2 0 -40 0 40 80 120 160 10 5 2 1.0 0.5 0.2 0.5 1.0 2 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test Capacitance C (pF) Ciss 200 VGS = 0 f = 1 MHz Coss 100 Crss 10 1.0 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 VDD = 100 V 250 V 400 16 400 V VDS 12 VGS 8 200 V DD = 400 V 250 V 100 V 100 0 20 1,000 100 300 10 10,000 500 500 5 Typical Capacitance vs. Drain to Source Voltage 40 80 120 ID = 20 A 160 Gate Charge Qg (nc) Rev.3.00 May 15, 2006 page 4 of 6 4 0 200 500 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) -25C TC = 25C 75C Body to Drain Diode Reverse Recovery Time 1,000 50 0.5 Drain to Source Voltage VDS (V) VDS = 20 V Pulse Test 20 Drain Current ID (A) 5,000 2,000 50 Case Temperature TC (C) Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) () 2SK1628, 2SK1629 td (off) 200 100 tf 50 tr td (on) 20 * VGS = 10 V VDD = 30 V PW = 2 s, duty < 1% * 10 5 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 2SK1628, 2SK1629 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 20 Pulse Test 16 12 8 5 V, 10 V 4 VGS = 0, -10 V 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance S (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1 D=1 0.5 0.3 0.2 ch-c (t) = S (t) * ch-c ch-c = 0.625C/W, TC = 25C 0.1 0.1 0.05 0.03 C/W PDM 0.02 0.01 ulse ot P 1 Sh 0.01 10 T 100 1m 10 m 100 m PW D = PW T 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms Vin Monitor 90 % Vout Monitor Vin D.U.T 10 % RL Vout 50 Vin = 10 V Rev.3.00 May 15, 2006 page 5 of 6 . VDD =. 30 V td (on) 10 % 90 % tr 10 % 90 % td (off) tf 2SK1628, 2SK1629 Package Dimensions JEITA Package Code RENESAS Code PRSS0004ZF-A Previous Code TO-3PL / TO-3PLV MASS[Typ.] 9.9g Unit: mm 5.0 0.2 20.0 0.3 3.3 0.2 20.0 0.6 2.5 0.3 26.0 0.3 6.0 0.2 Package Name TO-3PL 1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 5.45 0.5 0.6 +0.25 -0.1 2.8 0.2 1.0 3.8 7.4 Ordering Information Part Name 2SK1628-E 2SK1629-E Quantity 500 pcs 500 pcs Shipping Container Box (Case) Box (Case) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 May 15, 2006 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. 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