Rev.3.00 May 15, 2006 page 1 of 6
2SK1628, 2SK1629
Silicon N Channel MOS FET REJ03G0960-0300
Rev.3.00
May 15, 2006
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary br eakdown
• Suitable for sw i t c hi ng regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
1. Gate
2. Drain
3. Source
D
G
S
123
2SK1628, 2SK1629
Rev.3.00 May 15, 2006 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
2SK1628 450 Drain to source voltage 2SK1629 VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 30 A
Drain peak current ID(pulse)*1 120 A
Body to drain diode reverse drain current IDR 30 A
Channel dissipation Pch*2 200 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
2SK1628 450
Drain to source
breakdown voltage 2SK1629 V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
2SK1628 VDS = 360 V, VGS = 0
Zero gate voltage drain
current 2SK1629 IDSS — — 250 µA VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
2SK1628 — 0.20 0.25
Static drain to source on
state resistance 2SK1629 RDS(on) — 0.22 0.27 Ω I
D = 15 A, VGS = 10 V *3
Forward transfer admittance |yfs| 12 20 — S ID = 15 A, VDS = 10 V *3
Input capacitance Ciss — 2800 — pF
Output capacitance Coss — 780 — pF
Reverse transfer capacitance Crss — 90 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 32 — ns
Rise time tr — 140 — ns
Turn-off delay time td(off) — 200 — ns
Fall time tf — 100 — ns
ID = 15 A, VGS = 10 V,
RL = 2 Ω
Body to drain diode forward v oltage VDF — 1.1 — V IF = 30 A, VGS = 0
Body to drain diode reverse recover y
time trr — 600 — ns
IF = 30 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1628, 2SK1629
Rev.3.00 May 15, 2006 page 3 of 6
Main Characteristics
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
300
0
100
200
050100
150
500
200
100
20
50
10
2
5
0.5
1
1 3 10 30 100 300 1000
50
0
10
20
30
40
01020304050
5 V
V
GS
= 4 V
20
0
4
8
12
16
02468
10
25°C
Operation in
this area is
limited by R
DS (on)
Pulse Test V
DS
= 20 V
Pulse Test
Ta = 25°C
2SK1629
2SK1628
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS (on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current
10
0
2
4
6
8
048121620
10 A
5 A
I
D
= 20 A
12 51020 50100
5
2
1
0.2
0.5
0.1
0.05
15 V
V
GS
= 10 V
Pulse Test Pulse Test
10 µs
1 ms
PW = 10 ms (1 Shot)
DC Operation (Tc = 25°C)
100 µs
7 V
–25°C
10 V
Tc = 75°C
6 V
2SK1628, 2SK1629
Rev.3.00 May 15, 2006 page 4 of 6
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160
Case Temperature TC (°C)
–40
Static Drain to Source on State
Resistance vs. Temperature
V
GS
= 10 V
Pulse Test
Static Drain to Source on State Resistance
RDS (on) (Ω)
10 A
I
D
= 20 A
5 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
0.5
0.2 0.5 1.0 5 10 20
Drain Current ID (A)
1.0
2
2
75°C
Forward Transfer Admittance yfs (S)
T
C
= 25°C
V
DS
= 20 V
Pulse Test
–25°C
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
5,000
2,000
500
200
100
50
1,000
0.5 1.0 2 5 10 20 50
Typical Capacitance
vs. Drain to Source Voltage
100
01020304050
Drain to Source Voltage VDS (V)
Capacitance C (pF)
Coss
Ciss
Crss
10
V
GS
= 0
f = 1 MHz
1,000
10,000
Dynamic Input Characteristics
500
400
300
200
100
040 80 120 160 200
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
20
16
12
8
4
0
Gate to Source Voltage VGS (V)
V
DD
= 100 V
V
DD
= 400 V
250 V
250 V
V
DS
I
D
= 20 A
400 V
V
GS
100 V
Switching Characteristics
500
100
50
20
10
5
200
Switching Time t (ns)
0.5 1.0 2 5 10 20 50
Drain Current ID (A)
V
GS
= 10 V V
DD
= 30 V
PW = 2 µs, duty < 1%
t
d (off)
t
r
t
f
t
d (on)
•
•
2SK1628, 2SK1629
Rev.3.00 May 15, 2006 page 5 of 6
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
8
4
00.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Pulse Test
5 V, 10 V
V
GS
= 0, –10 V
Vin Monitor
Vout Monitor
R
L
50 Ω
Vin = 10 V
D.U.T
.
V
DD
= 30 V
.
Switching Time Test Circuit
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
Waveforms
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
S
(t)
1
0.1
0.3
D = 1
10 µ
0.03
0.01
100 µ10 m 100 m 1 101 m
T
C
= 25°C
0.5
0.2
0.1
0.02
0.01
1 Shot Pulse
Normalized Transient Thermal Impedance vs. Pulse Width
TPW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) • θch–c
θch–c = 0.625°C/W, T
C
= 25°C
C/W
0.05
2SK1628, 2SK1629
Rev.3.00 May 15, 2006 page 6 of 6
Package Dimensions
20.0 ± 0.3
φ3.3 ± 0.2
1.4
2.2
3.0
1.2
5.45 ± 0.5
5.45 ± 0.5
1.0
3.8
7.4
2.8 ± 0.2
0.6
5.0 ± 0.2
6.0 ± 0.2
26.0 ± 0.3
20.0 ± 0.6
2.5 ± 0.3
+0.25
–0.1
+0.25
–0.1
Previous Code
PRSS0004ZF-A TO-3PL / TO-3PLV
MASS[Typ.]
9.9g
RENESAS CodeJEITA Package Code
Unit: mm
Package Name
TO-3PL
Ordering Information
Part Name Quantity Shipping Container
2SK1628-E 500 pcs Box (Case)
2SK1629-E 500 pcs Box (Case)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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