MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som CM1600HB-34H PRE HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1600HB-34H IC ................................................................ 1600A VCES ....................................................... 1700V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 4 - M8 NUTS 570.25 C C E E CM E G E 140 C 30 C 1240.25 20 C E E CIRCUIT DIAGRAM G C 16.5 3 - M4 NUTS 2.5 6 - 7 MOUNTING HOLES 5 18.5 35 61.5 11 18 LABEL 31.5 28 38 5 14.5 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES Y AR LIMIN on. ange. ificati h l spec ct to c a finaare subje t o n is s it is m h li e: T tric Notice parame Som PRE CM1600HB-34H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Mounting torque -- Mass Conditions VGE = 0V VCE = 0V DC, TC = 85C Pulse Ratings 1700 20 1600 3200 1600 3200 14700 -40 ~ +150 -40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 (Note 1) Pulse TC = 25C, IGBT part (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Unit V V A A A A W C C V N*m N*m N*m kg ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V Min -- Limits Typ -- IC = 160mA, VCE = 10V 4.5 5.5 6.5 V -- 2.60 3.20 144 18.0 7.2 13.2 -- -- -- -- 2.60 -- 300 -- -- 0.008 0.5 -- -- -- -- -- -- 1.60 2.00 2.70 0.80 -- 2.70 -- 0.0085 0.015 -- A Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VGE = VGES, VCE = 0V Tj = 25C IC = 1600A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 850V, IC = 1600A, VGE = 15V VCC = 850V, IC = 1600A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switching operation IE = 1600A, VGE = 0V IE = 1600A die / dt = -3800A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Note 4) -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max 24 Unit mA V nF nF nF C s s s s V s C K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003