Mar. 2003
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI HVIGBT MODULES
CM1600HB-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC................................................................ 1600A
●VCES ....................................................... 1700V
●Insulated Type
●1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
CM1600HB-34H
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
C
G
E
CC
EE
C
E
C
E
CM
E
C
G
20
114
130
16.5 2.5
18.5
18 61.5
14.5 11 35
5
30
140
5
38
28
31.5
4 - M8 NUTS
3 - M4 NUTS
124
±0.25
57
±0.25
57
±0.25
6 - φ 7 MOUNTING HOLES
LABEL
CIRCUIT DIAGRAM
Mar. 2003
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 850V, IC = 1600A, VGE = 15V
VCC = 850V, IC = 1600A
VGE1 = VGE2 = 15V
RG = 1.6Ω
Resistive load switching operation
IE = 1600A, VGE = 0V
IE = 1600A
die / dt = –3800A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
MITSUBISHI HVIGBT MODULES
CM1600HB-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
MAXIMUM RATINGS (Tj = 25°C)
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
VGE = 0V
VCE = 0V
DC, TC = 85°C
Pulse (Note 1)
Pulse (Note 1)
TC = 25°C, IGBT part —
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
Collector current
Emitter current
1700
±20
1600
3200
1600
3200
14700
–40 ~ +150
–40 ~ +125
4000
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
1.5
Symbol Item Conditions UnitRatings V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Tstg
Viso
—
—
V
V
Min Typ Max
24
0.5
—
—
—
—
—
—
1.60
2.00
2.70
0.80
—
2.70
—
0.0085
0.015
—
mA
µA
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
—
—
2.60
3.20
144
18.0
7.2
13.2
—
—
—
—
2.60
—
300
—
—
0.008
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
(Note 2)
trr
(Note 2)
Qrr
(Note 2)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
5.5
4.5
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T j) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.5
Thermal resistance
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Contact thermal resistance
IC = 160mA, VCE = 10V
IC = 1600A, VGE = 15V (Note 4)
VCE = 10V
VGE = 0V
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
