T4-LDS-0223, Rev. 1 (120178) ©2012 Microsemi Corporation Page 1 of 5
2N2857
Availa ble on
commercial
versions
RF and MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Qualified per MIL-PRF-19500/343
Qualified Levels:
JAN, JANTX,
and JANTXV
DESCRIPTION
The 2N2857 is a military qualified silicon NPN transistor (also available in commercial version),
designed for UHF equipment and other high-reliabil ity applications . Common applications
include low no ise am plif ier; os c illator, and m ixer applic atio ns . Microsemi also offers numerous
other products to meet higher and lower power voltage regulation applications.
TO-72 Package
Also available in:
UB Package
(surface mount)
2N2857UB
Important: For the latest information, vis it our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N2857.
• Silicon NPN, TO-72 packaged UH F transistor.
• Maximum unilateral gain = 13 dB (typ) @ 500 MHz.
• JAN, JANTX, and JANTXV military qualified versions available per MIL-PRF-19500/343.
• RoHS compliant version available (commercial grade only).
APPLICATIONS / BENEFITS
• Low-power, ultra-high frequency transistor.
• Leaded metal TO-72 package.
MAXIMUM RATINGS @ TA = +25 oC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ and TSTG
-65 to +200
oC
Collector-Emitter Voltage
VCEO
15
V
Collector-Base Voltage
VCBO
30
V
Emitter-Base Voltage
VEBO
3
V
Thermal Resi stan ce Jun cti on-to-Ambient
RӨJA
400
oC/W
Steady-State Power Dissipation (1)
PD
200
mW
Collector Current
IC
40
mA
Notes: 1. Derate linearly 1.14 mW/°C for TA > + 25 °C.
T4-LDS-0223, Rev. 1 (120178) ©2012 Microsemi Corporation Page 2 of 5
2N2857
MECHANICAL and PACKAGING
• CASE: Ni plated kovar, Ni cap.
• TERMINALS: Au over Ni plated kovar leads, solder dipped.
• MARKING: Manufacturer’s ID, date code, part number.
• POLARITY: See case outline on last page.
• WEIGHT: 0.322 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N2857 (e3)
JAN=JAN level
JANTX=JAN level
JANTXV=JANTXV level
Blank = Commercial
JEDEC type number
(See Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
IC
Collector current (dc).
IB
Base current (dc).
TA
Ambient or free air temper atu re.
TC
Case temperature.
VCB
Collector to base voltage (dc).
VEB
Emitter to base voltage (dc).
T4-LDS-0223, Rev. 1 (120178) ©2012 Microsemi Corporation Page 3 of 5
2N2857
ELECTRICAL CHARACTERISTICS @ TC = +25 oC
OFF CHARACTERISTICS
Test Conditions Symbol
Value
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
(IC = 3.0 mA, Bias condition D ) V(BR)CEO
15
-
-
V
Collector to Emitter Cutoff Current
(VCE = 16 V, Bias condit ion C) ICES
-
-
100
nA
Emitter to Base Cutoff Current
(VEB = 3 V, Bias condition D) IEBO
-
-
10
µA
Collector to Base Cutoff Current
(VCB = 15 V, B ias condition D) ICBO
-
-
10
nA
ON CHARACTERISTICS
Test Conditions Symbol
Value
Min.
Typ.
Max.
Unit
Forward Current transfer ratio
(IC = 3.0 mA, VCE = 1.0 V) hFE 30 - 150
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA) VCE(sat) - 0.4 V
Base-Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA) VBE(sat) - 1.0 V
DYNAMIC CHARACTERISTICS
Test Conditions
Symbol
Value
Unit
Min.
Typ.
Max.
Magnitude of comm on emit ter sma ll sig nal shor t
circuit forward current transfer ratio
(VCE = 6 V, Ic = 5 mA, f = 100 MHz) |hfe| 10 - 21
Collector-b ase time con stant
(IE = 2.0 mA, VCB = 6.0 V, f = 31.9 MHz) rb’Cc 4 - 15 pF
Collector to Base – feedback capacitance
(IE = 0 mA, VCB = 10 V, 100 kHz < f < 1 MH z) Ccb 1.0
pF
Noise Figure (50 Ohms)
(IC = 1.5 mA, VCE = 6 V, f = 450 MH z, Rg = 50 Ω) F
4.5
dB
Small Signal Power Gain (common emitter)
(IE = 1.5 mA, VCE = 6 V, f = 450 MHz Gpe 12.5 21
dB
T4-LDS-0223, Rev. 1 (120178) ©2012 Microsemi Corporation Page 4 of 5
2N2857
GRAPHS
Time (sec)
FIGURE 1
Maximum Thermal Impedance (RθJA)
TH(S)
FIGURE 2
Thermal impedance graph (RθJC)
Theta (oCW)
RθJC in Deg C/W
T4-LDS-0223, Rev. 1 (120178) ©2012 Microsemi Corporation Page 5 of 5
2N2857
PACKAGE DIMENSIONS
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch
(0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by the gauge and gauging procedure shown in figure 2.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in
L1 and beyond LL minimum.
8. All four leads .
9. Dimension r (radius) applies to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected).
Dimensions
Notes
Ltr
Inch
Millimeters
Min
Max
Min
Max
TL
.028
.048
.071
1.22
TH
.036
.046
.091
1.17
HD
.209
.230
5.31
5.84
5
CD
.178
.195
4.52
4.95
5
LD
.016
.021
.410
.533
7, 8
LC
.100 TP
2.54 TP
7, 8
CH
.170
.210
4.32
5.33
LL
.500
.750
12.70
19.05
7, 8
P
.100
2.54
Q
.040
1.02
5
1
Emitter
2
Base
3
Collector
4
Case