FQA46N15_NL - Fairchild Semiconductor

FQA46N15 / FQA46N15_F109 Rev. A1

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

August 2007

QFET®

FQA46N15 / FQA46N15_F109

150V N-Channel MOSFET

Features

• 50A, 150V, RDS(on) = 0.042Ω @VGS = 10 V

• Low gate charge ( typical 85 nC)

• Low Crss ( typical 100pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• 175°C maximum junction temperature rating

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies, active power factor

correction, electronic lamp ballast based on half bridge

topology.

Absolute Maximum Ratings

Thermal Characteristics

GSD

TO-3PN

FQA Series

Symbol Parameter FQA46N15 Units

VDSS Drain-Source Voltage 150 V

IDDrain Current - Continuous (TC = 25°C) 50 A

- Continuous (TC = 100°C) 35.3 A

IDM Drain Current - Pulsed (Note 1) 200 A

VGSS Gate-Source Voltage ± 25 V

EAS Single Pulsed Avalanche Energy (Note 2) 650 mJ

IAR Avalanche Current (Note 1) 50 A

EAR Repetitive Avalanche Energy (Note 1) 25 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

PDPower Dissipation (TC = 25°C) 250 W

- Derate above 25°C 1.67 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 0.6 °C/W

RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W

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FQA46N15 / FQA46N15_F109 Rev. A1

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

NOTES:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 0.43mH, IAS =50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 45.6A, di/dt ≤300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Device Marking Device Package Reel Size Tape Width Quantity

FQA46N15 FQA46N15 TO-3PN-- -- 30

FQA46N15 FQA46N15_F109 TO-3PN -- -- 30

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 150 -- -- V

∆BVDSS/

∆TJ

Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.16 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 150 V, VGS = 0 V -- -- 1 µA

VDS = 120 V, TC = 150°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA2.0--4.0V

RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 25A -- 0.033 0.042 Ω

gFS Forward Transconductance VDS = 40 V, ID = 25A (Note 4) -- 36 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 2500 3250 pF

Coss Output Capacitance -- 520 670 pF

Crss Reverse Transfer Capacitance -- 100 130 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 75 V, ID = 45.6A,

RG = 25 Ω

(Note 4, 5)

-- 35 80 ns

trTurn-On Rise Time -- 320 650 ns

td(off) Turn-Off Delay Time -- 210 430 ns

tfTurn-Off Fall Time -- 200 410 ns

QgTotal Gate Charge VDS = 120 V, ID = 45.6A,

VGS = 10 V

(Note 4, 5)

-- 85 110 nC

Qgs Gate-Source Charge -- 15 -- nC

Qgd Gate-Drain Charge -- 41 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 50 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =50A -- -- 1.5 V

trr Reverse Recovery Time VGS = 0 V, IS = 45.6 A,

dIF / dt = 100 A/µs (Note 4)

-- 130 -- ns

Qrr Reverse Recovery Charge -- 0.55 -- µC

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FQA46N15 / FQA46N15_F109 Rev. A1

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

246810

10-1

100

101

102

Notes :※

1. VDS = 40V

2. 250µ s Pulse Test

-55℃

175℃

25℃

ID , Drain Current [A]

VGS , Gate-Source Voltage [V]

10-1 100101

101

102

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

Notes :※

1. 250µ s Pulse Test

2. TC = 25℃

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

100

101

102

175℃

Notes :※

1. VGS = 0V

2. 250µ s Pulse Test

25℃

IDR, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0 40 80 120 160 200 240

0.00

0.05

0.10

0.15

0.20

Note : T※J = 25℃

VGS = 20V

VGS = 10V

RDS(on) [Ω],

Drain-Source On-Resistance

, Drain Current [A]

0 102030405060708090

VDS = 75V

VDS = 30V

VDS = 120V

Note : I※D = 45.6 A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10-1 100101

1000

2000

3000

4000

5000

6000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Notes :※

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

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FQA46N15 / FQA46N15_F109 Rev. A1

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Volt age Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :※

1. VGS = 10 V

2. ID = 22.8 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :※

1. VGS = 0 V

2. ID

= 250 µ A

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

25 50 75 100 125 150 175

ID, Drain Current [A]

TC, Case Temperature [ ]℃

100101102

10-1

100

101

102

103

10 µs

10 ms

1 ms

100 µs

Operation in This Area

is Limited by R DS(on)

Notes :※

1. TC = 25 oC

2. TJ = 175 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

Notes :※

1. Z θJC(t) = 0.6 /W M ax.℃

2. D u ty F a cto r, D =t1/t2

3. T JM - TC = PDM * ZθJC(t)

sin g le pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

PDM

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FQA46N15 / FQA46N15_F109 Rev. A1

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

6www.fairchildsemi.com

FQA46N15 / FQA46N15_F109 Rev. A1

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

7www.fairchildsemi.com

FQA46N15 / FQA46N15_F109 Rev. A1

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

Mechanical Dimensions

Dimensions in Millimeters

TO-3PN

9www.fairchildsemi.com

FQA46N15 / FQA46N15_F109 Rev. A1

FQA46N15 / FQA46N15_F109 150V N-Channel MOSFET

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and

is not intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF

THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE

UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF

FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE

PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to result

in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FPS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP-SPM™

Power220®

Power247®

POWEREDGE®

Power-SPM™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

UHC®

UniFET™

VCX™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Preliminary First Production

This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

Obsolete Not In Production

This datasheet contains specifications on a product that has been discontin-

ued by Fairchild semiconductor. The datasheet is printed for reference infor-

mation only.

Rev. I30