DS2431P-A1+T - Hytronics - Datasheet.Directory

General Description

The DS2431-A1 is an AEC-Q100 Grade 1 qualified ver-

sion of the DS2431. The logical behavior of both ver-

sions is identical. The DS2431-A1 is a 1024-bit, 1-Wire®

EEPROM chip organized as four memory pages of 256

bits each. Data is written to an 8-byte scratchpad, veri-

fied, and then copied to the EEPROM memory. As a

special feature, the four memory pages can individually

be write protected or put in EPROM-emulation mode,

where bits can only be changed from a 1 to a 0 state.

The DS2431-A1 communicates over the single-conduc-

tor 1-Wire bus. The communication follows the standard

1-Wire protocol. Each device has its own unalterable

and unique 64-bit ROM registration number that is fac-

tory lasered into the chip. The registration number is

used to address the device in a multidrop 1-Wire net

environment.

Applications

Automotive Sensor Identification and Calibration

Data Storage

Automotive Cable Assembly Identification

Accessory/PCB Identification

Features

♦1024 Bits of EEPROM Memory Partitioned Into

Four Pages of 256 Bits

♦Individual Memory Pages Can Be Permanently

Write Protected or Put in EPROM-Emulation Mode

(“Write to 0”)

♦Switchpoint Hysteresis and Filtering to Optimize

Performance in the Presence of Noise

♦IEC 1000-4-2 Level 4 ESD Protection (+8kV

Contact, +15kV Air, Typ)

♦Reads and Writes Over a 4.5V to 5.25V Voltage

Range from -40°C to +125°C

♦Communicates to Host with a Single Digital

Signal at 15.4kbps Using 1-Wire Protocol

♦Meets AEC-Q100 Grade 1 Qualification

Requirements

♦Also Available as Standard Version for Industrial

Temperature Range (DS2431)

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

________________________________________________________________

Maxim Integrated Products

N.C.

I/O

GND

N.C.

TSOC

TOP VIEW

DS2431-A1

Pin Configuration

Ordering Information

DS2431-A1

I/O

RPUP

VCC

μC

GND

Typical Operating Circuit

Rev 1; 3/08

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,

or visit Maxim’s website at www.maxim-ic.com.

Denotes a lead(Pb)-free/RoHS-compliant package.

T = Tape and reel.

PART TEMP RANGE PIN-PACKAGE

DS2431P-A1+ -40°C to +125°C 6 TSOC

DS2431P-A1+T -40°C to +125°C 6 TSOC

Commands and modes are capitalized for clarity.

1-Wire is a registered trademark of Maxim Integrated Products, Inc.

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(TA= -40°C to +125°C) (Note 1)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional

operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to

absolute maximum rating conditions for extended periods may affect device reliability.

I/O Voltage to GND .....................................................-0.5V, +6V

I/O Sink Current ..................................................................20mA

Operating Temperature Range .........................-40°C to +125°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-55°C to +125°C

Soldering Temperature .....................See IPC/JEDEC J-STD-020

specification.

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

I/O PIN GENERAL DATA

1-Wire Pullup Voltage VPUP (Note 2) 4.5 5.25 V

1-Wire Pullup Resistance RPUP (Notes 2, 3) 0.3 2.2 k

Input Capacitance CIO (Notes 4, 5) 1000 pF

Input Load Current ILI/O pin at VPUP 0.05 10 μA

High-to-Low Switching Threshold VTL (Notes 5, 6, 7) 0.5 VPUP -

1.8 V

Input Low Voltage VIL (Notes 2, 8) 0.5 V

Low-to-High Switching Threshold VTH (Notes 5, 6, 9) 1.0 VPUP -

1.0 V

Switching Hysteresis VHY (Notes 5, 6, 10) 0.21 1.70 V

Output Low Voltage VOL At 4mA (Note 11) 0.4 V

Recovery Time tREC RPUP = 2.2k (Notes 2, 12) 5 μs

Rising-Edge Hold-Off Time tREH (Notes 5, 13) 0.5 5.0 μs

Time Slot Duration tSLOT (Notes 2, 14) 65 μs

I/O PIN, 1-Wire RESET, PRESENCE-DETECT CYCLE

Reset Low Time tRSTL (Note 2) 480 640 μs

Presence-Detect High Time tPDH 15 60 μs

Presence-Detect Low Time tPDL 60 240 μs

Presence-Detect Sample Time tMSP (Notes 2, 15) 60 75 μs

I/O PIN, 1-Wire WRITE

Write-0 Low Time tW0L (Notes 2, 16) 60 120 μs

Write-1 Low Time tW1L (Notes 2, 16) 1 15 μs

I/O PIN, 1-Wire READ

Read Low Time tRL (Notes 2, 17) 5 15 -  μs

Read Sample Time tMSR (Notes 2, 17) tRL +  15 μs

EEPROM

Programming Current IPROG (Notes 5, 18) 0.8 mA

Programming Time tPROG (Note 19) 10 ms

At +25°C 200k

At +85°C 50k

Write/Erase Cycles (Endurance)

(Notes 20, 21) NCY

At +125°C 1k



Data Retention

(Notes 22, 23, 24) tDR At +125°C (worst case) 10 Years

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

_______________________________________________________________________________________ 3

Note 1: Specifications at TA= -40°C are guaranteed by design only and not production tested.

Note 2: System requirement.

Note 3: Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system and 1-Wire recovery times.

The specified value here applies to systems with only one device and with the minimum 1-Wire recovery times. For more

heavily loaded systems, an active pullup such as that found in the DS2482-x00, DS2480B, or DS2490 may be required.

Note 4: Maximum value represents the internal parasite capacitance when VPUP is first applied. If a 2.2kΩresistor is used to pull

up the data line, 2.5µs after VPUP has been applied, the parasite capacitance does not affect normal communications.

Note 5: Guaranteed by design, characterization, and/or simulation only. Not production tested.

Note 6: VTL, VTH, and VHY are a function of the internal supply voltage, which is a function of VPUP, RPUP, 1-Wire timing, and

capacitive loading on I/O. Lower VPUP, higher RPUP, shorter tREC, and heavier capacitive loading all lead to lower values

of VTL, VTH, and VHY.

Note 7: Voltage below which, during a falling edge on I/O, a logic 0 is detected.

Note 8: The voltage on I/O needs to be less than or equal to VILMAX at all times the master is driving I/O to a logic-0 level.

Note 9: Voltage above which, during a rising edge on I/O, a logic 1 is detected.

Note 10: After VTH is crossed during a rising edge on I/O, the voltage on I/O must drop by at least VHY to be detected as logic 0.

Note 11: The I-V characteristic is linear for voltages less than 1V.

Note 12: Applies to a single device attached to a 1-Wire line.

Note 13: The earliest recognition of a negative edge is possible at tREH after VTH has been reached on the preceding rising edge.

Note 14: Defines maximum possible bit rate. Equal to tW0LMIN + tRECMIN.

Note 15: Interval after tRSTL during which a bus master is guaranteed to sample a logic 0 on I/O if there is a DS2431-A1 present.

Minimum limit is tPDHMAX; maximum limit is tPDHMIN + tPDLMIN.

Note 16: εin Figure 11 represents the time required for the pullup circuitry to pull the voltage on I/O up from VIL to VTH. The actual

maximum duration for the master to pull the line low is tW1LMAX + tF- εand tW0LMAX + tF- ε, respectively.

Note 17: δin Figure 11 represents the time required for the pullup circuitry to pull the voltage on I/O up from VIL to the input-high

threshold of the bus master. The actual maximum duration for the master to pull the line low is tRLMAX + tF.

Note 18: Current drawn from I/O during the EEPROM programming interval. The pullup circuit on I/O during the programming inter-

val should be such that the voltage at I/O is greater than or equal to VPUPMIN. If VPUP in the system is close to VPUPMIN, a

low-impedance bypass of RPUP, which can be activated during programming, may need to be added.

Note 19: Interval begins tREHMAX after the trailing rising edge on I/O for the last time slot of the E/S byte for a valid Copy

Scratchpad sequence. Interval ends once the device’s self-timed EEPROM programming cycle is complete and the cur-

rent drawn by the device has returned from IPROG to IL.

Note 20: Write-cycle endurance is degraded as TAincreases.

Note 21: Not 100% production tested; guaranteed by reliability monitor sampling.

Note 22: Data retention is degraded as TAincreases.

Note 23: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to the

data sheet limit at operating temperature range is established by reliability testing.

Note 24: EEPROM writes can become nonfunctional after the data-retention time is exceeded. Long-term storage at elevated tem-

peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C.

DS2431-A1

Detailed Description

The DS2431-A1 combines 1024 bits of EEPROM, an

8-byte register/control page with up to seven user

read/write bytes, and a fully featured 1-Wire interface in

a single chip. Each DS2431-A1 has its own 64-bit ROM

registration number that is factory lasered into the chip

to provide a guaranteed unique identity for absolute

traceability. Data is transferred serially through the

1-Wire protocol, which requires only a single data lead

and a ground return. The DS2431-A1 has an additional

memory area called the scratchpad that acts as a

buffer when writing to the main memory or the register

page. Data is first written to the scratchpad from which

it can be read back. After the data has been verified, a

Copy Scratchpad command transfers the data to its

final memory location. The DS2431-A1 applications

include sensor, cable, accessory, or PCB identification

in environments that demand automotive AEC-Q100

Grade 1 reliability.

Overview

The block diagram in Figure 1 shows the relationships

between the major control and memory sections of the

DS2431-A1. The DS2431-A1 has four main data com-

ponents: 64-bit lasered ROM, 64-bit scratchpad, four

32-byte pages of EEPROM, and 64-bit register page.

1024-Bit, 1-Wire EEPROM

for Automotive Applications

4 _______________________________________________________________________________________

Pin Description

PIN NAME FUNCTION

1 GND Ground Reference

2 I/O 1-Wire Bus Interface. Open drain, requires external pullup resistor.

3–6 N.C. No Connection

DS2431-A1

MEMORY

FUNCTION

CONTROL UNIT

DATA MEMORY

4 PAGES OF

256 BITS EACH

CRC-16

GENERATOR

64-BIT

SCRATCHPAD

1-Wire

FUNCTION CONTROL

64-BIT

LASERED ROM

PARASITE POWER

I/O

64 BITS

Figure 1. Block Diagram

The hierarchical structure of the 1-Wire protocol is

shown in Figure 2. The bus master must first provide

one of the five ROM function commands: Read ROM,

Match ROM, Search ROM, Skip ROM, and Resume.

The protocol required for these ROM function com-

mands is described in Figure 9. After a ROM function

command is successfully executed, the memory func-

tions become accessible and the master can provide

any one of the four memory function commands. The

protocol for these memory function commands is

described in Figure 7. All data is read and written

least significant bit first.

64-Bit Lasered ROM

Each DS2431-A1 contains a unique ROM code that is 64

bits long. The first 8 bits are a 1-Wire family code. The

next 48 bits are a unique serial number. The last 8 bits

are a CRC (cyclic redundancy check) of the first 56 bits.

See Figure 3 for details. The 1-Wire CRC is generated

using a polynomial generator consisting of a shift regis-

ter and XOR gates as shown in Figure 4. The polynomial

is X8+ X5+ X4+ 1. Additional information about the

1-Wire CRC is available in

Application Note 27

The shift register bits are initialized to 0. Then, starting

with the least significant bit of the family code, one bit

at a time is shifted in. After the 8th bit of the family code

has been entered, the serial number is entered. After

the last bit of the serial number has been entered, the

shift register contains the CRC value. Shifting in the 8

bits of the CRC returns the shift register to all 0s.

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

_______________________________________________________________________________________ 5

DS2431-A1 COMMAND LEVEL:

AVAILABLE COMMANDS: DATA FIELD AFFECTED:

READ ROM

MATCH ROM

SEARCH ROM

SKIP ROM

RESUME

64-BIT REG. #, RC-FLAG

RC-FLAG

1-Wire ROM FUNCTION COMMANDS

(SEE FIGURE 9)

WRITE SCRATCHPAD

READ SCRATCHPAD

COPY SCRATCHPAD

READ MEMORY

64-BIT SCRATCHPAD, FLAGS

64-BIT SCRATCHPAD

DATA MEMORY, REGISTER PAGE

DS2431-A1-SPECIFIC

MEMORY FUNCTION COMMANDS

(SEE FIGURE 7)

Figure 2. Hierarchical Structure for 1-Wire Protocol

MSB LSB

8-BIT

CRC CODE 48-BIT SERIAL NUMBER 8-BIT FAMILY CODE

(2Dh)

MSB LSB MSB LSB MSB LSB

Figure 3. 64-Bit Lasered ROM

DS2431-A1

Memory

Data memory and registers are located in a linear

address space, as shown in Figure 5. The data memory

and the registers have unrestricted read access. The

DS2431-A1 EEPROM array consists of 18 rows of 8

bytes each. The first 16 rows are divided equally into

four memory pages (32 bytes each). These four pages

are the primary data memory. Each page can be indi-

vidually set to open (unprotected), write protected, or

EPROM mode by setting the associated protection byte

in the register row. The last two rows contain protection

registers and reserved bytes. The register row consists

of four protection control bytes, a copy protection byte,

the factory byte, and two user byte/manufacture ID

bytes. The manufacturer ID can be a customer-sup-

plied identification code that assists the application

software in identifying the product the DS2431-A1 is

associated with. Contact the factory to set up and reg-

1024-Bit, 1-Wire EEPROM

for Automotive Applications

6 _______________________________________________________________________________________

1ST

STAGE

2ND

STAGE

3RD

STAGE

4TH

STAGE

7TH

STAGE

8TH

STAGE

6TH

STAGE

5TH

STAGE

X0X1X2X3X4

POLYNOMIAL = X8 + X5 + X4 + 1

INPUT DATA

X5X6X7X8

Figure 4. 1-Wire CRC Generator

ADDRESS RANGE TYPE DESCRIPTION PROTECTION CODES

0000h to 001Fh R/(W) Data Memory Page 0 —

0020h to 003Fh R/(W) Data Memory Page 1 —

0040h to 005Fh R/(W) Data Memory Page 2 —

0060h to 007Fh R/(W) Data Memory Page 3 —

0080h* R/(W) Protection Control Byte Page 0 55h: Write Protect P0; AAh: EPROM Mode P0; 55h

or AAh: Write Protect 80h

0081h* R/(W) Protection Control Byte Page 1 55h: Write Protect P1; AAh: EPROM Mode P1; 55h

or AAh: Write Protect 81h

0082h* R/(W) Protection Control Byte Page 2 55h: Write Protect P2; AAh: EPROM Mode P2; 55h

or AAh: Write Protect 82h

0083h* R/(W) Protection Control Byte Page 3 55h: Write Protect P3; AAh: EPROM Mode P3; 55h

or AAh: Write Protect 83h

0084h* R/(W) Copy Protection Byte 55h or AAh: Copy Protect 0080:008Fh, and Any

Write-Protected Pages

0085h R Factory Byte. Set at Factory. AAh: Write Protect 85h, 86h, 87h;

55h: Write Protect 85h, Unprotect 86h, 87h

0086h R/(W) User Byte/Manufacturer ID —

0087h R/(W) User Byte/Manufacturer ID —

0088h to 008Fh N/A Reserved —

Figure 5. Memory Map

*Once programmed to AAh or 55h this address becomes read-only. All other codes can be stored, but neither write protect the

address nor activate any function.

ister a custom manufacturer ID. The last row is

reserved for future use. It is undefined in terms of R/W

functionality and should not be used.

In addition to the main EEPROM array, an 8-byte

volatile scratchpad is included. Writes to the EEPROM

array are a two-step process. First, data is written to the

scratchpad and then copied into the main array. This

allows the user to first verify the data written to the

scratchpad prior to copying into the main array. The

device only supports full row (8-byte) copy operations.

For data in the scratchpad to be valid for a copy opera-

tion, the address supplied with a Write Scratchpad

must start on a row boundary, and 8 full bytes must be

written into the scratchpad.

The protection control registers determine how incom-

ing data on a Write Scratchpad command is loaded

into the scratchpad. A protection setting of 55h (write

protect) causes the incoming data to be ignored and

the target address main memory data to be loaded into

the scratchpad. A protection setting of AAh (EPROM

mode) causes the logical AND of incoming data and

target address main memory data to be loaded into the

scratchpad. Any other protection control register set-

ting leaves the associated memory page open for unre-

stricted write access. Protection control byte settings of

55h or AAh also write protect the protection control

byte. The protection control byte setting of 55h does

not block the copy. This allows write-protected data to

be refreshed (i.e., reprogrammed with the current data)

in the device.

The copy protection byte is used for a higher level of

security, and should only be used after all other protec-

tion control bytes, user bytes, and write-protected

pages are set to their final value. If the copy protection

byte is set to 55h or AAh, all copy attempts to the regis-

ter row and user byte row are blocked. In addition, all

copy attempts to write-protected main memory pages

(i.e., refresh) are blocked.

Address Registers and Transfer Status

The DS2431-A1 employs three address registers: TA1,

TA2, and E/S (Figure 6). These registers are common to

many other 1-Wire devices but operate slightly different-

ly with the DS2431-A1. Registers TA1 and TA2 must be

loaded with the target address to which the data is writ-

ten or from which data is read. Register E/S is a read-

only transfer-status register used to verify data integrity

with write commands. E/S bits E2:E0 are loaded with the

incoming T2:T0 on a Write Scratchpad command and

increment on each subsequent data byte. This is, in

effect, a byte-ending offset counter within the 8-byte

scratchpad. Bit 5 of the E/S register, called PF, is a logic

1 if the data in the scratchpad is not valid due to a loss

of power or if the master sends less bytes than needed

to reach the end of the scratchpad. For a valid write to

the scratchpad, T2:T0 must be 0 and the master must

have sent 8 data bytes. Bits 3, 4, and 6 have no func-

tion; they always read 0. The highest valued bit of the

E/S register, called AA or authorization accepted, acts

as a flag to indicate that the data stored in the scratch-

pad has already been copied to the target memory

address. Writing data to the scratchpad clears this flag.

Writing with Verification

To write data to the DS2431-A1, the scratchpad must

be used as intermediate storage. First, the master

issues the Write Scratchpad command to specify the

desired target address, followed by the data to be writ-

ten to the scratchpad. Note that Copy Scratchpad com-

mands must be performed on 8-byte boundaries, i.e.,

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

_______________________________________________________________________________________ 7

Bit # 7 6 5 4 3 2 1 0

Target Address (TA1) T7 T6 T5 T4 T3 T2 T1 T0

Target Address (TA2) T15 T14 T13 T12 T11 T10 T9 T8

Ending Address with

Data Status (E/S)

(Read Only)

AA 0 PF 0 0 E2 E1 E0

Figure 6. Address Registers

DS2431-A1

the three LSBs of the target address (T2, T1, T0) must

be equal to 000b. If T2:T0 are sent with nonzero values,

the copy function is blocked. Under certain conditions

(see the

Write Scratchpad [0Fh]

section) the master

receives an inverted CRC-16 of the command, address

(actual address sent), and data at the end of the Write

Scratchpad command sequence. Knowing this CRC

value, the master can compare it to the value it has cal-

culated to decide if the communication was successful

and proceed to the Copy Scratchpad command. If the

master could not receive the CRC-16, it should send

the Read Scratchpad command to verify data integrity.

As a preamble to the scratchpad data, the DS2431-A1

repeats the target address TA1 and TA2 and sends the

contents of the E/S register. If the PF flag is set, data

did not arrive correctly in the scratchpad or there was a

loss of power since data was last written to the scratch-

pad. The master does not need to continue reading; it

can start a new trial to write data to the scratchpad.

Similarly, a set AA flag together with a cleared PF flag

indicates that the device did not recognize the Write

command. If everything went correctly, both flags are

cleared. Now the master can continue reading and ver-

ifying every data byte. After the master has verified the

data, it can send the Copy Scratchpad command, for

example. This command must be followed exactly by

the data of the three address registers, TA1, TA2, and

E/S. The master should obtain the contents of these

registers by reading the scratchpad.

Memory Function Commands

The

Memory Function Flow Chart

(Figure 7) describes

the protocols necessary for accessing the memory of

the DS2431-A1. An example on how to use these func-

tions to write to and read from the device is included at

the end of this document.

Write Scratchpad [0Fh]

The Write Scratchpad command applies to the data

memory and the writable addresses in the register

page. In order for the scratchpad data to be valid for

copying to the array, the user must perform a Write

Scratchpad command of 8 bytes starting at a valid row

boundary. The Write Scratchpad command accepts

invalid addresses and partial rows, but subsequent

Copy Scratchpad commands are blocked.

After issuing the Write Scratchpad command, the mas-

ter must first provide the 2-byte target address, fol-

lowed by the data to be written to the scratchpad. The

data is written to the scratchpad starting at the byte off-

set of T2:T0. The E/S bits E2:E0 are loaded with the

starting byte offset, and increment with each subse-

quent byte. Effectively, E2:E0 is the byte offset of the

last full byte written to the scratchpad. Only full data

bytes are accepted.

When executing the Write Scratchpad command, the

CRC generator inside the DS2431-A1 (Figure 13) cal-

culates a CRC of the entire data stream, starting at the

command code and ending at the last data byte as

sent by the master. This CRC is generated using the

CRC-16 polynomial by first clearing the CRC generator

and then shifting in the command code (0Fh) of the

Write Scratchpad command, the target addresses (TA1

and TA2), and all the data bytes. Note that the CRC-16

calculation is performed with the actual TA1 and TA2

and data sent by the master. The master can end the

Write Scratchpad command at any time. However, if

the end of the scratchpad is reached (E2:E0 = 111b),

the master can send 16 read-time slots and receive the

CRC generated by the DS2431-A1.

If a Write Scratchpad is attempted to a write-protected

location, the scratchpad is loaded with the data already

in memory, rather than the data transmitted. Similarly, if

the target address page is in EPROM mode, the

scratchpad is loaded with the bitwise logical AND of

the transmitted data and data already in memory.

1024-Bit, 1-Wire EEPROM

for Automotive Applications

8 _______________________________________________________________________________________

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

_______________________________________________________________________________________ 9

BUS MASTER Tx MEMORY

FUNCTION COMMAND

BUS MASTER Tx

TA1 (T7:T0), TA2 (T15:T8)

BUS MASTER Rx

TA1 (T7:T0), TA2 (T15:T8),

AND E/S BYTE

BUS MASTER Rx

DATA BYTE FROM

SCRATCHPAD

MASTER Tx DATA BYTE

TO SCRATCHPAD APPLIES ONLY

IF THE MEMORY

AREA IS NOT

PROTECTED.

IF WRITE PROTECTED,

THE DS2431-A1

COPIES THE DATE

BYTE FROM THE

TARGET ADDRESS

INTO THE SP.

IF IN EPROM MODE,

THE DS2431-A1

LOADS THE BITWISE

LOGICAL AND,

THE TRANSMITTED

BYTE, AND THE

DATA BYTE FROM

THE TARGETED

ADDRESS INTO

THE SP.

BUS MASTER

Rx "1"s

DS2431-A1

INCREMENTS

E2:E0

PF = 0

DS2431-A1 SETS

SETS PF = 1

CLEARS AA = 0

SETS E2:E0 = T2:T0

0Fh

WRITE SCRATCHPAD? N

MASTER Tx RESET?

E2:E0 = 7?

T2:T0 = 0?

MASTER Tx RESET?

DS2431-A1 SETS

SCRATCHPAD

BYTE COUNTER = T2:T0

AAh

READ SCRATCHPAD? N

DS2431-A1 Tx CRC-16 OF

COMMAND, ADDRESS,

DATA BYTES AS THEY

WERE SENT BY THE BUS

MASTER

BUS MASTER

Rx "1"s

NMASTER Tx RESET?

BUS MASTER Rx CRC-16

OF COMMAND, ADDRESS,

E/S BYTE, DATA BYTES

AS SENT BY THE DS2431-A1

MASTER Tx RESET?

BYTE COUNTER

= E2:E0?

FROM ROM FUNCTIONS

FLOW CHART (FIGURE 9)

TO ROM FUNCTIONS

FLOW CHART (FIGURE 9)

DS2431-A1

INCREMENTS

BYTE COUNTER

TO FIGURE 7

2ND PART

TO FIGURE 7

2ND PART

Figure 7. Memory Function Flow Chart

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

10 ______________________________________________________________________________________

BUS MASTER Tx

TA1 (T7:T0), TA2 (T15:T8)

APPLICABLE TO ALL R/W

MEMORY LOCATIONS.

DURATION: tPROG *

* 1-Wire IDLE HIGH FOR POWER

DS2431-A1 COPIES

SCRATCHPAD

DATA TO ADDRESS

BUS MASTER

Rx "1"s

AA = 1

BUS MASTER

Rx "1"s

MASTER Tx RESET? NY

MASTER Tx RESET?

BUS MASTER Tx

TA1 (T7:T0), TA2 (T15:T8)

AND E/S BYTE

55h

COPY SCRATCHPAD? N

DS2431 Tx "0"

DS2431 Tx "1"

F0h

READ MEMORY? N

AUTH. CODE

MATCH?

T15:T0 < 0090h?

PF = 0?

ADDRESS < 90h?

YCOPY PROTECTED?

BUS MASTER

Rx "1"s

MASTER Tx RESET?

DS2431-A1 SETS MEMORY

ADDRESS = (T15:T0)

BUS MASTER Rx

DATA BYTE FROM

MEMORY ADDRESS

MASTER Tx RESET?

ADDRESS < 8Fh?

MASTER Tx RESET?

DS2431-A1

INCREMENTS

ADDRESS

COUNTER

FROM FIGURE 7

1ST PART

FROM FIGURE 7

1ST PART

Figure 7. Memory Function Flow Chart (continued)

Read Scratchpad [AAh]

The Read Scratchpad command allows verifying the

target address and the integrity of the scratchpad data.

After issuing the command code, the master begins

reading. The first two bytes are the target address. The

next byte is the ending offset/data status byte (E/S) fol-

lowed by the scratchpad data, which may be different

from what the master originally sent. This is of particular

importance if the target address is within the register

page or a page in either Write Protection or EPROM

modes. See the

Write Scratchpad [0Fh]

section for

details. The master should read through the scratchpad

(E2:E0 - T2:T0 + 1 bytes), after which it receives the

inverted CRC, based on data as it was sent by the

DS2431-A1. If the master continues reading after the

CRC, all data are logic 1s.

Copy Scratchpad [55h]

The Copy Scratchpad command is used to copy data

from the scratchpad to writable memory sections. After

issuing the Copy Scratchpad command, the master

must provide a 3-byte authorization pattern, which

should have been obtained by an immediately preced-

ing Read Scratchpad command. This 3-byte pattern

must exactly match the data contained in the three

address registers (TA1, TA2, E/S, in that order). If the

pattern matches, the target address is valid, the PF flag

is not set, and the target memory is not copy protected,

then the AA (authorization accepted) flag is set and the

copy begins. All eight bytes of scratchpad contents are

copied to the target memory location. The duration of

the device’s internal data transfer is tPROG during

which the voltage on the 1-Wire bus must not fall below

2.8V. A pattern of alternating 0s and 1s are transmitted

after the data has been copied until the master issues a

reset pulse. If the PF flag is set or the target memory is

copy protected, the copy does not begin and the AA

flag is not set.

Read Memory [F0h]

The Read Memory command is the general function to

read data from the DS2431-A1. After issuing the com-

mand, the master must provide the 2-byte target

address. After these two bytes, the master reads data

beginning from the target address and may continue

until address 008Fh. If the master continues reading,

the result is logic 1s. The device’s internal TA1, TA2,

E/S, and scratchpad contents are not affected by a

Read Memory command.

1-Wire Bus System

The 1-Wire bus is a system that has a single bus mas-

ter and one or more slaves. In all instances the

DS2431-A1 is a slave device. The bus master is typical-

ly a microcontroller. The discussion of this bus system

is broken down into three topics: hardware configura-

tion, transaction sequence, and 1-Wire signaling (signal

types and timing). The 1-Wire protocol defines bus

transactions in terms of the bus state during specific

time slots, which are initiated on the falling edge of

sync pulses from the bus master.

Hardware Configuration

The 1-Wire bus has only a single line by definition; it is

important that each device on the bus be able to drive

it at the appropriate time. To facilitate this, each device

attached to the 1-Wire bus must have open-drain or

three-state outputs. The 1-Wire port of the DS2431-A1

is open drain with an internal circuit equivalent to that

shown in Figure 8.

A multidrop bus consists of a 1-Wire bus with multiple

slaves attached. The DS2431-A1 communicates at a

maximum data rate of 15.4kbps. Note that legacy

1-Wire products support a standard communication

speed of 16.3kbps. The slightly reduced rates for the

DS2431-A1 are a result of additional recovery times,

which in turn were driven by a 1-Wire physical interface

enhancement to improve noise immunity. The value of

the pullup resistor primarily depends on the network

size and load conditions. The DS2431-A1 requires a

pullup resistor of 2.2kΩ(max).

The idle state for the 1-Wire bus is high. If for any rea-

son a transaction needs to be suspended, the bus

MUST be left in the idle state if the transaction is to

resume. If this does not occur and the bus is left low for

more than 120µs, one or more devices on the bus

might be reset.

Transaction Sequence

The protocol for accessing the DS2431-A1 through the

1-Wire port is as follows:

• Initialization

• ROM Function Command

• Memory Function Command

• Transaction/Data

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

______________________________________________________________________________________ 11

DS2431-A1

Initialization

All transactions on the 1-Wire bus begin with an initial-

ization sequence. The initialization sequence consists

of a reset pulse transmitted by the bus master followed

by presence pulse(s) transmitted by the slave(s). The

presence pulse lets the bus master know that the

DS2431-A1 is on the bus and is ready to operate. For

more details, see the

1-Wire Signaling

section.

1-Wire ROM Function

Commands

Once the bus master has detected a presence, it can

issue one of the five ROM function commands that the

DS2431-A1 supports. All ROM function commands are

8 bits long. A list of these commands follows (see the

flow chart in Figure 9).

Read ROM [33h]

The Read ROM command allows the bus master to read

the DS2431-A1’s 8-bit family code, unique 48-bit serial

number, and 8-bit CRC. This command can only be used

if there is a single slave on the bus. If more than one

slave is present on the bus, a data collision occurs when

all slaves try to transmit at the same time (open drain pro-

duces a wired-AND result). The resultant family code and

48-bit serial number result in a mismatch of the CRC.

Match ROM [55h]

The Match ROM command, followed by a 64-bit ROM

sequence, allows the bus master to address a specific

DS2431-A1 on a multidrop bus. Only the DS2431-A1 that

exactly matches the 64-bit ROM sequence responds to

the following memory function command. All other slaves

wait for a reset pulse. This command can be used with a

single or multiple devices on the bus.

Search ROM [F0h]

When a system is initially brought up, the bus master

might not know the number of devices on the 1-Wire

bus or their registration numbers. By taking advantage

of the wired-AND property of the bus, the master can

use a process of elimination to identify the registration

numbers of all slave devices. For each bit of the regis-

tration number, starting with the least significant bit, the

bus master issues a triplet of time slots. On the first slot,

each slave device participating in the search outputs

the true value of its registration number bit. On the sec-

ond slot, each slave device participating in the search

outputs the complemented value of its registration num-

ber bit. On the third slot, the master writes the true

value of the bit to be selected. All slave devices that do

not match the bit written by the master stop participat-

ing in the search. If both of the read bits are zero, the

master knows that slave devices exist with both states

of the bit. By choosing which state to write, the bus

master branches in the romcode tree. After one com-

plete pass, the bus master knows the registration num-

ber of a single device. Additional passes identify the

registration numbers of the remaining devices. Refer to

Application Note 187: 1-Wire Search Algorithm

for a

detailed discussion, including an example.

Skip ROM [CCh]

This command can save time in a single-drop bus sys-

tem by allowing the bus master to access the memory

functions without providing the 64-bit ROM code. If

more than one slave is present on the bus and, for

example, a Read command is issued following the Skip

ROM command, data collision occurs on the bus as

multiple slaves transmit simultaneously (open-drain

pulldowns produce a wired-AND result).

1024-Bit, 1-Wire EEPROM

for Automotive Applications

12 ______________________________________________________________________________________

RPUP

VPUP

BUS MASTER

OPEN-DRAIN

PORT PIN 100Ω MOSFET

DATA

DS2431-A1 1-Wire PORT

Rx = RECEIVE

Tx = TRANSMIT

Figure 8. Hardware Configuration

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

______________________________________________________________________________________ 13

DS2431-A1 Tx

PRESENCE PULSE

BUS MASTER Tx

RESET PULSE

BUS MASTER Tx ROM

FUNCTION COMMAND

DS2431-A1 Tx

CRC BYTE

DS2431-A1 Tx

FAMILY CODE

(1 BYTE)

DS2431-A1 Tx

SERIAL NUMBER

(6 BYTES)

RC = 0

MASTER Tx BIT 0

RC = 0 RC = 0 RC = 0

YYY

33h

READ ROM

COMMAND?

N55h

MATCH ROM

COMMAND?

BIT 0 MATCH? BIT 0 MATCH?

N N

F0h

SEARCH ROM

COMMAND?

NCCh

SKIP ROM

COMMAND?

RC = 1

MASTER Tx BIT 1

MASTER Tx BIT 63

BIT 1 MATCH?

BIT 63 MATCH?

RC = 1

FROM MEMORY FUNCTIONS

FLOW CHART (FIGURE 7)

TO MEMORY FUNCTIONS

FLOW CHART (FIGURE 7)

DS2431-A1 Tx BIT 0

MASTER Tx BIT 0

BIT 1 MATCH?

BIT 63 MATCH?

DS2431-A1 Tx BIT 1

MASTER Tx BIT 1

DS2431-A1 Tx BIT 63

MASTER Tx BIT 63

RC = 1?

A5h

RESUME

COMMAND?

MASTER Tx

RESET?

Figure 9. ROM Functions Flow Chart

Resume [A5h]

To maximize the data throughput in a multidrop envi-

ronment, the Resume function is available. This function

checks the status of the RC bit and, if it is set, directly

transfers control to the Memory functions, similar to a

Skip ROM command. The only way to set the RC bit is

through successfully executing the Match ROM or

Search ROM command. Once the RC bit is set, the

device can repeatedly be accessed through the

Resume command function. Accessing another device

on the bus clears the RC bit, preventing two or more

devices from simultaneously responding to the Resume

command function.

1-Wire Signaling

The DS2431-A1 requires strict protocols to ensure data

integrity. The protocol consists of four types of signal-

ing on one line: reset sequence with reset pulse and

presence pulse, write-zero, write-one, and read-data.

Except for the presence pulse, the bus master initiates

all falling edges.

To get from idle to active, the voltage on the 1-Wire line

needs to fall from VPUP below the threshold VTL. To get

from active to idle, the voltage needs to rise from

VILMAX past the threshold VTH. The time it takes for the

voltage to make this rise is seen in Figure 10 as ε, and

its duration depends on the pullup resistor (RPUP) used

and the capacitance of the 1-Wire network attached.

The voltage VILMAX is relevant for the DS2431-A1 when

determining a logical level, not triggering any events.

Figure 10 shows the initialization sequence required to

begin any communication with the DS2431-A1. A reset

pulse followed by a presence pulse indicates that the

DS2431-A1 is ready to receive data, given the correct

ROM and memory function command. If the bus master

uses slew-rate control on the falling edge, it must pull

down the line for tRSTL + tFto compensate for the edge.

After the bus master has released the line it goes into

receive mode. Now the 1-Wire bus is pulled to VPUP

through the pullup resistor, or in the case of a DS2482-

x00 or DS2480B driver, through the active circuitry.

When the threshold VTH is crossed, the DS2431-A1

waits for tPDH and then transmits a presence pulse by

pulling the line low for tPDL. To detect a presence

pulse, the master must test the logical state of the

1-Wire line at tMSP.

The tRSTH window must be at least the sum of

tPDHMAX, tPDLMAX, and tRECMIN. Immediately after

tRSTH is expired, the DS2431-A1 is ready for data com-

munication. In a mixed population network, tRSTH

should be extended to minimum 480µs to accommo-

date other 1-Wire devices.

Read-/Write-Time Slots

Data communication with the DS2431-A1 takes place in

time slots, which carry a single bit each. Write-time slots

transport data from bus master to slave. Read-time slots

transfer data from slave to master. Figure 11 illustrates

the definitions of the write- and read-time slots.

All communication begins with the master pulling the

data line low. As the voltage on the 1-Wire line falls

below the threshold VTL, the DS2431-A1 starts its inter-

nal timing generator that determines when the data line

is sampled during a write-time slot and how long data

is valid during a read-time slot.

Master-to-Slave

For a write-one time slot, the voltage on the data line

must have crossed the VTH threshold before the write-

one low time tW1LMAX is expired. For a write-zero time

slot, the voltage on the data line must stay below the

VTH threshold until the write-zero low time tW0LMIN is

expired. For the most reliable communication, the volt-

age on the data line should not exceed VILMAX during

the entire tW0L or tW1L window. After the VTH threshold

has been crossed, the DS2431-A1 needs a recovery

time tREC before it is ready for the next time slot.

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

14 ______________________________________________________________________________________

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

______________________________________________________________________________________ 15

Slave-to-Master

A read-data time slot begins like a write-one time slot.

The voltage on the data line must remain below VTL

until the read low time tRL is expired. During the tRL

window, when responding with a 0, the DS2431-A1

starts pulling the data line low; its internal timing gener-

ator determines when this pulldown ends and the volt-

age starts rising again. When responding with a 1, the

DS2431-A1 does not hold the data line low at all, and

the voltage starts rising as soon as tRL is over.

The sum of tRL + δ(rise time) on one side and the inter-

nal timing generator of the DS2431-A1 on the other side

define the master sampling window (tMSRMIN to

tMSRMAX), in which the master must perform a read from

the data line. For the most reliable communication, tRL

should be as short as permissible, and the master

should read close to but no later than tMSRMAX. After

reading from the data line, the master must wait until

tSLOT is expired. This guarantees sufficient recovery time

tREC for the DS2431-A1 to get ready for the next time

slot. Note that tREC specified herein applies only to a sin-

gle DS2431-A1 attached to a 1-Wire line. For multidevice

configurations, tREC should be extended to accommo-

date the additional 1-Wire device input capacitance.

Alternatively, an interface that performs active pullup

during the 1-Wire recovery time such as the DS2482-x00

or DS2480B 1-Wire line drivers can be used.

RESISTOR MASTER DS2431-A1

tRSTL tPDL

tRSTH

tPDH

MASTER Tx "RESET PULSE" MASTER Rx "PRESENCE PULSE"

VPUP

VIHMASTER

VTH

VTL

VILMAX

tREC

tMSP

Figure 10. Initialization Procedure: Reset and Presence Pulse

RESISTOR MASTER

RESISTOR MASTER DS2431-A1

VPUP

VIHMASTER

VTH

VTL

VILMAX

VPUP

VIHMASTER

VTH

VTL

VILMAX

VPUP

VIHMASTER

VTH

VTL

VILMAX

tSLOT

tW1L

tREC

tSLOT

tW0L

tREC

MASTER

SAMPLING

WINDOW

tRL

tMSR

WRITE-ONE TIME SLOT

WRITE-ZERO TIME SLOT

READ-DATA TIME SLOT

Figure 11. Read/Write Timing Diagrams

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

16 ______________________________________________________________________________________

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

______________________________________________________________________________________ 17

Improved Network Behavior

(Switchpoint Hysteresis)

In a 1-Wire environment, line termination is possible

only during transients controlled by the bus master

(1-Wire driver). 1-Wire networks, therefore, are suscep-

tible to noise of various origins. Depending on the

physical size and topology of the network, reflections

from end points and branch points can add up or can-

cel each other to some extent. Such reflections are visi-

ble as glitches or ringing on the 1-Wire communication

line. Noise coupled onto the 1-Wire line from external

sources can also result in signal glitching. A glitch dur-

ing the rising edge of a time slot can cause a slave

device to lose synchronization with the master and,

consequently, result in a Search ROM command com-

ing to a dead end or cause a device-specific function

command to abort. For better performance in network

applications, the DS2431-A1 uses a new 1-Wire front-

end, which makes it less sensitive to noise.

The 1-Wire front-end of the DS2431-A1 differs from tra-

ditional slave devices in three characteristics.

1) There is additional lowpass filtering in the circuit that

detects the falling edge at the beginning of a time

slot. This reduces the sensitivity to high-frequency

noise.

2) There is a hysteresis at the low-to-high switching

threshold VTH. If a negative glitch crosses VTH but

does not go below VTH - VHY, it will not be recog-

nized (Figure 12, Case A).

3) There is a time window specified by the rising edge

hold-off time tREH during which glitches are ignored,

even if they extend below the VTH - VHY threshold

(Figure 12, Case B, tGL < tREH). Deep voltage drops

or glitches that appear late after crossing the VTH

threshold and extend beyond the tREH window can-

not be filtered out and are taken as the beginning of a

new time slot (Figure 12, Case C, tGL ≥tREH).

Devices that have the parameters VHY and tREH speci-

fied in their electrical characteristics use the improved

1-Wire front-end.

CRC Generation

The DS2431-A1 uses two different types of CRCs. One

CRC is an 8-bit type and is stored in the most signifi-

cant byte of the 64-bit ROM. The bus master can com-

pute a CRC value from the first 56 bits of the 64-bit

ROM and compare it to the value stored within the

DS2431-A1 to determine if the ROM data has been

received error-free. The equivalent polynomial function

of this CRC is X8+ X5+ X4+ 1. This 8-bit CRC is

received in the true (noninverted) form. It is computed

at the factory and lasered into the ROM.

The other CRC is a 16-bit type, generated according to

the standardized CRC-16 polynomial function X16 + X15

+ X2+ 1. This CRC is used for fast verification of a data

transfer when writing to or reading from the scratchpad.

In contrast to the 8-bit CRC, the 16-bit CRC is always

communicated in the inverted form. A CRC generator

inside the DS2431-A1 chip (Figure 13) calculates a new

16-bit CRC, as shown in the command flow chart

(Figure 7). The bus master compares the CRC value

read from the device to the one it calculates from the

data, and decides whether to continue with an operation

or to reread the portion of the data with the CRC error.

With the Write Scratchpad command, the CRC is gen-

erated by first clearing the CRC generator and then

shifting in the command code, the target addresses

TA1 and TA2, and all the data bytes as they were sent

by the bus master. The DS2431-A1 transmits this CRC

only if E2:E0 = 111b.

VPUP

VTH VHY

tREH

tGL

tREH

tGL

CASE A CASE CCASE B

Figure 12. Noise Suppression Scheme

With the Read Scratchpad command, the CRC is gen-

erated by first clearing the CRC generator and then

shifting in the command code, the target addresses

TA1 and TA2, the E/S byte, and the scratchpad data as

they were sent by the DS2431-A1. The DS2431-A1

transmits this CRC only if the reading continues through

the end of the scratchpad. For more information on

generating CRC values, refer to

Application Note 27

1ST

STAGE

2ND

STAGE

3RD

STAGE

4TH

STAGE

7TH

STAGE

8TH

STAGE

6TH

STAGE

5TH

STAGE

X0X1X2X3X4

POLYNOMIAL = X16 + X15 + X2 + 1

INPUT DATA

CRC OUTPUT

X5X6

11TH

STAGE

12TH

STAGE

15TH

STAGE

14TH

STAGE

13TH

STAGE

X11 X12

9TH

STAGE

10TH

STAGE

X9X10 X13 X14

16TH

STAGE

X16

X15

Figure 13. CRC-16 Hardware Description and Polynomial

Command-Specific 1-Wire Communication Protocol—Legend

SYMBOL DESCRIPTION

RST 1-Wire reset pulse generated by master.

PD 1-Wire presence pulse generated by slave.

Select Command and data to satisfy the ROM function protocol.

WS Command "Write Scratchpad."

RS Command "Read Scratchpad."

CPS Command "Copy Scratchpad."

RM Command "Read Memory."

TA Target address TA1, TA2.

TA-E/S Target address TA1, TA2 with E/S byte.

<8–T2:T0 bytes> Transfer of as many bytes as needed to reach the end of the scratchpad for a given target address.

<Data to EOM> Transfer of as many data bytes as are needed to reach the end of the memory.

CRC-16 Transfer of an inverted CRC-16.

FF Loop Indefinite loop where the master reads FF bytes.

AA Loop Indefinite loop where the master reads AA bytes.

Programming Data transfer to EEPROM; no activity on the 1-Wire bus permitted during this time.

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

18 ______________________________________________________________________________________

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

______________________________________________________________________________________ 19

Command-Specific 1-Wire Communication Protocol—Color Codes

1-Wire Communication Examples

Master to Slave Slave to Master Programming

Write Scratchpad

RST PD Select WS TA <8–T2:T0 bytes> CRC-16 FF Loop

Read Scratchpad

RST PD Select RS TA-E/S <8–T2:T0 bytes> CRC-16 FF Loop

Copy Scratchpad (Success)

RST PD Select CPS TA-E/S Programming AA Loop

Copy Scratchpad (Invalid Address or PF = 1 or Copy Protected)

RST PD Select CPS TA-E/S FF Loop

Read Memory (Success)

RST PD Select RM TA <Data to EOM> FF Loop

Read Memory (Invalid Address)

RST PD Select RM TA FF Loop

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

20 ______________________________________________________________________________________

Memory Function Example

Write to the first 8 bytes of memory page 1. Read the

entire memory.

With only a single DS2431-A1 connected to the bus

master, the communication looks like this:

MASTER MODE DATA (LSB FIRST) COMMENTS

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

Tx CCh Issue “Skip ROM” command

Tx 0Fh Issue “Write Scratchpad” command

Tx 20h TA1, beginning offset = 20h

Tx 00h TA2, address = 0020h

Tx <8 Data Bytes> Write 8 bytes of data to scratchpad

Rx <2 Bytes CRC-16> Read CRC to check for data integrity

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

Tx CCh Issue “Skip ROM” command

Tx AAh Issue “Read Scratchpad” command

Rx 20h Read TA1, beginning offset = 20h

Rx 00h Read TA2, address = 0020h

Rx 07h Read E/S, ending offset = 111b, AA, PF = 0

Rx <8 Data Bytes> Read scratchpad data and verify

Rx <2 Bytes CRC-16> Read CRC to check for data integrity

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

Tx CCh Issue “Skip ROM” command

Tx 55h Issue “Copy Scratchpad” command

Tx 20h TA1

Tx 00h TA2

Tx 07h E/S

(AUTHORIZATION CODE)

— <1-Wire Idle High> Wait tPROGMAX for the copy function to complete

Rx AAh Read copy status, AAh = success

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

Tx CCh Issue “Skip ROM” command

Tx F0h Issue “Read Memory” command

Tx 00h TA1, beginning offset = 00h

Tx 00h TA2, address = 0000h

Rx <144 Data Bytes> Read the entire memory

Tx (Reset) Reset pulse

Rx (Presence) Presence pulse

PACKAGE TYPE PACKAGE CODE DOCUMENT NO.

6 TSOC D6+1 21-0382

Package Information

For the latest package outline information and land patterns, go to www.maxim-ic.com/packages.

DS2431-A1

1024-Bit, 1-Wire EEPROM

for Automotive Applications

Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are

implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.

Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________

Revision History

REVISION

NUMBER

REVISION

DATE DESCRIPTION PAGES

CHANGED

0 11/07 Initial release. —

1 3/08

Removed all references to overdrive speed. 1–5, 8, 11, 13, 14,

15, 18