Page <1> 08/08/11 V1.1
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NPN Bipolar Transistor
Low noise tuned amplifiers
Description Symbol Value Unit
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 12 V
Emitter Base Voltage VEBO 2.5 V
Collector Current IC50 mA
Power Dissipation at Ta = 25°C
at Tc= 25°C
Ptot
-
200
300 mW
Operating and Storage Junction Tj, Tstg -65 to +200 °C
Temperature Range - - -
Thermal Resistance - - -
Junction to Case Rth (j-c) 583 °C / W
Junction to Ambient Rth (j-a) 875 °C / W
Absolute Maximum Ratings
Electrical Characteristics (Ta = 25°C Unless Otherwise Specified)
Description Symbol Test Condition Min. Typ. Max. Unit
Collector Cut off Current ICBO
VCB = 15 V, IE= 0 Ta = 150°C - - 20 nA
VCB = 15 V, IE = 0 - - 1 uA
Collector-Base Voltage VCBO IC = 1 uA, IE = 0 20 - - V
Collector-Emitter Voltage VCEO (sus) IC = 3 mA, IB = 0 12 - - V
Emitter Base Voltage VEBO IE = 10 uA, IC = 0 2.5 - - V
Collector Emitter Saturation Voltage VCE (Sat) IC = 10 mA, IB = 1 mA - - 0.4 V
Base Emitter Saturation Voltage VBE (Sat) IC = 10 mA, IB = 1 mA - - 1 V
DC Current Gain hFE IC = 3 mA,VCE = 1 V 25 - 250 -
Dynamic Characteristics
Forward Current Transfer Ratio
hfe IC = 2 mA, VCE = 6 V, f = 1 kHz 25 - 300 -
ft IC = 5 mA, VCE = 6 V, f = 100 MHz 900 - 2,000 MHz
2N5179-NRC
TO-72