2SC4061K / 2SC3415S / 2SC4015 Transistors Chroma amplifier transistor (300V, 0.1A) 2SC4061K / 2SC3415S / 2SC4015 zExternal dimensions (Unit : mm) (2) (3) 0.4 (1) 2SC4061K 0.95 0.95 1.9 2.9 zFeatures 1) High breakdown voltage. (BVCEO=300V) 2) Low collector output capacitance. (Typ. 3pF at VCB=30V) 3) Ideal for chroma circuit. 1.6 Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO 300 300 V V Emitter-base voltage Collector current VEBO IC 5 100 0.2 V mA PC Tj Storage temperature Tstg 4 W 0.3 1 150 Junction temperature 2SC3415S 1.1 Each lead has same dimensions 2 3Min. Collector power dissipation 2SC4061K 2SC3415S 2SC4015 0.3Min. ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector 3 Symbol (15Min.) Parameter 0~0.1 zAbsolute maximum ratings (Ta=25C) 0.8 0.15 2.8 C -55 to +150 C Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. 0.45 2.5 (1) Emitter (2) Collector (3) Base 0.5 0.45 5 2SC4061K 2SC3415S SPT SMT3 NP NP - AN TP T146 5000 3000 2SC4015 ATV NP - TV2 2500 (1) (2) (3) 2SC4015 Taping specifications 2.5 6.8 0.9 Type Package hFE Marking Code Basic ordering unit (pieces) 1.0 Denotes hFE 0.65Max. 0.5 4.4 zPackaging specifications and hFE 14.5 ROHM : SPT EIAJ : SC-72 (1) (2) (3) ROHM : ATV 2.54 2.54 1.05 0.45 (1) Emitter (2) Collector (3) Base Taping specifications zElectrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Parameter BVCBO BVCEO 300 300 5 - - - - - V V V IC=50A IC=100A IE=50A Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage ICBO 0.5 0.5 A A VCB=200V 2 V IC/IB=50mA/5mA 180 - - - MHz DC current transfer ratio Gain bandwidth product Collector output capacitance BVEBO - - IEBO - - VCE(sat) - hFE 56 fT 50 - - - 100 Cob - 3 pF Conditions VEB=4V VCE/IC=10V/10mA VCE=30V, IE=-10mA, f=30MHz VCB=30V, IE=0A, f=1MHz Rev.A 1/3 2SC4061K / 2SC3415S / 2SC4015 Transistors zElectrical characteristics curves 0.4mA 20 0 IB=0.2mA 0 2 4 6 8 0.6mA 40 0.4mA 20 0 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 0 4 8 12 16 C 10 5 2 1 0.5 200 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics ( ) 500 IB=0.2mA 20 500 400 600 800 1000 1200 1400 1600 BASE TO EMITTER VOLTAGE : VBE (mV) Fig.2 Ground emitter output characteristics ( ) Ta=25C -25C 40 60 50 Ta=10 0 A 1.0m 0.8mA 0.6mA A 1.0m 0.8mA VCE=10V 100 25C 60 1.4mA 1.2mA 80 200 2.0mA 1.8mA 1.6mA COLLECTOR CURRENT : IC (mA) 80 100 Ta=25C Ta=25C 2.0mA 1.8mA 1.6mA 1.4mA 1.2mA COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 100 Fig.3 Ground emitter propagation characteristics 2 VCE=10V Ta=25C 200 VCE=10V 100 5V 50 20 Ta=100C 200 100 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 1 25C 50 -25C 20 10 5 0.5 IC/IB=10 0.2 0.1 5 0.05 10 0.5 1 2 5 10 20 2 0.2 50 100 COLLECTOR CURRENT : IC (mA) 25C VBE(sat) 0.5 100C 0.2 0.1 Ta=100C 25C VCE(sat) -25C 0.05 0.02 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage Base-emitter saturation voltage vs. collector current 5 10 20 0.02 0.2 50 100 200 Ta=25C VCE=30 100 10V 50 20 10 5 -1 -2 -5 -10 -20 -50 EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth product vs. emitter current 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current ( ) TRANSITION FREQUWNCY : fT (MHZ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) IC/IB=10 1 Ta=-25C 2 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) 2 0.5 1 -100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 5 0.2 20 Ta=25C f=1MHz 10 IE=0A 5 2 1 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage Rev.A 2/3 2SC4061K / 2SC3415S / 2SC4015 Ta=25C single nonrepetitive pulse 500m IC Max (Pulse) 200m s m s =1 0m Pw s =1 m Pw 00 =1 s Pw w=2 P COLLECTOR CURRENT : IC (A) Transistors DC 100m 50m 20m 10m 5m 2m 1m 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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