2SC4061K / 2SC3415S / 2SC4015
Transistors
Rev.A 1/3
Chroma amplifier transistor (300V, 0.1A)
2SC4061K / 2SC3415S / 2SC4015
zFeatures
1) High breakdown volt age. (BVCEO=300V)
2) Low collector output cap acitance.
(T yp. 3pF at VCB=30V)
3) Ideal for chroma circuit.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
300
300
5
100
150
55 to +150
Unit
V
V
V
mA
°C
°C
0.3 W
0.2
1
2SC3415S
2SC4061K
2SC4015
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
Storage temperature
zPackaging specifications and hFE
Type 2SC3415S
SPT
NP
−−
TP
5000
2SC4015
ATV
NP
TV2
2500
Package
h
FE
Code
Marking
Basic ordering unit (pieces)
2SC4061K
SMT3
NP
T146
AN
3000
Denotes hFE
zExternal dimensions (Unit : mm)
2SC3415S
(3) Base
(2) Collector
(1) Emitter
ROHM : SPT
EIAJ : SC-72
2SC4015
(3) Base
(2) Collector
(1) Emitter
ROHM : ATV 0.451.05
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
Taping specifications
0.45
2.5
(1) (2) (3)
(15Min.)
5
3
3Min.
Taping specifications
0.45
0.5
42
2SC4061K
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
0.8
0.15
0~0.1
0.3Min.
1.1
(2)(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95 0.95
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
300
300
5
56
50
100
3
0.5
0.5
2
180
V
V
V
µA
µA
V
MHz
pF
IC
=
50µA
IC
=
100µA
IE
=
50µA
VCB
=
200V
VEB
=
4V
IC/IB
=
50mA/5mA
VCE/IC
=
10V/10mA
VCE
=
30V, IE
=
10mA, f
=
30MHz
VCB
=
30V, IE
=
0A, f
=
1MHz
−−
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
2SC4061K / 2SC3415S / 2SC4015
Transistors
Rev.A 2/3
zElectrical characteristics curves
100
60
40
20
002 46 810
80
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Ground emitter output
characteristics ( Ι )
Ta=25°C
I
B
=0.2mA
0.4mA
2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
0.6mA
0.8mA
1.0mA
100
60
40
20
004 8121620
80
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.2 Ground emitter output
characteristics ( ΙΙ )
Ta=25°C
I
B
=0.2mA
0.4mA
0.6mA
2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
0.8mA
1.0mA
200 400 600 800
1000 1200 1400 1600
200
100
20
10
2
1
0.5
5
50
BASE TO EMITTER VOLTAGE : VBE (mV)
COLLECTOR CURRENT : IC (mA)
Fig.3 Ground emitter propagation
characteristics
V
CE
=10V
Ta=100°C
25°C
25°C
5
10
20
50
100
500
200
0.2 0.5 1 2 5 10 20 50
100
COLLECTOR CURRENT : IC (mA)
DC CURRENT GAIN : hFE
Fig.4 DC current gain
vs. collector current ( Ι )
Ta=25°C
VCE=10V
5V
COLLECTOR CURRENT : IC (mA)
DC CURRENT GAIN : hFE
Fig.5 DC current gain
vs. collector current ( ΙΙ )
5
2
10
20
50
100
500
200
0.2 0.5 1 2 5 10 20 50
100
V
CE
=10V
Ta=100°C
25°C
25°C
0.02
0.05
0.1
0.2
0.5
1
2
0.2 0.5 1 2 5 10 20 50
100
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta=25°C
I
C
/I
B
=10
5
10
2
1
0.5
5
20
1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.9 Collector output capacitance
vs. collector-base voltage
Ta=25°C
f=1MHz
IE=0A
0.02
0.05
0.1
0.2
0.5
1
2
0.2 0.5 1 2 5 10 20 50
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
BASE SATURATION VOLTAGE : VBE(sat) (V)
Fig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage
vs. collector current
IC/IB=10
Ta=−25°C
Ta=100°C
25°C
25°C
100°C
25°C
VBE(sat)
VCE(sat)
100
20
10
5
50
200
12510 20 50 100
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUWNCY : f
T
(MHZ)
Fig.8 Gain bandwidth product
vs. emitter current
Ta=25°CV
CE
=30
10V
2SC4061K / 2SC3415S / 2SC4015
Transistors
Rev.A 3/3
51020 50
100 200 500 1000
12
1m
2m
5m
10m
20m
50m
100m
200m
500m
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.10 Safe operating area
Pw=1ms
Pw=100ms
Pw=2s
Pw=10ms
I
C
Max
(Pulse)
DC
Ta=25°C
single
nonrepetitive
pulse
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
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About Export Control Order in Japan
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.