Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
GaAs MULTI-CHIP MODULE
MC-7893
1 GHz CATV 23 dB POWER DOUBLER AMPLIFIER
©
NEC Compound Semiconductor Devices 2005
Document No. *************** (1st edition)
Date Published March 2005 CP(K)
Printed in Japan
DESCRIPTION
The MC-7893 is a GaAs Multi-chip Module designed for use in CATV applications up to 1 GHz. This unit has low
distortion, low noise figure and return loss across the entire frequency band.
Reliability and performance uniformity are assured by our stringent quality and control procedures.
FEATURES
• Low distortion
• High linear gain GL = 22.5 dB MIN. @ f = 1 GHz
• Low return loss
ORDERING INFORMATION
Part Number Package Supplying Form
MC-7893-AZ 7-pin special with heatsink 50 pcs MAX./Tray
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: MC-7893
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Supply Voltage VDD 30 V
Input Voltage Note Vi 70.0 dBmV
Operating Case Temperature TC −30 to +100 °C
Storage Temperature Tstg −40 to +100 °C
Note In case of single tone
PRELIMINARY PRODUCT INFORMATION
Preliminary Product Information
2
MC-7893
RECOMMENDED OPERATING CONDITIONS (ZS = ZL = 75 Ω, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Supply Voltage VDD 23.5 24.0 24.5 V
Input Voltage Vi 77 channel,
7 dB tilted across the band
− 30.0 36.0 dBmV
Operating Case Temperature TC −30 +25 +85 °C
ELECTRICAL CHARACTERISTICS (TC = 30±5°C, VDD = 24 V, ZS = ZL = 75 Ω, unless otherwise
specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Linear Gain 1 GL1 f = 40 MHz 21.0 − 22.0 dB
Linear Gain 2 GL2 f = 1 GHz 22.5 − 24.0 dB
Gain Slope GSlope f = 40 MHz to 1 GHz 0.8 − 2.2 dB
Gain Flatness GFlatness f = 40 MHz to 1 GHz, Peak to valley − − 0.6 dB
Noise Figure 1 NF1 f = 50 MHz − − 6.5 dB
Noise Figure 2 NF2 f = 1 GHz − − 7.0 dB
Operating Current IDD RF OFF − − 385 mA
Composite Triple Beat CTB 77 channel, − − −63 dBc
Cross Modulation XM VO = 52 dBmV at 547.25 MHz, − − −60 dBc
Composite 2nd Order Beat CSO 7 dB tilted across the band − − −65 dBc
Input Return Loss 1 RLi1 f = 40 MHz 20 − − dB
Input Return Loss 2 RLi2 f = 1 GHz 14 − − dB
Output Return Loss 1 RLo1 f = 40 MHz 23 − − dB
Output Return Loss 2 RLo2 f = 1 GHz 17 − − dB
Preliminary Product Information 3
MC-7893
PACKAGE DIMENSIONS
7-PIN SPECIAL WITH HEATSINK (UNIT: mm)
27.5 MAX.
38.1±0.25
45.08 MAX.
4.0±0.25
8.1 MAX.
3.2 MAX.
14.85 MAX.
0.51±0.05
12.9 MAX.
21.5 MAX.
4.19±0.13
6-32UNC2B
123 7895
19.05±0.38
2.54±0.38
0.51±0.05
2.62±0.35
10.75±0.25
4.25
+0.25
–0.35
±0.05
0.38.. A 2.5
6.3
2.54±0.25
25.4±0.25
A
φ
PIN CONNECTION
1
2378
IN
9
OUT
GND
V
DD
5
Preliminary Product Information
4
MC-7893
NOTES ON CORRECT USE
(1) The space between PC board and root of the lead should be kept more than 1 mm to prevent undesired stress
to the lead and also should be kept less than 4 mm to prevent undesired parasitic inductance.
Recommended that space is 2.0 to 3.0 mm typical.
(2) Recommended torque strength of the screw is 59 to 78 Ncm.
(3) Form the ground pattern as wide as possible to minimize ground impedance.
(to prevent undesired oscillation)
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Recommended Condition Symbol
Partial Heating Peak temperature (pin temperature) : 350°C or below Note
Soldering time (per pin of device) : 3 seconds or less
−
Note The point of pin part heating must be kept more than 1.2 mm distance from the root of lead.
Preliminary Product Information 5
MC-7893
M8E 00. 4 - 0110
The information in this document is current as of June, 2004. The information is subject to change
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and/or types are available in every country. Please check with an NEC sales representative for
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
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(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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MC-7893
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
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FAX: +82-2-558-5209
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TEL: +1-408-988-3500 FAX: +1-408-988-0279
0406
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
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For further information, please contact
