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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

SNOS032I –AUGUST 1999–REVISED JUNE 2016

LMV82x Single/Dual/Quad, Low Voltage, Low Power, RRO, 5 MHz Operational Amplifiers

1 Features

1• Qualified for Automotive Applications

• AEC-Q100 Qualified With the Following Results:

– LMV822-Q1 And LMV824-Q1 Are Available in

Automotive AEC-Q100 Grade 1 Version

• For Vs = 5 V, Typical Supply Values Unless

Otherwise Noted

• LMV824 Available With Extended Temperature

Range to 125°C

• Small SC70-5 Package 2.0 x 1.25 x 0.95 mm

• Specified Performance At 2.5 V, 2.7 V and 5 V

• VOS 3.5 mV (Max)

• TCVOS 1 uV/°C

• Gain Bandwidth Product At 2.7 V, 5 MHz

• ISupply At 2.7 V Supply, 220 μA per Amplifier

• Slew Rate 1.4 V/µs (Min)

• CMRR 90 dB

• PSRR 85 dB

• VCM At 5 V Supply, -0.3 V to 4.3 V

• Rail to Rail Output (RRO)

– 600 ΩLoad, 160 mV From Rail

– 10 kΩLoad, 55 mV From Rail

• Stable Performance with Capacitive Loads

2 Applications

• Cordless Phones

• Cellular Phones

• Laptops

• PDAs

• PCMCIA (1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

The LMV821/LMV822/LMV824 op amps bring

performance and economy to low voltage, low power

systems. With a 5 MHz unity-gain frequency, at 2.7 V

supply, and a 1.4 V/µs slew rate, the quiescent

current is only 220 µA per amplifier. They provide rail

to rail output (RRO) swing into 600 Ωload. The input

common-mode voltage range includes ground and

the maximum input offset voltage is 3.5 mV. They are

also capable of easily driving large capacitive loads

as indicated in the applications section.

The LMV821 single op amp is available in the tiny

SC70-5 package, which is about half the size of the

previous title holder, the SOT23-5. The

LMV824NDGV is specified over the extended

industrial temperature range and is in a TVSOP

package.

Overall, the LMV821/LMV822/LMV824 devices are

low voltage, low power and performance op amps

designed for a wide range of applications at an

economical price.

Device Information(1)

DEVICE NAME PACKAGE BODY SIZE

LMV821-N SOT23 (5) 2.92 mm x 1.60 mm

SC70 (5) 2.00 mm x 1.25 mm

LMV822-N SOIC (8) 4.90 mm x 3.91 mm

VSSOP (8) 3.00 mm x 3.00 mm

LMV822-N-Q1 VSSOP (8) 3.00 mm x 3.00 mm

LMV824-N SOIC (14) 8.65 mm x 3.91 mm

TSSOP (14) 5.00 mm x 4.40 mm

LMV824-N-Q1 TSSOP (14) 5.00 mm x 4.40 mm

LMV824I TVSOP (14) 4.40 mm x 3.60 mm

Telephone Line Transceiver for PCMCIA Modem Card

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

SNOS032I –AUGUST 1999–REVISED JUNE 2016

www.ti.com

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 4

6 Specifications......................................................... 5

6.1 Absolute Maximum Ratings ...................................... 5

6.2 ESD Ratings.............................................................. 5

6.3 Recommended Operating Conditions....................... 5

6.4 Thermal Information, 5 Pins...................................... 5

6.5 Thermal Information, 8 Pins(3) .................................. 6

6.6 Thermal Information, 14 Pins(3) ................................ 6

6.7 DC Electrical Characteristics 2.7V ........................... 6

6.8 DC Electrical Characteristics 2.5V............................ 9

6.9 AC Electrical Characteristics 2.7V............................ 9

6.10 DC Electrical Characteristics 5V............................. 9

6.11 AC Electrical Characteristics 5V........................... 12

6.12 Typical Characteristics.......................................... 13

7 Detailed Description............................................ 19

7.1 Overview................................................................. 19

7.2 Functional Block Diagram....................................... 19

7.3 Feature Description................................................. 19

7.4 Device Functional Modes........................................ 19

8 Application and Implementation ........................ 22

8.1 Application Information............................................ 22

8.2 Typical Applications ................................................ 22

8.3 Do's and Don'ts ...................................................... 28

9 Power Supply Recommendations...................... 28

10 Layout................................................................... 29

10.1 Layout Guidelines ................................................. 29

10.2 Layout Example .................................................... 29

11 Device and Documentation Support................. 31

11.1 Documentation Support ....................................... 31

11.2 Receiving Notification of Documentation Updates 31

11.3 Community Resources.......................................... 31

11.4 Related Links ........................................................ 31

11.5 Trademarks........................................................... 31

11.6 Electrostatic Discharge Caution............................ 31

11.7 Glossary................................................................ 31

12 Mechanical, Packaging, and Orderable

Information........................................................... 32

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision H (April 2014) to Revision I Page

• Changed Features Section..................................................................................................................................................... 1

• Moved Storage Temperature from Handling Ratings Table which has been renamed ESD Table ...................................... 5

• Changed Handling Ratings Table to ESD Ratings Table Format - no data changed............................................................ 5

• Added Thermal Information ................................................................................................................................................... 5

• Changed and updated Electrical Tables ............................................................................................................................... 9

Changes from Revision G (November 2013) to Revision H Page

• Changed data sheet flow and layout to conform with new TI standards. Added the following sections: Application

and Implementation, Power Supply Recommendations, Layout, Device and Documentation Support, Mechanical,

Packaging, and Orderable Information .................................................................................................................................. 1

• Added Added new LMV824I throughout datasheet................................................................................................................ 1

• Deleted "Refer to application note AN-397 for detailed explanation." - no such appnote.................................................... 23

• Added Added Section .......................................................................................................................................................... 28

Changes from Revision D (February 2013) to Revision G Page

• Added new part ...................................................................................................................................................................... 1

• Added new device.................................................................................................................................................................. 1

• Added new device.................................................................................................................................................................. 5

• Added new device.................................................................................................................................................................. 6

• Added new device.................................................................................................................................................................. 9

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

www.ti.com

SNOS032I –AUGUST 1999–REVISED JUNE 2016

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

SNOS032I –AUGUST 1999–REVISED JUNE 2016

www.ti.com

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

5 Pin Configuration and Functions

5-Pin SC70-5/SOT23-5

DCK0005A, DBV0005A Packages

Top View

8-Pin SOIC/VSSOP

D0008A, DGK0008A Packages

Top View

14-Pin SOIC/TSSOP/TVSOP

D0014A, PW0014A, DGV0014A Packages

Top View

Pin Functions

PIN NAME I/O DESCRIPTION

+IN I Non-Inverting Input

-IN I Inverting Input

OUT O Output

V- P Negative Supply

V+ P Positive Supply

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

www.ti.com

SNOS032I –AUGUST 1999–REVISED JUNE 2016

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test

conditions, see the Electrical Characteristics.

(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.

(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in

exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely

affect reliability.

(4) The maximum power dissipation is a function of TJ(max) ,θJA, and TA. The maximum allowable power dissipation at any ambient

temperature is PD= (TJ(max)–TA)/θJA. All numbers apply for packages soldered directly into a PC board.

6 Specifications

6.1 Absolute Maximum Ratings(1)(2)

MIN MAX UNIT

Differential Input Voltage V–V+V

Supply Voltage (V+– V −) –0.3 5.5 V

Output Short Circuit to V+(3) See (3)

Output Short Circuit to V−(3) See (3)

Soldering Information

Infrared or Convection (20 sec) 235 °C

Junction Temperature(4) 150 °C

Storage Temperature Tstg –65 150 °C

(1) Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows

safe manufacturing with a standard ESD control process.

(2) Human body model, 1.5 kΩin series wth 100 pF.

(3) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification for Q grade devices.

(4) Machine model, 200Ωin series with 100 pF.

6.2 ESD Ratings VALUE UNIT

V(ESD) Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1)

(2)(3) ±2000

VHuman body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)

LMV821 ±1500

Machine Model (MM) (4) ±200

6.3 Recommended Operating Conditions MIN NOM MAX UNIT

Supply Voltage 2.5 5.5 V

Temperature Range LMV821, LMV822, LMV824 –40 85 °C

LMV822-Q1, LMV824I and LMV824-Q1 –40 125

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information, 5 Pins(1)

THERMAL METRIC(1)

DCK

SC70-5

PACKAGE

DBV

SOT23-5

PACKAGE UNIT

5 PIN 5 PIN

RθJA Junction-to-ambient thermal resistance 263.4 217.8 °C/W

RθJC(top) Junction-to-case (top) thermal resistance 102.8 142.4 °C/W

RθJB Junction-to-board thermal resistance 50.9 49.4 °C/W

ψJT Junction-to-top characterization parameter 3.7 29.1 °C/W

ψJB Junction-to-board characterization parameter 50.2 48.5 °C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

SNOS032I –AUGUST 1999–REVISED JUNE 2016

www.ti.com

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.5 Thermal Information, 8 Pins(1)

THERMAL METRIC(1)

SOIC

PACKAGE

DGK

VSSOP

PACKAGE UNIT

8 PIN 8 PIN

RθJA Junction-to-ambient thermal resistance 132.6 193.9 °C/W

RθJC(top) Junction-to-case (top) thermal resistance 76.9 84.4 °C/W

RθJB Junction-to-board thermal resistance 73.2 114.5 °C/W

ψJT Junction-to-top characterization parameter 25.0 21.6 °C/W

ψJB Junction-to-board characterization parameter 72.6 113.0 °C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.6 Thermal Information, 14 Pins(1)

THERMAL METRIC(1)

SOIC PACKAGE PW

TSSOP

PACKAGE

DGV

TVSOP

PACKAGE UNIT

14 PIN 14 PIN 14 PIN

RθJA Junction-to-ambient thermal resistance 109.7 135.6 148.2 °C/W

RθJC(top) Junction-to-case (top) thermal resistance 65.9 63.8 67.3 °C/W

RθJB Junction-to-board thermal resistance 64.1 77.4 77.5 °C/W

ψJT Junction-to-top characterization parameter 24.5 13.0 12.9 °C/W

ψJB Junction-to-board characterization parameter 63.9 76.8 76.9 °C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A °C/W

(1) All limits are ensured by testing or statistical analysis.

(2) Typical Values represent the most likely parametric norm.

6.7 DC Electrical Characteristics 2.7V

Unless otherwise specified, all limits ensured for TJ= 25°C. V+= 2.7V, V −= 0V, VCM = 1.0V, VO= 1.35V and RL> 1 MΩ.

Temperature extremes are −40°C ≤TJ≤85°C for LMV821/822/824, and −40°C ≤TJ≤125°C for LMV822-Q1/LMV824-

Q1/LMV824I. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT

VOS Input Offset Voltage

LMV821/822/822-Q1/824 1 3.5

LMV821/822/822-Q1/824, Over Temperature 4

LMV824-Q1/LMV824I 1

LMV824-Q1/LMV824I, Over Tempeature 5.5

TCVOS Input Offset Voltage

Average Drift 1μV/°C

IBInput Bias Current 30 90 nA

Over Temperature 140

IOS Input Offset Current 0.5 30 nA

Over Temperature 50

CMRR Common Mode

Rejection Ratio 0V ≤VCM ≤1.7V 70 85 dB

0V ≤VCM ≤1.7V, Over Temperature 68

+PSRR Positive Power Supply

Rejection Ratio

1.7V ≤V+≤4V, V-= 1V, VO= 0V, VCM = 0V

LMV821/822/824/824-Q1/LMV824I 75 85

dB1.7V ≤V+≤4V, V-= 1V, VO= 0V, VCM = 0V

LMV821/822/824/824-Q1/LMV824I, Over Temperature 70

LMV822-Q1 75 85

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

www.ti.com

SNOS032I –AUGUST 1999–REVISED JUNE 2016

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

DC Electrical Characteristics 2.7V (continued)

Unless otherwise specified, all limits ensured for TJ= 25°C. V+= 2.7V, V −= 0V, VCM = 1.0V, VO= 1.35V and RL> 1 MΩ.

Temperature extremes are −40°C ≤TJ≤85°C for LMV821/822/824, and −40°C ≤TJ≤125°C for LMV822-Q1/LMV824-

Q1/LMV824I. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT

−PSRR Negative Power

Supply Rejection

Ratio

-1.0V ≤V-≤-3.3V, V+= 1.7V, VO= 0V, VCM = 0V

LMV821/822/824/824-Q1/LMV824I 73 85

dB-1.0V ≤V-≤-3.3V, V+= 1.7V, VO= 0V, VCM = 0V

LMV821/822/824/824-Q1/LMV824I, Over Temperature 70

LMV822-Q1 73 85

VCM Input Common-Mode

Voltage Range For CMRR ≥50dB –0.3 –0.2 V

1.9 2.0

AVLarge Signal Voltage

Gain

Sourcing, RL= 600Ωto 1.35V,

VO= 1.35V to 2.2V;

LMV821/822/824 90 100

dBSourcing, RL= 600Ωto 1.35V,

VO= 1.35V to 2.2V;

LMV821/822/824, Over Temperature 85

LMV822-Q1/LMV824-Q1/LMV824I 90 100

Sinking, RL= 600Ωto 1.35V,

VO= 1.35V to 0.5V

LMV821/822/824 85 90

Sinking, RL= 600Ωto 1.35V,

VO= 1.35V to 0.5V

LMV821/822/824, Over Temperature 80

LMV824I 85 90

LMV824I, Over Temperature 78

LMV822-Q1/LMV824-Q1 85 90

Sourcing, RL=2kΩto 1.35V,

VO= 1.35V to 2.2V;

LMV821/822/824 95 100

dBSourcing, RL=2kΩto 1.35V,

VO= 1.35V to 2.2V;

LMV821/822/824, Over Temperature 90

LMV822-Q1/LMV824-Q1/LMV824I 95 100

Sinking, RL= 2kΩto 1.35V,

VO= 1.35V to 0.5V

LMV821/822/824 90 95

dBSinking, RL= 2kΩto 1.35V,

VO= 1.35V to 0.5V

LMV821/822/824, Over Temperature 85

LMV822-Q1/LMV824-Q1/LMV824I 90 95

VOOutput Swing

V+= 2.7V, RL= 600Ωto 1.35V 2.50 2.58 V0.13 0.20

V+= 2.7V, RL= 600Ωto 1.35V, Over Temp 2.40 0.30

V+= 2.7V, RL= 2kΩto 1.35V 2.60 2.66 V0.08 0.120

V+= 2.7V, RL= 2kΩto 1.35V, Over Temp 2.50 0.200

IOOutput Current Sourcing, VO= 0V 12 16 mA

Sinking, VO= 2.7V 12 26

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

SNOS032I –AUGUST 1999–REVISED JUNE 2016

www.ti.com

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

DC Electrical Characteristics 2.7V (continued)

Unless otherwise specified, all limits ensured for TJ= 25°C. V+= 2.7V, V −= 0V, VCM = 1.0V, VO= 1.35V and RL> 1 MΩ.

Temperature extremes are −40°C ≤TJ≤85°C for LMV821/822/824, and −40°C ≤TJ≤125°C for LMV822-Q1/LMV824-

Q1/LMV824I. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT

ISSupply Current

LMV821 (Single) 0.22 0.3 mA

LMV821, Over Temperature 0.5

LMV822 (Dual) 0.45 0.6 mA

LMV822, Over Temperature 0.8

LMV824 (Quad) 0.72 1.0 mA

LMV824, Over Temperature 1.2

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

www.ti.com

SNOS032I –AUGUST 1999–REVISED JUNE 2016

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

(1) All limits are ensured by testing or statistical analysis.

(2) Typical Values represent the most likely parametric norm.

6.8 DC Electrical Characteristics 2.5V

Unless otherwise specified, all limits ensured for TJ= 25°C. V+= 2.5V, V −= 0V, VCM = 1.0V, VO= 1.25V and RL> 1 MΩ.

Temperature extremes are −40°C ≤TJ≤85°C for LMV821/822/824, and −40°C ≤TJ≤125°C for LMV822-Q1/LMV824-

Q1/LMV824I. PARAMETER CONDITION MIN (1) TYP (2) MAX (1) UNIT

VOS Input Offset Voltage

LMV821/822/822-Q1/824 1 3.5

LMV821/822/822-Q1/824, Over Temperature 4

LMV824-Q1/LMV824I 1

LMV824-Q1/LMV824I, Over Temperature 5.5

VOOutput Swing

V+= 2.5V, RL= 600Ωto 1.25V 2.30 2.37 V0.13 0.20

V+= 2.5V, RL= 600Ωto 1.25V, Over Temperature 2.20 0.30

V+= 2.5V, RL= 2kΩto 1.25V 2.40 2.46 V0.08 0.12

V+= 2.5V, RL= 2kΩto 1.25V, Over Temperature 2.30 0.20

(1) All limits are ensured by testing or statistical analysis.

(2) Typical Values represent the most likely parametric norm.

(3) V+= 5V. Connected as voltage follower with 3V step input. Number specified is the slower of the positive and negative slew rates.

(4) Input referred, V+= 5V and RL= 100kΩconnected to 2.5V. Each amp excited in turn with 1 kHz to produce VO= 3 VPP.

6.9 AC Electrical Characteristics 2.7V

Unless otherwise specified, all limits ensured for TJ= 25°C. V+= 2.7V, V −= 0V, VCM = 1.0V, VO= 1.35V and RL> 1 MΩ.

Temperature extremes are −40°C ≤TJ≤85°C for LMV821/822/824, and −40°C ≤TJ≤125°C for LMV822-Q1/LMV824-

Q1/LMV824I. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT

SR Slew Rate See (3) 1.5 V/μs

GBW Gain-Bandwdth

Product 5 MHz

ΦmPhase Margin 61 Deg.

GmGain Margin 10 dB

Amp-to-Amp Isolation See (4) 135 dB

enInput-Related Voltage

Noise f = 1 kHz, VCM = 1V 28 nV/√Hz

inInput-Referred

Current Noise f = 1 kHz 0.1 pA/√Hz

THD Total Harmonic

Distortion f = 1 kHz, AV=−2,

RL= 10 kΩ, VO= 4.1 V PP 0.01%

(1) All limits are ensured by testing or statistical analysis.

(2) Typical Values represent the most likely parametric norm.

6.10 DC Electrical Characteristics 5V

Unless otherwise specified, all limits ensured for TJ= 25°C. V+= 5 V, V −= 0V, VCM = 2.0V, VO= 2.5V and RL> 1 MΩ.

Temperature extremes are −40°C ≤TJ≤85°C for LMV821/822/824, and −40°C ≤TJ≤125°C for LMV822-Q1/LMV824-

Q1/LMV824I. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT

VOS Input Offset Voltage

LMV821/822/822-Q1/824 1 3.5

LMV821/822/822-Q1/824, Over Temperature 4.0

LMV824-Q1/LMV824I 1

LMV824-Q1/ LMV824I, Over Temperature 5.5

TCVOS Input Offset Voltage

Average Drift 1μV/°C

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

SNOS032I –AUGUST 1999–REVISED JUNE 2016

www.ti.com

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

DC Electrical Characteristics 5V (continued)

Unless otherwise specified, all limits ensured for TJ= 25°C. V+= 5 V, V −= 0V, VCM = 2.0V, VO= 2.5V and RL> 1 MΩ.

Temperature extremes are −40°C ≤TJ≤85°C for LMV821/822/824, and −40°C ≤TJ≤125°C for LMV822-Q1/LMV824-

Q1/LMV824I. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT

IBInput Bias Current 40 100 nA

Over Temperature 150

IOS Input Offset Current 0.5 30 nA

Over Temperature 50

CMRR Common Mode

Rejection Ratio 0V ≤VCM ≤4.0V 72 90 dB

0V ≤VCM ≤4.0V, Over Temperature 70

+PSRR Positive Power

Supply Rejection

Ratio

1.7V ≤V+≤4V, V-= 1V, VO= 0V, VCM = 0V

LMV821/822/824/824-Q1/824I 85 75

dB1.7V ≤V+≤4V, V-= 1V, VO= 0V, VCM = 0V

LMV821/822/824/824-Q1/824I, Over Temperature 70

LMV822-Q1 75 85

−PSRR Negative Power

Supply Rejection

Ratio

-1.0V ≤V-≤-3.3V, V+= 1.7V, VO= 0V, VCM = 0V

LMV821/822/824/824-Q1/824I 73 85

dB-1.0V ≤V-≤-3.3V, V+= 1.7V, VO= 0V, VCM = 0V

LMV821/822/824/824-Q1/824I 70

LMV822-Q1 73 85

VCM Input Common-Mode

Voltage Range For CMRR ≥50dB -0.3 -0.2 V

4.2 4.3 V

AVLarge Signal Voltage

Gain

Sourcing, RL= 600Ωto 2.5V,

VO= 2.5V to 4.5V;

LMV821/822/824 95 105

dBSourcing, RL= 600Ωto 2.5V,

VO= 2.5V to 4.5V;

LMV821/822/824, Over Temperature 90

LMV822-Q1/LMV824-Q1/LMV824I 95 105

Sinking, RL= 600Ωto 2.5V,

VO= 2.5V to 0.5V

LMV821/822/824 95 105

Sinking, RL= 600Ωto 2.5V,

VO= 2.5V to 0.5V

LMV821/822/824, Over Temperature 90

LMV824I 95 105

LMV824I, Over Temperature 82

LMV822-Q1/LMV824-Q1 95 105

Sourcing, RL=2kΩto 2.5V,

VO= 2.5V to 4.5V;

LMV821/822/824 95 105

dBSourcing, RL=2kΩto 2.5V,

VO= 2.5V to 4.5V;

LMV821/822/824, Over Temperature 90

LMV822-Q1/LMV824-Q1/LMV824I 95 105

Sinking, RL= 2kΩto 2.5V,

VO= 2.5V to 0.5V

LMV821/822/824 95 105

dBSinking, RL= 2kΩto 2.5V,

VO= 2.5V to 0.5V

LMV821/822/824, Over Temperature 90

LMV822-Q1/LMV824-Q1/LMV824I 95 105

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DC Electrical Characteristics 5V (continued)

Unless otherwise specified, all limits ensured for TJ= 25°C. V+= 5 V, V −= 0V, VCM = 2.0V, VO= 2.5V and RL> 1 MΩ.

Temperature extremes are −40°C ≤TJ≤85°C for LMV821/822/824, and −40°C ≤TJ≤125°C for LMV822-Q1/LMV824-

Q1/LMV824I. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT

VOOutput Swing

V+= 5V,RL= 600Ωto 2.5V 4.75 4.84

V+= 5V,RL= 600Ωto 2.5V, Over Temperature 4.70

V+= 5V,RL= 600Ωto 2.5V (LMV824-Q1, LMV824I) 4.84

V+= 5V,RL= 600Ωto 2.5V (LMV824-Q1, LMV824I),

Over Temperature 4.60

V+= 5V,RL= 600Ωto 2.5V 0.17 0.250

V+= 5V,RL= 600Ωto 2.5V, Over Temperature 0.30

V+= 5V,RL= 600Ωto 2.5V (LMV824-Q1, LMV824I) 0.17

V+= 5V,RL= 600Ωto 2.5V (LMV824-Q1, LMV824I),

Over Temperature 0.40

V+= 5V, RL= 2kΩto 2.5V 4.85 4.90 V0.10 0.15

V+= 5V, RL= 2kΩto 2.5V, Over Temperature 4.80 0.20

IOOutput Current

Sourcing, VO= 0V 20 45 mA

Sourcing, VO= 0V, Over Temperature 15

Sourcing, VO= 0V

LMV824I 20 45 mA

Sourcing, VO= 0V

LMV824I, Over Temperature 10

Sinking, VO= 5V 20 40 mA

Sinking, VO= 5V, Over Temperature 15

Sinking, VO= 5V

LMV824I 20 40 mA

Sinking, VO= 5V

LMV824I, Over Temperature 10

ISSupply Current

LMV821 (Single) 0.30 0.4 mA

LMV821, Over Temperature 0.6

LMV822 (Dual) 0.5 0.7 mA

LMV822, Over Temperature 0.9

LMV824 (Quad) 1.0 1.3 mA

LMV824, Over Temperature 1.5

LMV824I (Quad) 1.0 1.3 mA

LMV824I, Over Temperature 1.6

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(1) All limits are ensured by testing or statistical analysis.

(2) Typical Values represent the most likely parametric norm.

(3) V+= 5V. Connected as voltage follower with 3V step input. Number specified is the slower of the positive and negative slew rates.

(4) Input referred, V+= 5V and RL= 100kΩconnected to 2.5V. Each amp excited in turn with 1 kHz to produce VO= 3 VPP.

6.11 AC Electrical Characteristics 5V

Unless otherwise specified, all limits ensured for TJ= 25°C. V+= 5 V, V −= 0V, VCM = 2.0V, VO= 2.5V and RL> 1 MΩ.

Temperature extremes are −40°C ≤TJ≤85°C for LMV821/822/824, and −40°C ≤TJ≤125°C for LMV822-Q1/LMV824-

Q1/LMV824I. PARAMETER TEST CONDITIONS MIN (1) TYP (2) MAX (1) UNIT

SR Slew Rate See (3) 1.4 2.0 V/μs min

GBW Gain-Bandwdth

Product 5.6 MHz

ΦmPhase Margin 67 Deg.

GmGain Margin 15 dB

Amp-to-Amp Isolation See (4) 135 dB

enInput-Related Voltage

Noise f = 1 kHz, VCM = 1V 24 nV/√Hz

inInput-Referred

Current Noise f = 1 kHz 0.25 pA/√Hz

THD Total Harmonic

Distortion f = 1 kHz, AV=−2,

RL= 10 kΩ, VO= 4.1 V PP 0.01%

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6.12 Typical Characteristics

Unless otherwise specified, VS= +5V, single supply, TA= 25°C.

Figure 1. Supply Current vs. Supply Voltage (LMV821) Figure 2. Input Current vs. Temperature

Figure 3. Sourcing Current vs. Output Voltage (VS= 2.7V) Figure 4. Sourcing Current vs Output Voltage (VS= 5V)

Figure 5. Sinking Current vs. Output Voltage (VS= 2.7V) Figure 6. Sinking Current vs. Output Voltage

(VS= 5V)

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Typical Characteristics (continued)

Unless otherwise specified, VS= +5V, single supply, TA= 25°C.

Figure 7. Output Voltage Swing vs. Supply Voltage

(RL= 10kΩ)Figure 8. Output Voltage Swing vs. Supply Voltage

(RL= 2kΩ)

Figure 9. Output Voltage Swing vs. Supply Voltage (RL=

600Ω)Figure 10. Output Voltage Swing vs. Load Resistance

Figure 11. Input Voltage Noise vs. Frequency Figure 12. Input Current Noise vs. Frequency

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Typical Characteristics (continued)

Unless otherwise specified, VS= +5V, single supply, TA= 25°C.

Figure 13. Crosstalk Rejection vs. Frequency Figure 14. +PSRR vs. Frequency

Figure 15. -PSRR vs. Frequency Figure 16. CMRR vs. Frequency

Figure 17. Input Voltage vs. Output Voltage Figure 18. Gain and Phase Margin vs. Frequency

(RL= 100kΩ, 2kΩ, 600Ω) at 2.7V

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Typical Characteristics (continued)

Unless otherwise specified, VS= +5V, single supply, TA= 25°C.

Figure 19. Gain and Phase Margin vs. Frequency

(RL= 100kΩ, 2kΩ, 600Ω) at 5V Figure 20. Gain and Phase Margin vs. Frequency

(Temp.= 25, -40, 85°C, RL= 10kΩ) at 2.7V

Figure 21. Gain and Phase Margin vs. Frequency

(Temp.= 25, -40, 85 °C, RL= 10kΩ) at 5V Figure 22. Gain and Phase Margin vs. Frequency

(CL= 100pF, 200pF, 0pF, RL= 10kΩ) at 2.7V

Figure 23. Gain and Phase Margin vs. Frequency

(CL= 100pF, 200pF, 0pF RL= 10kΩ) at 5V Figure 24. Gain and Phase Margin vs. Frequency

(CL= 100pF, 200pF, 0pF RL= 600Ω) at 2.7V

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Typical Characteristics (continued)

Unless otherwise specified, VS= +5V, single supply, TA= 25°C.

Figure 25. Gain and Phase Margin vs. Frequency

(CL= 100pF, 200pF, 0pF RL= 600Ω) at 5V

Figure 26. Slew Rate vs. Supply Voltage

Figure 27. Non-Inverting Large Signal Pulse Response Figure 28. Non-Inverting Small Signal Pulse Response

Figure 29. Inverting Large Signal Pulse Response Figure 30. Inverting Small Signal Pulse Response

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Typical Characteristics (continued)

Unless otherwise specified, VS= +5V, single supply, TA= 25°C.

Figure 31. THD vs. Frequency

OUT

V+

V–

IN –

IN +

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7 Detailed Description

7.1 Overview

The LMV821/LMV822/LMV824 bring performance and economy to low voltage / low power systems. With a 5

MHz unity-gain frequency and a specified 1.4 V/µs slew rate, the quiescent current is only 220 µA/amplifier (2.7

V). They provide rail-to-rail (R-to-R) output swing into heavy loads (600 Ωspecified). The input common-mode

voltage range includes ground, and the maximum input offset voltage is 3.5 mV.

7.2 Functional Block Diagram

Figure 32. (Each Amplifier)

7.3 Feature Description

The amplifier's differential inputs consist of a non-inverting input (+IN) and an inverting input (–IN). The amplifer

amplifies only the difference in voltage between the two inpus, which is called the differential input voltage. The

output voltage of the op-amp Vout is given by Equation 1:

VOUT = AOL (IN+- IN-) (1)

where AOL is the open-loop gain of the amplifier, typically around 100dB (100,000x, or 10uV per Volt).

7.4 Device Functional Modes

This section covers the following design considerations:

1. Frequency and Phase Response Considerations

2. Unity-Gain Pulse Response Considerations

3. Input Bias Current Considerations

7.4.1 Frequency and Phase Response Considerations

The relationship between open-loop frequency response and open-loop phase response determines the closed-

loop stability performance (negative feedback). The open-loop phase response causes the feedback signal to

shift towards becoming positive feedback, thus becoming unstable. The further the output phase angle is from

the input phase angle, the more stable the negative feedback will operate. Phase Margin (φm) specifies this

output-to-input phase relationship at the unity-gain crossover point. Zero degrees of phase-margin means that

the input and output are completely in phase with each other and will sustain oscillation at the unity-gain

frequency.

The AC tables show φmfor a no load condition. But φmchanges with load. The Gain and Phase margin vs

Frequency plots in the curve section can be used to graphically determine the φmfor various loaded conditions.

To do this, examine the phase angle portion of the plot, find the phase margin point at the unity-gain frequency,

and determine how far this point is from zero degree of phase-margin. The larger the phase-margin, the more

stable the circuit operation.

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Device Functional Modes (continued)

The bandwidth is also affected by load. The graphs of Figure 33 and Figure 34 provide a quick look at how

various loads affect the φmand the bandwidth of the LMV821/822/824 family. These graphs show capacitive

loads reducing both φmand bandwidth, while resistive loads reduce the bandwidth but increase the φm. Notice

how a 600Ωresistor can be added in parallel with 220 picofarads capacitance, to increase the φm20°(approx.),

but at the price of about a 100 kHz of bandwidth.

Overall, the LMV821/822/824 family provides good stability for loaded condition.

Figure 33. Phase Margin vs Common Mode Voltage for Various Loads

Figure 34. Unity-Gain Frequency vs Common Mode Voltage for Various Loads

7.4.2 Unity Gain Pulse Response Consideration

A pull-up resistor is well suited for increasing unity-gain, pulse response stability. For example, a 600 Ωpull-up

resistor reduces the overshoot voltage by about 50%, when driving a 220 pF load. Figure 35 shows how to

implement the pull-up resistor for more pulse response stability.

Figure 35. Using a Pull-up Resistor at the Output for Stabilizing Capacitive Loads

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Device Functional Modes (continued)

Higher capacitances can be driven by decreasing the value of the pull-up resistor, but its value shouldn't be

reduced beyond the sinking capability of the part. An alternate approach is to use an isolation resistor as

illustrated in Figure 36.

Figure 37 shows the resulting pulse response from a LMV824, while driving a 10,000 pF load through a 20Ω

isolation resistor.

Figure 36. Using an Isolation Resistor to Drive Heavy Capacitive Loads

Figure 37. Pulse Response per Figure 36

7.4.3 Input Bias Current Consideration

Input bias current (IB) can develop a somewhat significant offset voltage. This offset is primarily due to IBflowing

through the negative feedback resistor, RF. For example, if IBis 90 nA (max @ room) and RFis 100 kΩ, then an

offset of 9 mV will be developed (VOS= IBx RF).Using a compensation resistor (RC), as shown in Figure 38,

cancels out this affect. But the input offset current (IOS) will still contribute to an offset voltage in the same

manner - typically 0.05 mV at room temp.

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Device Functional Modes (continued)

Figure 38. Canceling the Voltage Offset Effect of Input Bias Current

8 Application and Implementation

8.1 Application Information

The LMV82x bring performance and economy to low voltage/low power systems. They provide rail-to-rail output

swing into heavy loads and are capable of driving large capacitive loads.

8.2 Typical Applications

8.2.1 Telephone-Line Transceiver

Figure 39. Telephone-Line Transceiver for a PCMCIA Modem Card

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Typical Applications (continued)

8.2.1.1 Design Requirements

The telephone-line transceiver of Figure 39 provides a full-duplexed connection through a PCMCIA, miniature

transformer. The differential configuration of receiver portion (UR), cancels reception from the transmitter portion

(UT). Note that the input signals for the differential configuration of UR, are the transmit voltage (VT) and VT/2.

This is because Rmatch is chosen to match the coupled telephone-line impedance; therefore dividing VTby two

(assuming R1 >> Rmatch).

8.2.1.2 Detailed Design Procedure

The differential configuration of UR has its resistors chosen to cancel the VTand VT/2 inputs according to the

following equation:

(2)

Note that Cc is included for canceling out the inadequacies of the lossy, miniature transformer.

8.2.2 “Simple” Mixer (Amplitude Modulator)

Figure 40. Amplitude Modulator Circuit

8.2.2.1 Design Requirements

The simple mixer can be applied to applications that utilize the Doppler Effect to measure the velocity of an

object. The difference frequency is one of its output frequency components. This difference frequency magnitude

(/FM-FC/) is the key factor for determining an object's velocity per the Doppler Effect. If a signal is transmitted to a

moving object, the reflected frequency will be a different frequency. This difference in transmit and receive

frequency is directly proportional to an object's velocity.

8.2.2.2 Detailed Design Procedure

The mixer of Figure 40 is simple and provides a unique form of amplitude modulation. Vi is the modulation

frequency (FM), while a +3V square-wave at the gate of Q1, induces a carrier frequency (FC). Q1 switches

(toggles) U1 between inverting and non-inverting unity gain configurations. Offsetting a sine wave above ground

at Vi results in the oscilloscope photo of Figure 41.

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Typical Applications (continued)

8.2.2.3 Application Performance Plot

Figure 41. Output signal of Figure 40

8.2.3 Tri-Level Voltage Detector

Figure 42. Tri-level Voltage Detector

8.2.3.1 Design Requirements

The tri-level voltage detector of Figure 42 provides a type of window comparator function. It detects three

different input voltage ranges: Min-range, Mid-range, and Max-range. The output voltage (VO) is at VCC for the

Min-range. VOis clamped at GND for the Mid-range. For the Max-range, VOis at Vee.Figure 43 shows a VOvs.

VIoscilloscope photo per the circuit of Figure 42.

-VIN +VIN

-V0+V0

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Typical Applications (continued)

Its operation is as follows: VIdeviating from GND, causes the diode bridge to absorb IIN to maintain a clamped

condition (VO= 0V). Eventually, IIN reaches the bias limit of the diode bridge. When this limit is reached, the

clamping effect stops and the op amp responds open loop. The design equation directly preceding Figure 43,

shows how to determine the clamping range. The equation solves for the input voltage band on each side GND.

The mid-range is twice this voltage band.

8.2.3.2 Detailed Design Procedure

(3)

8.2.3.3 Application Performance Plot

Figure 43. X, Y Oscilloscope Trace showing VOUT vs VIN per the Circuit of Tri-Level Voltage Detector

8.2.4 Dual Amplifier Active Filters (DAAFs)

3 kHz Low-Pass Active Filter with a Butterworth Response and a Pass Band Gain of Times Two

Figure 44. Dual Amplifier Active Low-Pass Filter

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Typical Applications (continued)

300 Hz High-Pass Active Filter with a Butterworth Response and a Pass Band Gain of Times Two

Figure 45. Dual Active Amplifier High-Pass Filter

8.2.4.1 Design Requirements

The LMV822/24 bring economy and performance to DAAFs. The low-pass and the high-pass filters of Figure 44

and Figure 45 (respectively), offer one key feature: excellent sensitivity performance. Good sensitivity is when

deviations in component values cause relatively small deviations in a filter's parameter such as cutoff frequency

(Fc). Single amplifier active filters like the Sallen-Key provide relatively poor sensitivity performance that

sometimes cause problems for high production runs; their parameters are much more likely to deviate out of

specification than a DAAF would. The DAAFs of Figure 44 and Figure 45 are well suited for high volume

production.

8.2.4.2 Detailed Design Procedure

Active filters are also sensitive to an op amp's parameters -Gain and Bandwidth, in particular. The LMV822/24

provide a large gain and wide bandwidth. And DAAFs make excellent use of these feature specifications.

Single Amplifier versions require a large open-loop to closed-loop gain ratio - approximately 50 to 1, at the Fc of

the filter response.

In addition to performance, DAAFs are relatively easy to design and implement. The design equations for the

low-pass and high-pass DAAFs are shown below. The first two equation calculate the Fc and the circuit Quality

Factor (Q) for the LPF (Figure 44). The second two equations calculate the Fc and Q for the HPF (Figure 45).

(4)

To simplify the design process, certain components are set equal to each other. Refer to Figure 44 and

Figure 45. These equal component values help to simplify the design equations as follows:

(5)

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Typical Applications (continued)

To illustrate the design process/implementation, a 3 kHz, Butterworth response, low-pass filter DAAF (Figure 44)

is designed as follows:

1. Choose C1= C3=C=1nF

2. Choose R4= R5=1kΩ

3. Calculate Raand R2for the desired Fc as follows:

(6)

4. Calculate R3for the desired Q. The desired Q for a Butterworth (Maximally Flat) response is 0.707 (45

degrees into the s-plane). R3calculates as follows:

(7)

Notice that R3could also be calculated as 0.707 of Raor R2.

The circuit was implemented and its cutoff frequency measured. The cutoff frequency measured at 2.92 kHz.

The circuit also showed good repeatability. Ten different LMV822 samples were placed in the circuit. The

corresponding change in the cutoff frequency was less than a percent.

8.2.4.3 Application Perfromance Plots

Butterworth Response as Measured by the HP3577A Network Analyzer

Figure 46. 300 kHz, DAAF Low-Pass Filter Measurement Results

Figure 46 shows an impressive photograph of a network analyzer measurement (HP3577A). The measurement

was taken from a 300 kHz version of Figure 44. At 300 kHz, the open-loop to closed-loop gain ratio @ Fc is

about 5 to 1. This is 10 times lower than the 50 to 1 “rule of thumb” for Single Amplifier Active Filters.

Table 1 provides sensitivity measurements for a 10 MΩload condition. The left column shows the passive

components for the 3 kHz low-pass DAAF. The third column shows the components for the 300 Hz high-pass

DAAF. Their respective sensitivity measurements are shown to the right of each component column. Their values

consists of the percent change in cutoff frequency (Fc) divided by the percent change in component value. The

lower the sensitivity value, the better the performance.

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Typical Applications (continued)

Each resistor value was changed by about 10 percent, and this measured change was divided into the measured

change in Fc. A positive or negative sign in front of the measured value, represents the direction Fc changes

relative to components' direction of change. For example, a sensitivity value of negative 1.2, means that for a 1

percent increase in component value, Fc decreases by 1.2 percent.

Note that this information provides insight on how to fine tune the cutoff frequency, if necessary. It should be also

noted that R4and R5of each circuit also caused variations in the pass band gain. Increasing R4by ten percent,

increased the gain by 0.4 dB, while increasing R5by ten percent, decreased the gain by 0.4 dB.

Table 1. Component Sensitivity Measurements

Component

(LPF) Sensitivity

(LPF) Component

(HPF) Sensitivity

(HPF)

Ra-1.2 Ca-0.7

C1-0.1 Rb-1.0

R2-1.1 R1+0.1

R3+0.7 C2-0.1

C3-1.5 R3+0.1

R4-0.6 R4-0.1

R5+0.6 R5+0.1

8.3 Do's and Don'ts

Do properly bypass the power supplies.

Do add series resistence to the oputput when driving capacitive loads, particularly cables, Muxes and ADC

inputs.

Do not exceed the input common mode range. The input is not "Rail to Rail" and will limit upper output swing

when configured as followers or other low-gain applications. See the Input Common Mode Voltage Range

section of the Electrical Table.

Do add series current limiting resistors and external schottky clamp diodes if input voltage is expected to exceed

the supplies. Limit the current to 1mA or less (1KΩper volt).

9 Power Supply Recommendations

For proper operation, the power supplies bust be properly decoupled. For decoupling the supply lines it is

suggested that 10 nF capacitors be placed as close as possible to the op amp power supply pins. For single

supply, place a capacitor between V+and V−supply leads. For dual supplies, place one capacitor between V+

and ground, and one capacitor between V-and ground.

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10 Layout

10.1 Layout Guidelines

The V+ pin should be bypassed to ground with a low ESR capacitor.

The optimum placement is closest to the V+ and ground pins.

Care should be taken to minimize the loop area formed by the bypass capacitor connection between V+ and

ground.

The ground pin should be connected to the PCB ground plane at the pin of the device.

The feedback components should be placed as close to the device as possible minimizing strays.

10.2 Layout Example

Figure 47. 2-D Layout

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

SNOS032I –AUGUST 1999–REVISED JUNE 2016

www.ti.com

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

Layout Example (continued)

Figure 48. 3-D Layout

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

www.ti.com

SNOS032I –AUGUST 1999–REVISED JUNE 2016

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

For related documentation see the following:

•TI Filterpro Software

•TI Universal Operational Amplifier Evaluation Module

•TINA-TI SPICE-Based Analog Simulation Program

11.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper

right corner, click on Alert me to register and receive a weekly digest of any product information that has

changed. For change details, review the revision history included in any revised document.

11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

11.4 Related Links

The table below lists quick access links. Categories include technical documents, support and community

resources, tools and software, and quick access to sample or buy.

Table 2. Related Links

PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL

DOCUMENTS TOOLS &

SOFTWARE SUPPORT &

COMMUNITY

LMV821-N Click here Click here Click here Click here Click here

LMV822-N Click here Click here Click here Click here Click here

LMV822-N-Q1 Click here Click here Click here Click here Click here

LMV824-N Click here Click here Click here Click here Click here

LMV824-N-Q1 Click here Click here Click here Click here Click here

11.5 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.6 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

11.7 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

LMV821-N

LMV822-N

LMV822-N-Q1

LMV824-N

LMV824-N-Q1

SNOS032I –AUGUST 1999–REVISED JUNE 2016

www.ti.com

Product Folder Links: LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1

12 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM

www.ti.com 26-Sep-2017

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LMV821M5 NRND SOT-23 DBV 5 1000 TBD Call TI Call TI -40 to 85 A14

LMV821M5/NOPB ACTIVE SOT-23 DBV 5 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A14

LMV821M5X NRND SOT-23 DBV 5 3000 TBD Call TI Call TI -40 to 85 A14

LMV821M5X/NOPB ACTIVE SOT-23 DBV 5 3000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A14

LMV821M7 NRND SC70 DCK 5 1000 TBD Call TI Call TI -40 to 85 A15

LMV821M7/NOPB ACTIVE SC70 DCK 5 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A15

LMV821M7X NRND SC70 DCK 5 3000 TBD Call TI Call TI -40 to 85 A15

LMV821M7X/NOPB ACTIVE SC70 DCK 5 3000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 A15

LMV822M NRND SOIC D 8 95 TBD Call TI Call TI -40 to 85 LMV

822M

LMV822M/NOPB ACTIVE SOIC D 8 95 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMV

822M

LMV822MM NRND VSSOP DGK 8 1000 TBD Call TI Call TI -40 to 85 V822

LMV822MM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS

& no Sb/Br) CU NIPDAUAG | CU SN Level-1-260C-UNLIM -40 to 85 V822

LMV822MMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS

& no Sb/Br) CU NIPDAUAG | CU SN Level-1-260C-UNLIM -40 to 85 V822

LMV822MX NRND SOIC D 8 2500 TBD Call TI Call TI -40 to 85 LMV

822M

LMV822MX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMV

822M

LMV822Q1MM/NOPB ACTIVE VSSOP DGK 8 1000 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 AKAA

LMV822Q1MMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 AKAA

LMV824M/NOPB ACTIVE SOIC D 14 55 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMV824M

LMV824MT/NOPB ACTIVE TSSOP PW 14 94 Green (RoHS

& no Sb/Br) CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 85 LMV824

PACKAGE OPTION ADDENDUM

www.ti.com 26-Sep-2017

Addendum-Page 2

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

LMV824MTX NRND TSSOP PW 14 2500 TBD Call TI Call TI -40 to 85 LMV824

LMV824MTX/NOPB ACTIVE TSSOP PW 14 2500 Green (RoHS

& no Sb/Br) CU NIPDAU | CU SN Level-1-260C-UNLIM -40 to 85 LMV824

LMV824MX/NOPB ACTIVE SOIC D 14 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 LMV824M

LMV824NDGVR ACTIVE TVSOP DGV 14 2000 Green (RoHS

& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 MV824N

LMV824Q1MA/NOPB ACTIVE SOIC D 14 55 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LMV824Q1

LMV824Q1MAX/NOPB ACTIVE SOIC D 14 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LMV824Q1

LMV824Q1MT/NOPB ACTIVE TSSOP PW 14 94 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LMV824

Q1MT

LMV824Q1MTX/NOPB ACTIVE TSSOP PW 14 2500 Green (RoHS

& no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 125 LMV824

Q1MT

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance

do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may

reference these types of products as "Pb-Free".

RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.

Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based

flame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

PACKAGE OPTION ADDENDUM

www.ti.com 26-Sep-2017

Addendum-Page 3

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF LMV822-N, LMV822-N-Q1, LMV824-N, LMV824-N-Q1 :

•Catalog: LMV822-N, LMV824-N

•Automotive: LMV822-N-Q1, LMV824-N-Q1

NOTE: Qualified Version Definitions:

•Catalog - TI's standard catalog product

•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LMV821M5 SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LMV821M5/NOPB SOT-23 DBV 5 1000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LMV821M5X SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LMV821M5X/NOPB SOT-23 DBV 5 3000 178.0 8.4 3.2 3.2 1.4 4.0 8.0 Q3

LMV821M7 SC70 DCK 5 1000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3

LMV821M7/NOPB SC70 DCK 5 1000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3

LMV821M7X SC70 DCK 5 3000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3

LMV821M7X/NOPB SC70 DCK 5 3000 178.0 8.4 2.25 2.45 1.2 4.0 8.0 Q3

LMV822MM VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LMV822MM/NOPB VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LMV822MMX/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LMV822MX SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LMV822MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1

LMV822Q1MM/NOPB VSSOP DGK 8 1000 178.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LMV822Q1MMX/NOPB VSSOP DGK 8 3500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

LMV824MTX TSSOP PW 14 2500 330.0 12.4 6.95 5.6 1.6 8.0 12.0 Q1

LMV824MTX/NOPB TSSOP PW 14 2500 330.0 12.4 6.95 5.6 1.6 8.0 12.0 Q1

LMV824MX/NOPB SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 22-Sep-2017

Pack Materials-Page 1

Device Package

Type Package

Drawing Pins SPQ Reel

Diameter

(mm)

Reel

Width

W1 (mm)

(mm) B0

(mm) K0

(mm) P1

(mm) W

(mm) Pin1

Quadrant

LMV824NDGVR TVSOP DGV 14 2000 330.0 12.4 6.8 4.0 1.6 8.0 12.0 Q1

LMV824Q1MAX/NOPB SOIC D 14 2500 330.0 16.4 6.5 9.35 2.3 8.0 16.0 Q1

LMV824Q1MTX/NOPB TSSOP PW 14 2500 330.0 12.4 6.95 5.6 1.6 8.0 12.0 Q1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LMV821M5 SOT-23 DBV 5 1000 210.0 185.0 35.0

LMV821M5/NOPB SOT-23 DBV 5 1000 210.0 185.0 35.0

LMV821M5X SOT-23 DBV 5 3000 210.0 185.0 35.0

LMV821M5X/NOPB SOT-23 DBV 5 3000 210.0 185.0 35.0

LMV821M7 SC70 DCK 5 1000 210.0 185.0 35.0

LMV821M7/NOPB SC70 DCK 5 1000 210.0 185.0 35.0

LMV821M7X SC70 DCK 5 3000 210.0 185.0 35.0

LMV821M7X/NOPB SC70 DCK 5 3000 210.0 185.0 35.0

LMV822MM VSSOP DGK 8 1000 210.0 185.0 35.0

LMV822MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0

LMV822MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0

LMV822MX SOIC D 8 2500 367.0 367.0 35.0

LMV822MX/NOPB SOIC D 8 2500 367.0 367.0 35.0

LMV822Q1MM/NOPB VSSOP DGK 8 1000 210.0 185.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 22-Sep-2017

Pack Materials-Page 2

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

LMV822Q1MMX/NOPB VSSOP DGK 8 3500 367.0 367.0 35.0

LMV824MTX TSSOP PW 14 2500 367.0 367.0 35.0

LMV824MTX/NOPB TSSOP PW 14 2500 367.0 367.0 35.0

LMV824MX/NOPB SOIC D 14 2500 367.0 367.0 35.0

LMV824NDGVR TVSOP DGV 14 2000 367.0 367.0 35.0

LMV824Q1MAX/NOPB SOIC D 14 2500 367.0 367.0 35.0

LMV824Q1MTX/NOPB TSSOP PW 14 2500 367.0 367.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 22-Sep-2017

Pack Materials-Page 3

www.ti.com

PACKAGE OUTLINE

TYP

0.22

0.08

0.25

3.0

2.6

2X 0.95

1.9

1.45 MAX

TYP

0.15

0.00

5X 0.5

0.3

TYP

0.6

0.3

TYP

1.9

3.05

2.75

1.75

1.45

(1.1)

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

0.2 C A B

INDEX AREA

PIN 1

GAGE PLANE

SEATING PLANE

0.1 C

SCALE 4.000

www.ti.com

EXAMPLE BOARD LAYOUT

0.07 MAX

ARROUND 0.07 MIN

ARROUND

5X (1.1)

5X (0.6)

(2.6)

(1.9)

2X (0.95)

(R0.05) TYP

4214839/C 04/2017

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

NOTES: (continued)

4. Publication IPC-7351 may have alternate designs.

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

SYMM

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

PKG

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

DEFINED

EXPOSED METAL

METAL

SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

EXPOSED METAL

www.ti.com

EXAMPLE STENCIL DESIGN

(2.6)

(1.9)

2X(0.95)

5X (1.1)

5X (0.6)

(R0.05) TYP

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

7. Board assembly site may have different recommendations for stencil design.

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

SYMM

PKG

www.ti.com

PACKAGE OUTLINE

TYP

0.22

0.08

0.25

3.0

2.6

2X 0.95

1.9

1.45 MAX

TYP

0.15

0.00

5X 0.5

0.3

TYP

0.6

0.3

TYP

1.9

3.05

2.75

1.75

1.45

(1.1)

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES:

1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing

per ASME Y14.5M.

2. This drawing is subject to change without notice.

3. Refernce JEDEC MO-178.

0.2 C A B

INDEX AREA

PIN 1

GAGE PLANE

SEATING PLANE

0.1 C

SCALE 4.000

www.ti.com

EXAMPLE BOARD LAYOUT

0.07 MAX

ARROUND 0.07 MIN

ARROUND

5X (1.1)

5X (0.6)

(2.6)

(1.9)

2X (0.95)

(R0.05) TYP

4214839/C 04/2017

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

NOTES: (continued)

4. Publication IPC-7351 may have alternate designs.

5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

SYMM

LAND PATTERN EXAMPLE

EXPOSED METAL SHOWN

SCALE:15X

PKG

SOLDER MASK

OPENING

METAL UNDER

SOLDER MASK

DEFINED

EXPOSED METAL

METAL

SOLDER MASK

OPENING

NON SOLDER MASK

DEFINED

(PREFERRED)

SOLDER MASK DETAILS

EXPOSED METAL

www.ti.com

EXAMPLE STENCIL DESIGN

(2.6)

(1.9)

2X(0.95)

5X (1.1)

5X (0.6)

(R0.05) TYP

SOT-23 - 1.45 mm max heightDBV0005A

SMALL OUTLINE TRANSISTOR

4214839/C 04/2017

NOTES: (continued)

6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate

design recommendations.

7. Board assembly site may have different recommendations for stencil design.

SOLDER PASTE EXAMPLE

BASED ON 0.125 mm THICK STENCIL

SCALE:15X

SYMM

PKG

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semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers

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and that proper product selection is at Designers’ own risk. Designers are solely responsible for compliance with all legal and regulatory

requirements in connection with such selection.

Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer’s non-

compliance with the terms and provisions of this Notice.

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

Mouser Electronics

Authorized Distributor

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Texas Instruments:

LMV822Q1MMX/NOPB LMV822Q1MM/NOPB