StrongIRFETTM IRFR7546PbF IRFU7546PbF HEXFET(R) Power MOSFET Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters D VDSS 60V RDS(on) typ. max 6.6m ID (Silicon Limited) 71A ID (Package Limited) 56A G S 7.9m D Benefits Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Lead-free, RoHS compliant S G IRFR7546PbF D-Pak IRFU7546PbF I-Pak 20 S Source Orderable Part Number IRFR7546PbF IRFR7546TRPbF IRFU7546PbF 80 ID = 43A Limited by package 15 T J = 125C 10 5 T J = 25C 0 60 40 20 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 D Drain Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tube 75 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) Package Type S D I-Pak IRFU7546PbF D-Pak IRFR7546PbF G Gate Base part number G www.irf.com (c) 2014 International Rectifier 25 50 75 100 125 150 175 T C , Case Temperature (C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF Absolute Maximum Rating Symbol ID @ TC = 25C ID @ TC = 100C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics Max. 71 50 Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance A 56 280 99 0.66 20 IDM PD @TC = 25C Symbol Parameter EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current Repetitive Avalanche Energy EAR Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient (PCB Mount) RJA Junction-to-Ambient RJA Units W W/C V -55 to + 175 C 300 Max. 120 178 Units mJ A mJ See Fig 15, 16, 23a, 23b Typ. --- --- --- Min. 60 --- --- --- 2.1 --- --- --- --- --- Max. 1.52 50 110 Units C/W Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 47 --- mV/C Reference to 25C, ID = 1mA 6.6 7.9 m VGS = 10V, ID = 43A 8.5 --- VGS = 6.0V, ID = 21A --- 3.7 V VDS = VGS, ID = 100A --- 1.0 VDS = 60V, VGS = 0V A --- 150 VDS = 60V,VGS = 0V,TJ =125C --- 100 VGS = 20V nA --- -100 VGS = -20V 1.5 --- Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 130H, RG = 50, IAS = 43A, VGS =10V. ISD 43A, di/dt 1020A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25C, L = 1mH, RG = 50, IAS = 19A, VGS =10V. 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Min. 56 --- --- --- --- --- --- Typ. --- 58 14 18 26 8.1 28 td(off) Turn-Off Delay Time --- 36 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) --- --- --- --- 20 3020 280 180 --- 290 --- VGS = 0V, VDS = 0V to 48V --- 370 --- VGS = 0V, VDS = 0V to 48V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units --- --- 71 --- --- 280 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage --- --- 1.2 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current --- --- --- --- --- --- 12 26 29 22 30 1.5 --- --- --- --- --- --- Coss eff.(ER) Coss eff.(TR) Max. Units Conditions --- S VDS = 25V, ID = 43A 87 ID = 43A --- VDS = 30V nC --- VGS = 10V --- --- VDD = 30V --- ID = 43A ns --- RG= 2.7 VGS = 10V --- --- --- --- pF VGS = 0V VDS = 25V = 1.0MHz, See Fig.7 Diode Characteristics Symbol IS ISM 3 www.irf.com (c) 2014 International Rectifier A V D G S TJ = 25C,IS = 43A,VGS = 0V V/ns TJ = 175C,IS = 43A,VDS = 60V TJ = 25C VDD = 51V ns TJ = 125C IF = 43A, TJ = 25C di/dt = 100A/s nC TJ = 125C A TJ = 25C Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 10 4.5V BOTTOM 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 1 1 0.1 1 10 0.1 100 V DS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 T J = 175C 10 T J = 25C 1 VDS = 25V 60s PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 7.0 ID = 43A V GS = 10V 2.0 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100120140160180 8.0 TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics 100000 V GS, Gate-to-Source Voltage (V) ID= 43A 10000 Ciss 1000 Fig 6. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd C, Capacitance (pF) 100 2.5 0.1 Coss Crss 100 12.0 10.0 V DS= 48V 8.0 V DS= 12V V DS= 30V 6.0 4.0 2.0 0.0 1 10 100 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 10 Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) www.irf.com (c) 2014 International Rectifier 0 10 20 30 40 50 60 70 80 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 175C TJ = 25C 10 1 100sec 100 1msec Limited by package OPERATION IN THIS AREA LIMITED BY RDS(on) 10 1 V GS = 0V 0.1 DC 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 V SD, Source-to-Drain Voltage (V) 10 VDS, Drain-toSource Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 0.5 78 Id = 1.0mA 76 0.4 74 Energy (J) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 10msec Tc = 25C Tj = 175C Single Pulse 72 70 0.3 0.2 68 0.1 66 0.0 64 -10 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C ) 10 20 30 40 50 60 70 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m) 0 Fig 12. Typical Coss Stored Energy 40 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS =10V 30 20 10 0 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF Thermal Response ( Z thJC ) C/W 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 120 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 43A 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com (c) 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figure 14) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF 12 3.5 10 IF = 28A V R = 51V TJ = 25C 3.0 8 TJ = 125C 2.5 IRRM (A) V GS(th) , Gate threshold Voltage (V) 4.0 ID = 100A ID = 250A 2.0 4 ID = 1.0mA ID = 1.0A 1.5 2 1.0 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000 TJ , Temperature ( C ) diF /dt (A/s) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 12 200 IF = 43A V R = 51V 10 IF = 28A V R = 51V TJ = 25C TJ = 125C TJ = 25C TJ = 125C 150 QRR (nC) 8 IRRM (A) 6 6 100 4 50 2 0 0 0 200 400 600 800 1000 0 200 diF /dt (A/s) 400 600 800 1000 diF /dt (A/s) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt 200 IF = 43A V R = 51V TJ = 25C 150 QRR (nC) TJ = 125C 100 50 0 0 200 400 600 800 1000 diF /dt (A/s) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 24a. Switching Time Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com (c) 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 2001 IN THE ASSEMBLY LINE "A" PART NUMBER INTERNATIONAL RECTIFIER LOGO Note: "P" in assembly line position indicates "Lead-Free" IRFR120 12 116A 34 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 16 LINE A "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFR120 12 ASSEMBLY LOT CODE 34 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) YEAR 1 = 2001 WEEK 16 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches)) I-Pak (TO-251AA) Part Marking Information EXAMPLE: THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "A" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFU120 119A 56 78 ASSEMBLY LOT CODE Note: "P" in assembly line position indicates Lead-Free" DATE CODE YEAR 1 = 2001 WEEK 19 LINE A OR INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFU120 56 ASSEMBLY LOT CODE 78 DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 1 = 2001 WEEK 19 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 IRFR/U7546PbF Qualification Information Industrial (per JEDEC JESD47F) Qualification Level Moisture Sensitivity Level D-Pak MSL1 I-Pak N/A Yes RoHS Compliant Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability/ Applicable version of JEDEC standard at the time of product release. Revision History Date 11/7/2014 Comment Updated EAS (L =1mH) = 178mJ on page 2 Updated note 10 "Limited by TJmax, starting TJ = 25C, L = 1mH, RG = 50, IAS = 19A, VGS =10V" on page 2 Updated package outline on page 9 & 10 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRFR7546PBF IRFR7546TRPBF IRFU7546PBF