GaAs IRED & PHOTO-TRANSISTOR TLP 5 2 3, - 2, -4 (TLP523) PROGRAMMABLE CONTROLLERS Unit in mm DC-OUTPUT MODULE TLP523 Weight :0.26g SOLID STATE RELAY 43 The TOSHIBA TLP523, -2 and -4 consists of a gallium arsenide BE infrared emitting diode coupled with a silicon, darlington connected, asa to2s 7924025 phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP523-2 offers two isolated channels in a eight lead plastic ate ols z +01 & 8.25 * 08 8 DIP package, while the TLP523-4 provide four isolated channels per es | taints | package. Current Transfer Ratio : 500% (Min.) (p= 1mA) JEDEC _ @ Isolation Voltage : 2500Vrms (Min.) EIAJ _ @ Collector-Emitter Voltage : 55V (Min.) TOSHIBA 11-5B1 @ Leakage Current : 10s:A (Max.) (Ta = 85C) BLRODS2 Weight :0.54g @ UL Recognized : UL1577, File No. E67349 - PIN CONFIGURATIONS (TOP VIEW) TLP523 TLP523-2 TLP523-4 1 04 1 ek 4 4 2 05 1.86~8.80 2c N3 2 12. $440.25 1: ANODE 3 JEDEC _ 3: EMITTER 4 4 : COLLECTOR TOSHIBA 11-10C1 1,3: ANODE TLP523-4 Weight :1.1g 2,4: CATHODE 16 9 5, 7: EMITTER 6, 8 : COLLECTOR - Hi 3 19,820.25 ; 3 1,620.26 - 0.26 9.5, 1 yb 1,3, 5,7 : ANODE 2, 4, 6, 8 : CATHODE 9,11, 138,15 : EMITTER 10, 12, 14, 16 : COLLECTOR JEDEC EIAJ _ TOSHIBA 11-20A1 319 TLP523, -2, -4 (TLP523) MAXIMUM RATINGS (Ta = 25C) RATING CHARACTERISTIC SYMBOL LP 593 TLP523-2 UNIT TLP523-4 Forward Current Ip 60 50 mA a Forward Current Derating Alp/C ~0.7 (Ta2 39C) 0.5 (Ta= 25C) mA /C 4 /Pulse Forward Current Ipp 1(1004s pulse, 100pps) A Reverse Voltage VR 5 v Collector-Emitter Voltage VCEO 55 Vv pe |[Emitter-Collector Voltage VECO 0.3 v E Collector Current Ic 150 mA f /Collector Power Dissipation 5 ( Cireuit) P Po 150 100 mW Derating 1 Cireuit(Tas25:c)) | 2PC!C ahs oe mw/C Operating Temperature Range Topr 55~100 C Storage Temperature Range Taig 55~150 C Lead Solder Temperature (10 s) T'sol 260 C Total Power Dissipation Pp 250 150 mW (ee ee Dissipation Derating aPp/c 25 15 mW /C Isolation Voltage (Note 1) BVs 2500 (AC, 1 min., RHS 60%) Vrms Note 1 : Device considered a two terminal device : DETECTOR side pins shorted together. RECOMMENDED OPERATING CONDITIONS CHARACTERISTIC SYMBOL | MIN. | TYP. |MAX.| UNIT Supply Voltage Vee 5 24 v Forward Current Ip 16 20 | mA Operating Temperature Topr _o5 | _ 85 C Range 320 LED side pins shorted together andTLP523, -2,-4 (TLPS23) ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Q Forward Voltage VP Ip=10mA 1.0 1.15) 1.3 Vv | Reverse Current IR VR=5V _ 10 | vA Capacitance Cr V=0, f=1MHz _ 30; pF Collector-Emitter & Breakdown Voltage V(BR)CEO |IC=1mA 55 ~ ~ Vv ES Vor=24V = 10] 200 | nA B Collector Dark Current IcEO CE = B Vcr =24V, Ta=85C 0.5] 10 | pA |Capacitance Collector a pe to Emitter Ccr V=0, f=1MHz _ io; pF Current Transfer Ratio Ic/Ip |Ip=i1mA, VcR=1V 500 | 2000} %o Q |Collector-Emitter eo = = a Saturation Voltage VcE(sat) |1C=50mA, Ip=10mA 1 Vv Capacitance Input = = _ F |to Output Cs Vg=0, f=1MHz 0.8 p Isolation Resistance Rg Vg=500V 5x10!% 10!) 2 SWITCHING CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN, | TYP. | MAX. | UNIT Turn-on Time ton Vcc=10V, Rp=1809 _ 3 _ pS Turn-off Time tOFF Ip=16mA _ 80 _ us SWITCHING TIME TEST CIRCUIT Ip RL | | Tp O Vcc =F OF VcE VCE \ av 1V ton 321 TLP523, -2, -4 (TLP523) - 200 z a if = a Os rLP: & EE oot LPsza oO as 2 a TLP523 By a On ta fm 120 -2,- 8 TLP523 -2, 4 za 35 2 tw 8g s Bu ree) ae rs) ao a < za z za 40 a a 2 < < 0 0 -2. 0 2 28440 GO 80 100 120 200 2 #40 60 80 100 120 AMBIENT TEMPERATURE Ta (CC) AMBIENT TEMPERATURE Ta (CC) lpp - DR < = = | PULSE WIDTHs 100p5 & Ta =25C < & & 2 E 2 Z 2 a 5 Fe 2 5 < Oo = 2 o oo S < oe = >] iq 3 g Ou + 7 o 3. 10 3 10 3. (10 3 10 1 DUTY CYCLE PATIO. DR 0.6 9.8 10 12 4 16 18 FORWARD VOLTAGE Vp (V) 4Ve/ 4Ta Ip Ipp VFP 1000 - wy z = : an ze E500 ES SE Bm a =e = 100 Bis gq a ~ co zB 50 gn G30 be be) Q be a 2 < 2 = 10 = Q5 we 2 2 f a Lum i Er oS 5 .| PULSE WIDTHS loys ZG wo gf. REPETITIVE FREQUENCY 38 8 =100Hz R Ta =25C . \ 0.4 0. 1 3 10 30 06 1.0 14 18 22 26 3 FORWARD CURRENT Ip (nA) PULSE FORWARD VOLTAGE Vpp () 322 TLP523, -2, -4 (TLP523) Ic Ip Ic - IF 300 VoE=1L2V Ta =28C < 100 < E E SAMPLE 1 2 50 SAMPLE 1 2 E30 5 2 2 ir ir 2 a oO oO m% 10 mm 2 g 8 E =] oa a) ay o oO 3 ao 1 0.3 1 3 10 30 0.3 1 3 10 30 FORWARD CURRENT Ip (mA) FORWARD CURRENT iy (mA) VCE(sat) Ta Ic Ta TEST CONDITION A: 1=100mA, Ip=10mA TEST CONDITION i Ip=lOmA, or=1.2V = B: 1=50mA, Ip=10mA i Iip=l0mA, Vop=1.0V > C:I=10mA, lp=1mA iIps2mA, VoRg=l.2V 3 D: Ic=1mA, Ip=0.6mA :Ip=2mA, Vop=1.0Vv 8 16 iipeimA, Vog=1.2V + iIpsimA, Vop=LaVv oa Q ia z TEST CONDITION fe a 8 . , 1.2 z TEST CONDITION A 5 iS E 2 a 3 F 5 wy 0. B oe oO my a 4 E 3 = 06 5 tod 4 2 5 04 a 3 2 8 02 0 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) 323 TLP523, -2, -4 (74P523) (mA) Ic COLLECTOR CURRENT SWITCHING TIME (ys) Ic - VCE SAMPLE 1 2 Ip=imA Ta=25C 0.3 1 3 10 30 COLLECTOR-EMITTER VOLTAGE Vop () SWITCHING TIME Ta =26C Voc=10V Ip torr Up = 10mA) torr (lps imA) ton (Ip=imA}~ ton Up=10mA) a0 100 300 ik 3k LOAD RESISTANCE Ry, (0) 10k (mA? I COLLECTOR CURRENT ) ( Ic COLLECTOR CURRENT 324 a 04 Ic VCE Ip=10mA 0.8 1.2 16 2.0 24 28 3.2 COLLECTOR-EMITTER VOLTAGE Veg (V) SAFE OPERATING AREA 10mg 10ms%< 100ms 100ms% DC OPERATING Ta = 26C *& SINGLE NONREPETITIVE PULSE Ta =25C ---- Ta=60C 1 0.5 1 3 10 30 COLLECTOR-EMITTER VOLTAGE Veg (V)