MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# KTC3202 Features * * * * General Purpose Application Switching Application Excellent hFE Linearity: hFE(2)=25(Min. ) at V CE=6V, IC=400mA Complementary to KTA1270 Pin Configuration Bottom View C B Epitaxial Planar NPN Transistor TO-92 E A E Maximum Ratings Symbol V CEO V CBO V EBO IC IE PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Operating Junction Temperature Storage Temperature Rating 30 35 5.0 500 500 625 -55 to +150 -55 to +150 Unit V V V mA mA mW O C O C B C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units --- --- 0.1 uAdc --- --- 0.1 uAdc 400 --- --- --- OFF CHARACTERISTICS ICBO IEBO Collector Cutoff Current (VCB=35Vdc,IE =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) D ON CHARACTERISTICS DC Current gain(1) 70 --(IC=100mAdc, VCE=1.0Vdc) hFE-2 DC Current gain(2) 25 --(IC=400mAdc, VCE=6.0Vdc) V CE(sat) Collector-Emitter Saturation Voltage --0.1 (IC=100mAdc, IB =10mAdc) V BE Base- Emitter Voltage --0.8 (V CE=1.0Vdc, IC=100mAdc) fT Transistor Frequency --300 (VCE=6.0Vdc, IC=20mAdc) Cob Collector Output Capacitance --7.0 (VCB=6.0Vdc, IE =0, f=1.0MHz) (1) hFE (1) Classification O: 70~140, Y: 120~240, GR: 200~400 hFE (2) Classification O:25Min., Y: 40Min. hFE-1 0.25 Vdc 1.0 Vdc --- MHz --- pF G DIMENSIONS DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC KTC3202 h I C - VCE COMMON EMITTER Ta=25 C 400 4.0 6.0 3.0 300 2.0 200 1.0 0.5 100 0 0 0 1 3 100 Ta=-25 C Ta=25 C 50 VCE =1V 30 COMMON EMITTER 4 10 5 0.5 1 3 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 25 C -25 Ta= Ta= 100 C C 500 300 Ta= BASE CURRENT I B (A) VCE =6V 50 30 10 5 0 0.2 0.4 0.6 0.8 1.0 BASE-EMITTER VOLTAGE VBE (V) 1 0.5 0.3 0.1 0.01 0.5 1 3 COLLECTOR POWER DISSIPATION P C (mW) 300 200 100 100 125 150 10 30 100 1K COLLECTOR CURRENT I C (mA) 400 75 300 Ta=25 C Ta=25 C 0.03 500 50 1k Ta=100 C 600 25 300 0.05 700 0 100 COMMON EMITTER I C /I B =10 Pc - Ta 0 30 VCE(sat) - I C COMMON EMITTER 100 10 COLLECTOR CURRENT I C (mA) I B - VBE 1k VCE =6V Ta=100 C COLLECTOR-EMITTER VOLTAGE VCE (V) 2k C 300 I B =0.1mA 2 -I 500 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 500 FE 175 AMBIENT TEMPERATURE Ta ( C) www.mccsemi.com