KTC3202
Epitaxial Planar
NPN Transistor
Features
โข General Purpose Application
โข Switching Application
โข Excellent hFE Linearity: hFE(2)=25(Min.) at VCE=6V, IC=400mA
โข Complementary to KTA1270
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 35 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current 500 mA
IE Base Current 500 mA
PC Collector Power Dissipation 625 mW
TJ Operating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
OFF CHARACTERISTICS
ICBO Collector Cutoff Current
(VCB=35Vdc,IE=0) --- --- 0.1 uAdc
IEBO Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- --- 0.1 uAdc
ON CHARACTERISTICS
hFE-1 DC Current gain(1)
(IC=100mAdc, VCE=1.0Vdc) 70 --- 400 ---
hFE-2 DC Current gain(2)
(IC=400mAdc, VCE=6.0Vdc) 25 --- --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=10mAdc) --- 0.1 0.25 Vdc
VBE Base- Emitter Voltage
(VCE=1.0Vdc, IC=100mAdc) --- 0.8 1.0 Vdc
fT Transistor Frequency
(VCE=6.0Vdc, IC=20mAdc) --- 300 --- MHz
Cob Collector Output Capacitance
(VCB=6.0Vdc, IE=0, f=1.0MHz) --- 7.0 --- pF
(1) hFE(1) Classification O: 70~140, Y: 120~240, GR: 200~400
hFE(2) Classification O:25Min., Y: 40Min.
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21201 Itasca Street Chatsworth
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MCC
www.mccsemi.com
Pin Configuration
Bottom View C B E
TO-92
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
B
C
D
G