2SK3693-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Symbol Ratings Unit 450 V DS V VDSX *5 450 V Equivalent Continuous drain current ID 17 A Pulsed drain current ID(puls] 68 A Gate-source voltage VGS 30 V Repetitive or non-repetitive IAR *2 17 A Maximum Avalanche Energy EAS *1 221.9 mJ Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/s Peak Diode Recovery dV/dt dV/dt *3 5 kV/s Gate(G) Max. power dissipation PD Ta=25C 2.16 W Tc=25C 80 Operating and storage Tch +150 C -55 to +150 temperature range Tstg C Isolation Voltage Viso *6 2000 V *1 L=1.41mH, Vcc=45V, Tch=25C See to Avalanche Energy Graph *2 Tch < =150C *3 IF< = BVDSS, Tch < = 150C *4 VDS<= 450V *5 VGS=-30V *6 f=6-Hz, t=60sec. = -ID, -di/dt=50A/s, Vcc < circuit schematic Drain(D) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=450V VGS=0V Tch=25C Tch=125C VDS=360V VGS=0V VGS=30V VDS=0V ID=8.5A VGS=10V ID=8.5A VDS=25V Min. 7 VDS =25V VGS=0V f=1MHz VCC=300V ID=8.5A VGS=10V RGS=10 V CC=225V ID=17A VGS=10V L=1.41mH Tch=25C IF=17A VGS=0V Tch=25C IF=17A VGS=0V -di/dt=100A/s Tch=25C Typ. 450 3.0 Max. 5.0 25 250 100 0.38 0.29 14 1275 1900 200 300 9.5 14 27 40 27 40 48 72 7 11 33 50 13.5 20.3 10.5 16 17 1.20 0.57 6.5 1.80 Units V V A nA S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.563 58.0 Units C/W C/W 1 2SK3693-01MR FUJI POWER MOSFET Characteristics 100 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C Allowable Power Dissipation PD=f(Tc) 20V 10V 30 80 25 ID [A] PD [W] 60 8V 20 7.5V 15 40 10 7.0V 20 5 VGS=6.5V 0 0 0 25 50 75 100 125 0 150 4 8 12 16 20 VDS [V] Tc [C] Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 10 gfs [S] ID[A] 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 1 VGS[V] 0.9 10 ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C 1.0 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V 0.9 0.8 VGS=6.5V 7.0V 7.5V 0.8 0.7 8V RDS(on) [ ] RDS(on) [ ] 0.7 0.6 0.5 10V 20V 0.4 0.6 0.5 max. 0.4 typ. 0.3 0.2 0.3 0.1 0.0 0.2 0 5 10 15 20 25 30 35 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] http://store.iiic.cc/ 2 2SK3693-01MR FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 7.0 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=17A,Tch=25C 6.5 6.0 12 5.5 Vcc= 90V 225V 360V max. 10 4.5 4.0 3.5 min. 3.0 8 VGS [V] VGS(th) [V] 5.0 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 Tch [C] 10 0 10 30 35 40 45 50 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C Ciss 10 -1 IF [A] 1 C [nF] 10 25 Qg [nC] Coss 1 10 -2 10 -3 Crss 10 -1 10 0 10 1 10 2 10 0.1 0.00 3 0.25 0.50 0.75 VDS [V] 10 3 1.00 1.25 1.50 1.75 2.00 VSD [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10 600 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=45V IAS=7A tf 10 500 td(off) 2 400 EAS [mJ] t [ns] IAS=11A td(on) 10 1 300 IAS=17A 200 tr 100 10 0 0 10 -1 10 0 10 1 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 2SK3693-01MR Avalanche Current I AV [A] 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=45V Single Pulse 10 1 10 0 10 FUJI POWER MOSFET -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4