IRF230/231 [232/233 FEATURES . Low Rpsjon) Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low inpit capacitance Extended sate operating area Improved high temperature reliability TO-3 package (Standard) -PRODUCT SUMMARY ~~ Part Number Vps Rosion) Ib IRF230 200V | 0.42 9.0A IRF231 150V 0.42 9.0A {RF232 200V 0.69 8.0A IRF233 150V 0.69 . 8.0A MAXIMUM RATINGS . 42_ SAMSUNG, "SEMICONDUCTOR. INC, tial DEPP PIb4L4e OOOSO TT. - NCHANNEL 88D POWER MOSFETS TO-3 Characteristic Symbol IRF230 IRF231 (RF232 IRF233 Unit Drain-Source Voltage (1) Voss 200 150 200 150 Vdc Drain-Gate Voltage (Ras=1.OM2) (1) Vocr 200 150 200 150 Vde Gate-Source Voltage ~ Vas +20 Vde Continuous Drain Current Tc=25C lo 9.0 9.0 8.0 8.0 Adc Continuous Drain Current Tc=100C lb 6.0 6.0 5.0 5.0 Adc Drain CurrentPulsed (3) 'bm _ 86 36 32 32 Adc Gate CurrentPulsed : lem 1.56 Adc Fotal Power Dissipation @ To=25C Pp 75 Watts Derate above 25C 0.6 _ WiC Proton Temperature Range Ty, Tstg 56 to 160 c purposes, 1/8" trom case for 5 secondo | Tt 300 : a Notes: (1) Tu=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature cee SAMSUNG SEMICONDUCTOR 93 05094 "D TSF tL.7964142 SAMSUNG SEMICONDUCTOR INC _98D_ 05095 _D T-3a-Il__ = , Soe DEE 79b4i42 0005095 ? B y-cHAnnet 1RF230/231/232/233 . POWER MOSFETS ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) -Characteristic Symbol} Type |Min{ Typ | Max [Units Test Conditions neonp 200] | | v- |Vas=ov Drain-Source Breakdown BVpss . . Voltage: IRF231 160 - Vv {i =260, IRF233 7 p= 260uA Gate Threshold Voltage" Vestn | ALL | 2.0] | 4.0 V lVos=Vas, lp>=250ynA " |Gate-Source Leakage Forward] less {| ALL | | | 100] nA |Ves=20V Gate-Source Leakage Reverse! lass ALL | | |-100} nA |Ves=~-20V Zero Gate Voltage loss au (to 260 uA iVos=Max. Rating, Ves=OV Drain Current | | 1000] pA |Vps=Max. RatingX0.8, Vas=0V, To=125C | weeseloo| | - | On-State Drain-Source toyon) Vos>tojon)XRosjor} max., Vas=10V Current (2) : IRF232 iRF233|%; | | A , ; : . eet |0.25] 0.4 | a Static Drain-Source On-State Rosjon) Ves=10V, Ip=5.0A Resistance (2) IRF232 a , . _ |irF2aa| | 4) %6 Forward Transconductance (2)| dis ALL [3.0;4.6] GB Vos>Ipon) XRosion) max., ID>=5.0A Input Capacitance Ciss ALL | |720] 800 | pF Output Capacitance Coss ALL | | 250; 450 | pF |Vas=OV, Vps=25V, f=1.OMHz Reverse Transfer Capacitance| Cres ALL | | 60] 150 | pF Turn-On Delay Time tajon) | ALL | | | 30 | ns Rise Time t | ALL | | | 50 | ns |oo=0-5BVoss, Ib=5.0A, Zo=15 0 - (MOSFET switching times are essentially Tum-Off Delay Time taom | ALL | | | 50 | PS Jindependent of operating temperature.) Fall Time tr ALL | }| | 40 | ns Total Gate Charge . (Gate-Source Plus Gate-Drain)} Go | ALL | | 19} 30 | NC ivgs=tov, lb=12A, Vos=0.8 Max. Rating (Gate charge is essentially independent of Gate-Source Charge Qos ALL | j;5.0] | nc operating temperature.) Gate-Drain (Miller) Charge Qga ALL | | 14 _ nc THERMAL RESISTANCE Junction-to-Case Rituc ALL | } | 1.67 | KAW .|Case-to-Sink Rincs ALL | j 0.1 | /W {Mounting surface flat, smooth, and greased Junction-to-Ambient Rina ALL | j} 30 | K/W |Free Air Operation Notes: (1) Tj=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature cee SAMSUNG SEMICONDUCTOR 9464142 SAMSUNG _SEMICONDUCTOR_INC 98D 05096 0 T"39-II pasa De Bf razuaue oooso%6 3 ff NCHANNEL IRF230/231/232/233 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Symbol} Type |Min| Typ | Max |Units| - Test Conditions . InF230/ | | gol a Continuous Source Current |. Is IRF231 . : Body Diode . {ody Diode} TReese| | | 8.0 | A [Modified MOSFET symbol 0 : showing the integral IRF230| _ | _ | 36 | a jreverse P-N junction rectifier S$ ; Pulse Source Current ts IRF231 i (Body Diode) (3) - IRF232) | | go] a - IRF233 REoSt j{ 120 V |Tc=25C, Is=9.0A, Ves=OV Diode Forward Voltage (2) Vsp 7 . eeoaa| | | 1-8 | V |To=25C, ts=8.0A, Vas=OV Reverse Recovery Time tre AL | |4so] ns |Ty=150C, Ir=9.0A, die/dt=100A/us Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300yus, Duty Cycle<2% {3) Repetitive rating: Pulse width limited by max. junction temperature 1 a > au ra u & & = = 3 =< 5 & c a 5 oe. uy z Tye 125C a 2 j < 7 e a T 27 9 . 20 80 400 1 1 2 3 4 5 7 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transter Characteristics g g Gi & = 5 s = 5 & wy Ww E & > R 5 6 z z z 4 5 & 6 4 T=180C Peace 1 67 SINGLE PULSE - Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO-SOQURCE VOLTAGE (VOLTS) Typical Saturation Characteristics . Maximum Safe Operating Area sus G5 SAMSUNG SEMICONDUCTOR 9 wsety LUE IRF230/231 12321233 EO ~- 2984 142 SAMSUNG _SEMICONDUCTOR ING. a ee :48 DEB rse4iua O005057 o jo N-CHANNEL | 98D 05097 __ _D 0734- Ah POWER MOSFETS THERMAL IMPEDANCE (PER UNIT) ZensctWRinsc, NORMALIZED EFFECTIVE TRANSIENT . 0.01 19 6 10% 2 5 2 t Thermal | gfs, TRANSCONDUCTANCE (SIEMENS) Ip, ORAIN CURRENT (AMPERES) Typical Transcounductance Vs. Drain Current 1.26 1.15 (NORMALIZED) oes BVpss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE 0.75 -40 oO, 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature 40? Ipn, REVERSE DRAIN CURRENT (AMPERES) Rosion, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) i _ 1. Duty Factor. p=, b Par Unit Base=Ryc=1.67 Deg Tar Te=PouZax: fi). 2 5 10" 2 5 1 2 5 10 th. SQUARE WAVE PULSE DURATION {SECONDS} Maxi Effective T i to-Case Vs. Pulse Ouration Vsp, SOURCE-TO-ORAIN VOLTAGE (VOLTS} Typical SourceDrain Diode Forward Voltage 2.5 2.0 Ves 10V Os -40 a a0 80 120 180 Ts, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature GE samsunc SEMICONDUCTOR 967964142 SAMSUNG SEMICONDUCTOR_ING 98D 05098 _ _O T-3B4+t! pace TB DEQ 7Ib414e goosow 2 ff ----- - CHANNEL IRF230/231/232/233 POWER MOSFETS Th | a 26 Voas=0 f=i MHz 1600 Gree <p g g : 8 8 4 s 2 oe >. 3 j | 2 s ib i 3 Cass 2 ors 0 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-To-Source Voltage o IRF 230.1 IRF 231.9 fp, DRAIN CURRENT (AMPERES) Rosion: DRAIN-TO-SOURCE ON RESISTANCE (OHMS) nu tp, DRAIN CURRENT (AMPERES) To, CASE TEMPERATURE (C) \ Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature 70 60 Pp, POWER DISSIPATION (WATTS) 20 60 100 Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve 80 tie samsunc SEMICONDUCTOR 97