TIP140/TIP141/TIP142 NPN Epitaxial Silicon Darlington Transistor * * * * Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145/146/147 Equivalent Circuit C B TO-3P 1 R1 1.Base 2.Collector 3.Emitter R1 @ 8kW R2 @ 0.12k W Absolute Maximum Ratings* Symbol VCBO R2 E T a = 25C unless otherwise noted Collector-Base Voltage Parameter : TIP140 : TIP141 : TIP142 Ratings 60 80 100 Units V V V 60 80 100 V V V VCEO Collector-Emitter Voltage : TIP140 : TIP141 : TIP142 VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 10 A 15 A ICP Collector Current (Pulse) IB Base Current (DC) 0.5 A PC Collector Dissipation (TC=25C) 125 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. (c) 2007 Fairchild Semiconductor Corporation TIP140/TIP141/TIP142 Rev. 1.0.0 www.fairchildsemi.com 1 TIP140/TIP141/TIP142 -- NPN Epitaxial Silicon Darlington Transistor October 2008 Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP140 : TIP141 : TIP142 Test Condition ICEO Collector Cut-off Current ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE DC Current Gain VCE = 4V, IC = 5A VCE = 4V, IC = 10A VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) VBE(on) IC = 30mA, IB = 0 Min. Typ. Max. Units V V V 60 80 100 : TIP140 : TIP141 : TIP142 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 mA mA mA : TIP140 : TIP141 : TIP142 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 1 1 1 mA mA mA 2 mA IC = 5A, IB = 10mA IC = 10A, IB = 40mA 2 3 V V Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V Base-Emitter On Voltage VCE = 4V, IC = 10A 3 tD Delay Time tR Rise Time tSTG Storage Time VCC = 30V, IC = 5A IB1 = 20mA, IB2 = -20mA RL = 6W tF Fall Time 1000 500 V 0.15 ms 0.55 ms 2.5 ms 2.5 ms * Pulse Test: Pulse Width300ms, Duty Cycle2% (c) 2007 Fairchild Semiconductor Corporation TIP140/TIP141/TIP142 Rev. 1.0.0 www.fairchildsemi.com 2 TIP140/TIP141/TIP142 -- NPN Epitaxial Silicon Darlington Transistor Electrical Characteristics* Ta=25C unless otherwise noted IB = 2000mA IC[A], COLLECTOR CURRENT 9 IB = IB = 1800mA 8 IB = 1600mA 7 IB = 1400mA mA A 1200 00m = 10 IB 100k IB = 800mA VCE = 4V IB = 600mA hFE, DC CURRENT GAIN 10 IB = 400mA 6 5 4 IB = 200mA 3 2 10k 1k 100 1 0 0 1 2 3 4 10 0.1 5 1 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 IC=500I B f=0.1MHz Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 VBE(sat) 1 VCE (sat) 0.1 0.01 0.1 1 10 100 10 100 1 IC[A], COLLECTOR CURRENT 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 150 PC[W], POWER DISSIPATION 10 DC IC[A], COLLECTOR CURRENT 125 1 TIP140 TIP141 TIP142 0.1 1 10 100 75 50 25 0 1000 V CE[V], COLLECTOR-EMITTER VOLTAGE 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c) 2007 Fairchild Semiconductor Corporation TIP140/TIP141/TIP142 Rev. 1.0.0 100 www.fairchildsemi.com 3 TIP140/TIP141/TIP142 -- NPN Epitaxial Silicon Darlington Transistor Typical Characteristics TIP140/TIP141/TIP142 -- NPN Epitaxial Silicon Darlington Transistor Package Dimension (TO-3P) 5.00 4.60 15.80 15.40 1.65 1.45 5.20 4.80 (R0.50) 20.10 19.70 18.90 18.50 3.70 3.30 (1.85) 2.20 1.80 2.60 2.20 20.30 19.70 3.20 2.80 0.55 1.20 0.80 1 3 5.45 0.75 0.55 5.45 (R0.50) NOTES: A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONING AND TOLERANCING PER ASME14.5 1973. D) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. E) DRAWING FILE NAME: TO3P03AREV2. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 (c) 2008 Fairchild Semiconductor Corporation TIP140/TIP141/TIP142 Rev. A1 www.fairchildsemi.com 5 TIP140/TIP141/TIP142 NPN Epitaxial Silicon Darlington Transistor TRADEMARKS