IXGP16N60B2D1 - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VCES TJ= 25°C to 150°C 600 V

VCGR TJ= 25°C to 150°C, RGE = 1MΩ600 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C40 A

IC110 TC= 110°C16 A

IF110 TC= 110°C11 A

ICM TC= 25°C, 1ms 100 A

SSOA VGE = 15V, TJ = 125°C, RG = 22Ω ICM = 32 A

(RBSOA) Clamped Inductive load VCE ≤ ≤

≤ ≤

≤ VCES

PCTC= 25°C 150 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

MdMounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.

FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

TL Maximum Lead Temperature for Soldering 300 °C

TSOLD 1.6mm (0.062 in.) from Case for 10s 260 °C

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS99178B(08/10)

HiPerFASTTM IGBTs

B2-Class High Speed

w/ Diode

VCES = 600V

IC110 = 16A

VCE(sat) ≤≤

≤≤

≤ 2.3V

IXGA16N60B2D1

IXGP16N60B2D1

IXGH16N60B2D1 tfi(typ) = 70ns

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC= 250μA, VCE = VGE 3.0 5.5 V

ICES VCE = VCES,VGE = 0V 25 μA

TJ = 125°C 1 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC = 12A, VGE = 15V, Note1 2.30 V

TJ = 125°C 1.65 V

TO-247 (IXGH)

GDS

CE

G = Gate C = Collector

E = Emitter Tab = Collector

TO-263 AA (IXGA)

GCE

TO-220AB (IXGP)

G

E

C (Tab)

Features

zOptimized for Low Conduction and

Switching Losses

zSquare RBSOA

zAnti-Parallel Ultra Fast Diode

zInternational Standard Packages

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zPower Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

zLamp Ballasts

http://store.iiic.cc/

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60B2D1 IXGP16N60B2D1

IXGH16N60B2D1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC = 12A, VCE = 10V, Note 1 8 S

Cies 675 pF

Coes VCE = 25V, VGE = 0V, f = 1MHz 70 pF

Cres 20 pF

Qg(on) 24 nC

Qge IC = 12A, VGE = 15V, VCE = 0.5 • VCES 5 nC

Qgc 13 nC

td(on) 18 ns

tri 20 ns

Eon 0.16 mJ

td(off) 73 ns

tfi 70 ns

Eoff 0.12 0.22 mJ

td(on) 17 ns

tri 20 ns

Eon 0.26 mJ

td(off) 140 ns

tfi 125 ns

Eoff 0.38 mJ

RthJC 0.83 °C/W

RthCK TO-220 0.50 °C/W

TO-247 0.21 °C/W

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Inductive load, TJ = 125°C

IC = 12A, VGE = 15V

VCE = 400V, RG = 22Ω

Note 2

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

Inductive load, TJ = 25°C

IC = 12A, VGE = 15V

VCE = 400V, RG = 22Ω

Note 2

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VF IF = 10A, VGE = 0V, Note 1 3.0 V

TJ = 125°C 1.7 V

IRM 2.5 A

trr 110 ns

trr 30 ns

RthJC 2.5 °C/W

IF = 12A, VGE = 0V,

-diF/dt = 100A/μs, VR = 100V, TJ = 125°C

IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V

http://store.iiic.cc/

IXGA16N60B2D1 IXGP16N60B2D1

IXGH16N60B2D1

Pins: 1 - Gate 2 - Collector

3 - Emitter

TO-220 (IXGP) Outline TO-247 (IXGH) AD Outline

1 = Gate

2 = Collector

3 = Emitter

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

TO-263 (IXGA) Outline

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side

http://store.iiic.cc/

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60B2D1 IXGP16N60B2D1

IXGH16N60B2D1

Fi g . 1. Ou tpu t C har ac ter i sti cs @ T

J

= 25ºC

0

4

8

12

16

20

24

00.5 11.522.53

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

9V

8V

10V

7V

11V

Fi g . 2. Exte n d ed Ou tpu t Ch ar ac ter i sti cs @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

100

0 5 10 15 20 25 30

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

8V

9V

11V

13V

12V

14V

10V

Fi g . 3. Ou tp ut C har act er i sti cs @ T

J

= 125º C

0

4

8

12

16

20

24

00.511.522.53

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

12V

9V

11V

8V

6V

10V

7V

Fig. 4. Dependence of V

CE(sat)

on

Junction T emperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

0255075100125150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 12A

I

C

= 6A

I

C

= 24A

Fi g . 5. C o l l ector -to -E mi tt er Vo l tag e vs.

Gate-to -Emi tter V o l tag e

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 24

A

T

J

= 25ºC

12

A

6

A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

4 5 6 7 8 9 10 11 12

V

GE

- Volts

I

C

- Amperes

T

J

= - 40ºC

25ºC

125ºC

http://store.iiic.cc/

IXGA16N60B2D1 IXGP16N60B2D1

IXGH16N60B2D1

Fig. 7. Transconductance

0

2

4

6

8

10

12

14

16

18

0 5 10 15 20 25 30 35

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fi g . 10. Rever se-B ias Safe Op er ati ng Area

0

5

10

15

20

25

30

35

100 150 200 250 300 350 400 450 500 550 600 650

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 22

Ω

dv / dt < 10V / ns

Fi g . 11. Maximum Tr an sien t Th er mal I mped an ce

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 5 10 15 20 25

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 300V

I

C

= 12A

I

G

= 10mA

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

http://store.iiic.cc/

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60B2D1 IXGP16N60B2D1

IXGH16N60B2D1

Fig. 12. Inductive Switching Energy Loss vs.

Gate Resistance

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

20 30 40 50 60 70 80 90 100

R

G

- Ohms

E

off

- MilliJoules

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 400V

I

C

= 12A

I

C

= 24A

Fig. 15. Inductive Turn-off Switching T imes vs.

Gate Resistance

100

110

120

130

140

150

160

170

180

190

20 30 40 50 60 70 80 90 100

R

G

- Ohms

t

f i

- Nanoseconds

60

90

120

150

180

210

240

270

300

330

t

d

(

off

)

- Nanoseconds

t

f i

t

d(off)

- - - -

T

J

= 125ºC,

VGE

= 15V

VCE

= 400V

I

C

= 24A

I

C

= 12A

Fig. 13. Inductive Switching Ener gy Loss vs.

Collector Current

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

12 13 14 15 16 17 18 19 20 21 22 23 24

I

C

- Amperes

E

off

- MilliJoules

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 22

Ω ,

V

GE

= 15V

V

CE

= 400V

T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Switching Ener gy Loss vs.

Junction Temperature

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

E

off

- MilliJoules

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 22

Ω ,

V

GE

= 15V

V

CE

= 400V

I

C

= 12A

I

C

= 24A

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current

40

60

80

100

120

140

160

180

200

12 13 14 15 16 17 18 19 20 21 22 23 24

I

C

- Amperes

t

f i

- Nanoseconds

40

60

80

100

120

140

160

180

200

t

d(off)

- Nanoseconds

t

f i

t

d(off)

- - - -

R

G

= 22

Ω

, V

GE

= 15V

V

CE

= 400V

T

J

= 125ºC

T

J

= 25ºC

Fig. 17. Inductive Turn-off Switching T imes vs.

Junction Temperature

40

60

80

100

120

140

160

180

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f i

- Nanoseconds

40

60

80

100

120

140

160

180

t

d

(

off

)

- Nanoseconds

t

f i

t

d(on)

- - - -

R

G

= 22

Ω

, V

GE

= 15V

V

CE

= 400V

I

C

= 24A, 12A

http://store.iiic.cc/

IXGA16N60B2D1 IXGP16N60B2D1

IXGH16N60B2D1

Fig. 19. Inductive Turn-on Switching Times vs.

Collector Current

15

20

25

30

35

40

45

50

55

12 13 14 15 16 17 18 19 20 21 22 23 24

IC - Amperes

t

r i

- Nanoseconds

15

16

17

18

19

20

21

22

23

t

d

(

on

)

- Nanoseconds

t r i

td(on)

- - - -

R

G

= 22Ω , V

GE

= 15V

V

CE

= 400V

T

J

= 25ºC, 125ºC

Fig. 20. Inductive T urn-on Switching Times vs.

Jun ct i o n Temp er at u r e

10

15

20

25

30

35

40

45

50

55

60

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

r i

- Nanoseconds

14

15

16

17

18

19

20

21

22

23

24

t

d

(

on

)

- Nanoseconds

t r i

td(on)

- - - -

R

G

= 22Ω , V

GE

= 15V

V

CE

= 400V

I

C

= 24A

I

C

= 12A

Fig. 18. Inductive T urn-on Switching Times vs.

Gate Resistance

0

10

20

30

40

50

60

70

80

90

20 30 40 50 60 70 80 90 100

RG - Ohms

t

r i

- Nanoseconds

10

15

20

25

30

35

40

45

50

55

t

d

(

on

)

- Nanoseconds

t r i

td(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 400V

I

C

= 12A

I

C

= 24A

IXYS REF: IXG_16N60B3D1(3D)8-02-10

http://store.iiic.cc/