Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1200 V TC = 80 C IC,nom. 200 A TC = 25 C IC 420 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 400 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 1,3 kW VGES +/- 20V V IF 200 A IFRM 400 A 2 I t - kA2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. max. - 2,1 2,6 - 2,4 VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 200A, V GE = 15V, Tvj = 25C VCE sat IC = 200A, V GE = 15V, Tvj = 125C V V Gate-Schwellenspannung gate threshold voltage IC = 8mA, V CE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V...+15V QG - - - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 13 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cres - - - nF VCE = 1200V, V GE = 0V, Tvj = 25C ICES 0,5 mA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, V GE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25C prepared by: Mark Munzer date of publication: 02.12.1998 approved by: Jens Thurau revision: 1a 1(8) IGES - 0,02 - 0,5 - - mA 400 nA DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE = 15V, RG = 4,7, Tvj = 25C td,on VGE = 15V, RG = 4,7, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, V CE = 600V Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 200A, V CE = 600V Fallzeit (induktive Last) fall time (inductive load) IC = 200A, V CE = 600V VGE = 15V, RG = 4,7, Tvj = 25C tr VGE = 15V, RG = 4,7, Tvj = 125C VGE = 15V, RG = 4,7, Tvj = 25C td,off VGE = 15V, RG = 4,7, Tvj = 125C VGE = 15V, RG = 4,7, Tvj = 25C tf Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 200A, V CE = 600V, V GE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 200A, V CE = 600V, V GE = 15V RG = 4,7, Tvj = 125C, LS = 60nH RG = 4,7, Tvj = 125C, LS = 60nH - 0,05 - s - 0,06 - s - 0,05 - s - 0,07 - s - 0,57 - s - 0,57 - s - 0,04 - s 0,05 - s Eon - 22 - mWs Eoff - 23 - mWs ISC - 1250 - A LsCE - 25 - nH RCC`+EE` - 0,60 - m min. typ. max. 2,3 tP 10sec, V GE 15V, R G = 4,7 TVj125C, V CC=900V, V CEmax=VCES -LsCE *dI/dt Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip max. - VGE = 15V, RG = 4,7, Tvj = 125C Kurzschluverhalten SC Data typ. IC = 200A, V CE = 600V TC=25C Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF = 200A, V GE = 0V, Tvj = 25C Ruckstromspitze peak reverse recovery current IF = 200A, - di F/dt = 4000A/sec VF IF = 200A, V GE = 0V, Tvj = 125C VR = 600V, VGE = -15V, T vj = 25C IRM VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladung recovered charge 1,8 1,7 V - 240 - A - 300 - A - 23 - As - 42 - As - 6 - mWs - 14 - mWs V IF = 200A, - di F/dt = 4000A/sec VR = 600V, VGE = -15V, T vj = 25C Qr VR = 600V, VGE = -15V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy - IF = 200A, - di F/dt = 4000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C 2(8) Erec DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,09 K/W - - 0,18 K/W RthCK - 0,01 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj - - 150 C Betriebstemperatur operation temperature Top -40 - 125 C Lagertemperatur storage temperature Tstg -40 - 150 C Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module = 1 W/m * K / grease = 1 W/m * K RthJC Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance 11 mm CTI comperative tracking index 275 Anzugsdrehmoment f. mech. Befestigung mounting torque terminals M6 Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight M1 3 6 Nm M2 2,5 5 Nm G 420 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC Ausgangskennlinie (typisch) Output characteristic (typical) vorlaufige Daten preliminary data IC = f (VCE) V GE = 15V 400 350 Tj = 25C 300 Tj = 125C IC [A] 250 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) T vj = 125C 400 350 VGE = 17V 300 VGE = 15V VGE = 13V IC [A] 250 VGE = 11V VGE = 9V VGE = 7V 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 400 350 Tj = 25C Tj = 125C 300 IC [A] 250 200 150 100 50 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 400 350 Tj = 25C Tj = 125C 300 IF [A] 250 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =4,7 , VCE = 600V, T j = 125C 100 90 Eoff Eon 80 Erec E [mJ] 70 60 50 40 30 20 10 0 0 50 100 150 200 250 300 350 400 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 200A , V CE = 600V , T j = 125C 100 90 Eoff Eon 80 Erec 70 E [mJ] 60 50 40 30 20 10 0 0 4 8 12 16 20 24 28 32 RG [] 6(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) preliminary data 1 ZthJC [K / W] 0,1 Zth:Diode Zth:IGBT 0,01 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 2 3 4 40,08 30,51 19,37 0,04 0,006 0,029 0,043 1,014 49,13 73,21 37,92 19,74 0,006 0,035 0,033 0,997 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, R g = 4,7 Ohm, T vj= 125C 450 400 350 IC [A] 300 IC,Modul 250 IC,Chip 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data 8(8) DB_BSM200GB120DLC.xls