Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM200GB120DLC
vorläufige Daten
preliminary data
Charakteristische Werte / Characteristic values
Transistor / Transistor min. typ. max.
Einschaltverzögerungszeit (ind. Last) IC = 200A, VCE = 600V
turn on delay time (inductive load) VGE = ±15V, RG = 4,7Ω, Tvj = 25°C td,on - 0,05 - µs
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C - 0,06 - µs
Anstiegszeit (induktive Last) IC = 200A, VCE = 600V
rise time (inductive load) VGE = ±15V, RG = 4,7Ω, Tvj = 25°C tr- 0,05 - µs
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C - 0,07 - µs
Abschaltverzögerungszeit (ind. Last) IC = 200A, VCE = 600V
turn off delay time (inductive load) VGE = ±15V, RG = 4,7Ω, Tvj = 25°C td,off - 0,57 - µs
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C - 0,57 - µs
Fallzeit (induktive Last) IC = 200A, VCE = 600V
fall time (inductive load) VGE = ±15V, RG = 4,7Ω, Tvj = 25°C tf- 0,04 - µs
VGE = ±15V, RG = 4,7Ω, Tvj = 125°C - 0,05 - µs
Einschaltverlustenergie pro Puls IC = 200A, VCE = 600V, VGE = 15V
turn-on energy loss per pulse RG = 4,7Ω, Tvj = 125°C, LS = 60nH Eon - 22 - mWs
Abschaltverlustenergie pro Puls IC = 200A, VCE = 600V, VGE = 15V
turn-off energy loss per pulse RG = 4,7Ω, Tvj = 125°C, LS = 60nH Eoff - 23 - mWs
Kurzschlußverhalten tP ≤ 10µsec, VGE ≤ 15V, RG = 4,7Ω
SC Data TVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dt ISC - 1250 - A
Modulinduktivität
stray inductance module LsCE - 25 - nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip TC=25°C RCC‘+EE‘ - 0,60 - mΩ
Charakteristische Werte / Characteristic values
Diode / Diode min. typ. max.
Durchlaßspannung IF = 200A, VGE = 0V, Tvj = 25°C VF- 1,8 2,3 V
forward voltage IF = 200A, VGE = 0V, Tvj = 125°C - 1,7 V
Rückstromspitze IF = 200A, - diF/dt = 4000A/µsec
peak reverse recovery current VR = 600V, VGE = -15V, Tvj = 25°C IRM - 240 - A
VR = 600V, VGE = -15V, Tvj = 125°C - 300 - A
Sperrverzögerungsladung IF = 200A, - diF/dt = 4000A/µsec
recovered charge VR = 600V, VGE = -15V, Tvj = 25°C Qr- 23 - µAs
VR = 600V, VGE = -15V, Tvj = 125°C - 42 - µAs
Abschaltenergie pro Puls IF = 200A, - diF/dt = 4000A/µsec
reverse recovery energy VR = 600V, VGE = -15V, Tvj = 25°C Erec - 6 - mWs
VR = 600V, VGE = -15V, Tvj = 125°C - 14 - mWs
2(8) DB_BSM200GB120DLC.xls