Rev.1.00, Aug.20.2004, page 1 of 13
BCR5AM-12L
Triac
Medium Power Use
REJ03G0293-0100
Rev.1.00
Aug.20.2004
Features
• IT(RMS) : 5 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6
• Non-Insulated Type
• Planar Passivation Type
Outline
2, 4
1
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
TO-220
123
4
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter Symbol 12 Unit
Repetitive peak off-state voltageNote1 VDRM 600 V
Non-repetitive peak off-state voltageNote1 VDSM 720 V
BCR5AM-12L
Rev.1.00, Aug.20.2004, page 2 of 13
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT(RMS) 5 A Commercial frequency, sine full wave
360° conduction, Tc = 103°CNote3
Surge on-state current ITSM 50 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 10.4 A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 3W
Average gate power dissipation PG(AV) 0.3 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 2.0 g Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 125°C, VDRM applied
On-state voltage VTM — — 1.8 V T c = 25°C, ITM = 7 A,
Instantaneous measurement
IVFGT I——1.5V
II VRGT I——1.5V
Gate trigger voltageNote2
III VRGT III ——1.5V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
IIFGT I——20
Note6 mA
II IRGT I——20
Note6 mA
Gate trigger currentNote2
III IRGT III ——20
Note6 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
Thermal resistance Rth(j-c) — — 3.0 °C/W Junction to caseNote3 Note4
Critical-rate of rise of off-state
commutating voltageNote5 (dv/dt)c 5 — — V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circu it.
3. Case temperature is measured at the T 2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivit y (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and curr ent waveforms
(inductive load)
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR5AM-12L
Rev.1.00, Aug.20.2004, page 3 of 13
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
10
0
25710
1
40
20
310
2
425734
60
80
100
30
10
50
70
90
0
4.60.6 1.4 2.2 3.0 3.81.0 1.8 2.6 3.4 4.2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
–60 –20
–40
10
0
2310
1
5710
2
23 5710
3
23 5710
4
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10–1
2310–1 5710
0
23 5
2310
2
5710
3
23 5
710
1
23 5710
2
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
1
10
3
7
5
3
2
20
10
2
7
5
3
2
60 100 140
4
4
04080120
10
1
10
3
7
5
3
2
20
10
2
7
5
3
2
60 100 140
4
4
04080
120
–60 –20
–40
Tj = 125°C
Tj = 25°C
V
GM
= 10V
P
GM
= 3W
I
GM
= 2A
V
GD
= 0.2V
I
GT
= 20mA
V
GT
= 1.5V
P
G(AV)
= 0.3W
Typical Example
I
RGT III
I
RGT I
I
FGT I
Typical Example
BCR5AM-12L
Rev.1.00, Aug.20.2004, page 4 of 13
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (mA)
8
6
5
3
1
08
01357
2
4
7
246
160
120
100
60
20
08
013457
40
80
140
26
140400 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
10
2
7
5
3
2
20
10
1
7
5
3
2
60 100 140
4
4
04080120
10
0
160
120
100
60
20
08
01 3 5 7
40
80
140
246
–
60
–
20
–
40
–
60
–
20
–
40
160
120
100
60
20
000.5 1.5 2.5
40
80
140
1.0 2.0 3.0
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
Typical Example V
D = 12V
Distribution
Typical Example
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
BCR5AM-12L
Rev.1.00, Aug.20.2004, page 5 of 13
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Characteristics Test Circuits
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
4
4
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160 7
5
3
2
10
0
25710
1
10
1
7
7
5
3
2
310
2
4
4
425734
10
0
6Ω6Ω
6Ω
6V 6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
14020 60 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
04080120
160
100
80
40
20
0140
40
020 6080
140
100120
60
120
–
60
–
20
–
40
–
60
–
20
–
40
T2+, G+
T2–, G–Typical Example
Distribution
T2+, G–
Typical Example
Typical Example
I Quadrant
III Quadrant
Typical Example
Tj = 125°C
Minimum
Characteristics
Value
III Quadrant
I Quadrant
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
IFGT I
IRGT I
IRGT III
BCR5AM-12L
Rev.1.00, Aug.20.2004, page 6 of 13
Package Dimensions
TO-220
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
Conforms 2.0 Cu alloyConforms
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
10.5
16 max
3.8 max
12.5 min
4.5
7.0
1.0
0.8
2.5 2.5
4.5
1.3
0.5 2.6
φ 3.6 ± 0.2
3.2 ± 0.2
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name +A BCR5AM-12LA
Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code BCR5AM-12LA-A8
Note : Please confirm the specification about the shipping in d etail.
BCR5AM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 7 of 13
BCR5AM-12L
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
Features
• IT(RMS) : 5 A
• VDRM : 600 V
• IFGT I, IRGT I, IRGT III : 20 mA (10 mA)Note6
• Non-Insulated Type
• Planar Passivation Type
Outline
2, 4
1
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
TO-220
123
4
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying
machine, electric tool, electric heater control, and other general purpose control applications
Warning
1. Refer to the recommended circuit values around the tria c before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Voltage class
Parameter Symbol 12 Unit
Repetitive peak off-state voltageNote1 VDRM 600 V
Non-repetitive peak off-state voltageNote1 VDSM 720 V
BCR5AM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 8 of 13
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT(RMS) 5A
Commercial frequency, sine full wave
360° conduction, Tc = 128°CNote3
Surge on-state current ITSM 50 A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusing I2t 10.4 A2sValue corresponding to 1 c ycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 3W
Average gate power dissipation PG(AV) 0.3 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2A
Junction temperature Tj – 40 to +150 °C
Storage temperature Tstg – 40 to +150 °C
Mass — 2.0 g Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150°C, VDRM applied
On-state voltage VTM ——1.8V
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
IVFGT I——1.5V
II VRGT I——1.5V
Gate trigger voltageNote2
III VRGT III ——1.5V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
IIFGT I——20
Note6 mA
II IRGT I——20
Note6 mA
Gate trigger currentNote2
III IRGT III ——20
Note6 mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125°C/150°C,
VD = 1/2 VDRM
Thermal resistance Rth(j-c) — — 3.0 °C/W Junction to caseNote3 Note4
Critical-rate of rise of off-state
commutating voltageNote5 (dv/dt)c 5/1 — — V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T 2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivit y (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions Commutating voltage and curr ent waveforms
(inductive load)
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
BCR5AM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 9 of 13
Performance Curves
Maximum On-State Characteristics
On-State Voltage (V)
On-State Current (A)
Rated Surge On-State Current
Conduction Time (Cycles at 60Hz)
Surge On-State Current (A)
Gate Characteristics (I, II and III)
Gate Current (mA)
Gate Voltage (V)
Gate Trigger Voltage vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C)
×
100 (%)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
× 100 (%)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Conduction Time (Cycles at 60Hz)
Transient Thermal Impedance (°C/W)
0.5 1.5 2.5 3.51.0 2.0 3.0 4.0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
0
25710
1
40
20
310
2
425734
60
80
100
30
10
50
70
90
0
10
1
10
3
7
5
3
2
10
2
7
5
4
4
3
2
20 60 100 1601400 40 80 120
10
0
2310
0
5710
1
23 5710
2
23 5710
3
7
5
3
2
10
1
7
5
3
5
2
7
5
10
–1
3
2
10
0
10
2
5
10
1
5
7
2
3
7
2
3
10
3
5
7
2
3
20 60 100 16014004080120
2310
–1
5710
0
23 5
2310
2
5710
3
23 5
710
1
23 5710
2
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
–60 –20
–40
–60 –20
–40
Tj = 25°C
Tj = 150°C
V
GM
= 10V
P
GM
= 3W
I
GM
= 2A
V
GD
= 0.1V
I
GT
= 20mA
V
GT
= 1.5V
P
G(AV)
= 0.3W
Typical Example
I
RGT III
I
RGT I
I
FGT I
Typical Example
BCR5AM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 10 of 13
On-State Power Dissipation (W)
RMS On-State Current (A)
Maximum On-State Power Dissipation
RMS On-State Current (A)
Case Temperature (°C)
Allowable Case Temperature vs.
RMS On-State Current
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
Junction Temperature (°C)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C) × 100 (%)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
Junction Temperature (°C)
Holding Current (mA)
8
6
5
3
1
08
01357
2
4
7
246
160
120
100
60
20
0
80 13
40
80
140
25467
160
120
100
60
20
08
01357
40
80
140
246
160
120
100
60
20
000.5 1.5 2.5
40
80
140
1.0 2.0 3.0
10
2
7
5
3
2
10
1
7
5
3
2
4
4
10
0
20 60 100 140 16004080120
10
3
7
5
3
2
10
2
10
4
7
5
3
2
10
5
7
5
3
2
10
6
7
5
3
2
20 60 100 16014004080120
–
60
–
20
–
40
–
60
–
20
–
40
RMS On-State Current (A)
Ambient Temperature (°C)
Allowable Ambient Temperature vs.
RMS On-State Current
360° Conduction
Resistive,
inductive loads
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
Typical Example
Typical Example
Distribution
V
D = 12V
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
BCR5AM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 11 of 13
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs) × 100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C) × 100 (%)
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Commutation Characteristics (Tj=150°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
Latching Current (mA)
Latching Current vs.
Junction Temperature
Junction Temperature (°C)
10
3
7
5
3
2
7
5
3
2
7
5
3
2
10
2
10
1
10
0
20 60 100 16014004080120
160
100
80
40
20
0
140
60
120
20 60 100 1601400 40 80 120
–
60
–
20
–
40
–
60
–
20
–
40
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
7
5
3
2
10
0
23 5710
1
10
2
10
1
7
7
5
3
2
23 57
10
0
7
5
3
2
10
0
23 5710
1
10
2
10
1
7
7
5
3
2
23 57
10
0
T2+, G+
T2–, G–Typical Example
T2+, G–
Typical Example
Distribution
Typical Example
I Quadrant
III Quadrant
Typical Example
Tj = 125°C
I Quadrant
III Quadrant
Typical Example
Tj = 150°C
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
III Quadrant
Minimum
Characteristics
Value
Main Voltage
Main CurrentI
T
(di/dt)c
τ
V
D
Time
Time
(dv/dt)c
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
III Quadrant
I Quadrant
Minimum
Characteristics
Value
BCR5AM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 12 of 13
C1 = 0.1 to 0.47µF
R1 = 47 to 100Ω
C0 = 0.1µF
R0 = 100Ω
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac
Test Procedure I
Test Procedure III
Test Procedure II
Gate Trigger Current (tw)
Gate Trigger Current (DC) × 100 (%)
Gate Current Pulse Width (µs)
Gate Trigger Current vs.
Gate Current Pulse Width
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
C
1
C
0
R
0
R
1
6Ω6Ω
6Ω
6V 6V
6V
330Ω330Ω
330Ω
A
V
A
V
A
V
Typical Example
I
RGT III
I
RGT I
I
FGT I
Load
BCR5AM-12L (The product guaranteed maximum junction temperature of 150°C)
Rev.1.00, Aug.20.2004, page 13 of 13
Package Dimensions
TO-220
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
Conforms 2.0 Cu alloyConforms
Symbol Dimension in Millimeters
Min Typ Max
A
A
1
A
2
b
D
E
e
x
y
1
y
ZD
ZE
10.5
16 max
3.8 max
12.5 min
4.5
7.0
1.0
0.8
2.5 2.5
4.5
1.3
0.5 2.6
φ 3.6 ± 0.2
3.2 ± 0.2
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Straight type Vinyl sack 100 Type name +B BCR5AM-12LB
Lead form Plastic Magazine (Tube) 50 Type name +B – Lead forming code BCR5AM-12LB-A8
Note : Please confirm the specification about the shipping in d etail.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
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diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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