DATA SH EET
Product specification
Supersedes data of 2001 May 11 2004 Feb 11
DISCRETE SEMICONDUCTORS
BAP65-03
Silicon PIN diode
2004 Feb 11 2
NXP Semiconductors Product specification
Silicon PIN diode BAP65-03
FEATURES
High voltage, current controlled
RF resistor for RF switches
Low diode capacitance
Low diode forward resistance (low loss)
Very low series inductance.
APPLICATIONS
RF attenuators and switches
Bandswitch for TV tuners
Series diode fo r mobile communication transmit/ receive
switch.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
21
sym006
Marking code: D3.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) and symbol.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
BAP65-03 plastic surface moun ted package; 2 lea ds SOD323
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage 30 V
IFcontinuous forward current 100 mA
Ptot total power dissipation Ts90 C500 mW
Tstg storage temper a t u re 65 +150 C
Tjjunction temperature 65 +150 C
2004 Feb 11 3
NXP Semiconductors Product specification
Silicon PIN diode BAP65-03
ELECTRICAL CHARACTERISTIC S
Tj=25C unless otherwise specified.
Note
1. Guaranteed on AQL bas is: inspection level S4, AQL 1.0.
THERMAL CHARACTE RISTI CS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage IF=50mA 0.9 1.1 V
IRreverse leakage current VR=20V 20 nA
Cddiode capacitance VR=0V; f=1MHz 0.65 pF
VR= 1 V; f = 1 MHz 0.55 0.9 pF
VR=3V; f=1MHz 0.5 0.8 pF
VR=20V; f=1MHz 0.375 pF
rDdiode forw ar d resistance IF=1mA; f=100MHz 1 
IF= 5 mA; f = 100 MHz; note 1 0.65 0.95
IF= 10 mA; f = 100 MHz; note 1 0.56 0.9
IF= 100 mA; f = 100 MHz 0.35 
s212isolation VR= 0; f = 900 MHz 10.2 dB
VR= 0 ; f = 1800 MHz 5.8 dB
VR= 0 ; f = 2450 MHz 4.1 dB
s212insertion loss IF= 1 mA; f = 900 MHz 0.1 dB
IF= 1 mA; f = 1800 MHz 0.14 dB
IF= 1 mA; f = 2450 MHz 0.18 dB
s212insertion loss IF= 5 mA; f = 900 MHz 0.06 dB
IF= 5 mA; f = 1800 MHz 0.1 dB
IF= 5 mA; f = 2450 MHz 0.14 dB
s212insertion loss IF= 10 m A; f = 900 MHz 0.06 dB
IF= 10 mA; f = 1800 MHz 0.1 dB
IF= 10 mA; f = 2450 MHz 0 .13 dB
s212insertion loss IF= 100 mA; f = 900 MHz 0.05 dB
IF= 100 mA; f = 1800 MHz 0.1 dB
IF= 100 mA; f = 2450 MHz 0.14 dB
Lcharge carrier life time when switched from IF=10mA to
IR=6mA; R
L=100;
measured at IR=3mA
0.17 s
LSseries inductance IF= 100 mA; f = 100 MHz 1.5 nH
SYMBOL PARAMETER VALUE UNIT
Rth(j-s) thermal resistance from junction to soldering point 120 K/W
2004 Feb 11 4
NXP Semiconductors Product specification
Silicon PIN diode BAP65-03
GRAPHICAL DATA
handbook, halfpage
10
1
101
MLD503
1011IF (mA)
rD
(Ω)
10 102
Fig.2 Forward resistance as a function of forward
current; ty pical values.
Tj=25C; f = 100 MHz.
handbook, halfpage
020
1000
0
200
400
600
800
4
Cd
(fF)
VR (V)
81216
MLD504
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
Tj=25C; f = 1 MHz.
handbook, halfpage
0 1000
(1) (2) (3) (4)
(5)
2000 f (MHz) 3000
0
0.5
0.1
0.2
0.3
0.4
MLD505
s21 2
(dB)
Fig.4 Insertion loss (s212) of the diode as a
function of frequency; typical values.
Diode inserted in series with a 50 stripline circuit and biased
via the analyzer Tee network; Tamb =25C.
(1) IF=0.5mA.
(2) IF=1mA.
(3) IF=5mA.
(4) IF=10mA.
(5) IF=100mA.
handbook, halfpage
0 1000 2000 f (MHz) 3000
0
10
30
40
20
MLD506
s21
2
(
dB
)
Fig.5 Isolation (s212) of the diode as a function of
frequency; typical values.
Diode zero biased and inserted in serie s with a 50 stripline circuit.
Tamb =25C.
2004 Feb 11 5
NXP Semiconductors Product specification
Silicon PIN diode BAP65-03
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOD323 SC-76
SOD323
03-12-17
06-03-16
Note
1. The marking bar indicates the cathode
UNIT A
mm 0.05
1.1
0.8 0.40
0.25 0.25
0.10 1.8
1.6 1.35
1.15 2.7
2.3 0.45
0.15
A1
max
DIMENSIONS (mm are the original dimensions)
Plastic surface-mounted package; 2 leads
01
(1)
21
2 mm
scale
bpc D E HDQ
0.25
0.15
Lpv
0.2
A
D
A
E
Lp
bp
detail X
A1c
Q
HDvA
M
X
2004 Feb 11 6
NXP Semiconductors Product specification
Silicon PIN diode BAP65-03
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a d es ign.
2. The product status of device(s) described in this document may ha ve changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Dev elopment This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product s pecification.
DEFINITIONS
Product specification The information and da ta
provided in a Product data she et shall define the
specification of the product as agre ed between NXP
Semiconductors and its custo m er, unless NXP
Semiconductors and cus to mer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which th e NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sh eet.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconduc tors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
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Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditio ns of comme rcial
sale of NXP Semiconductors.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and prod uct descriptions, at any time and
without notice. This document supersedes and replaces all
information su pplied prior to the publicat ion hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critic al sys tems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to res ult in personal inj ur y, de ath or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductor s pr od ucts in such equipment or
application s and therefor e such inclusion and/or use is at
the customer’s own risk.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors pro du ct is su itable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of custom er’s third
party customer(s). Customers should provide appropriate
design and opera ting safeguards to minimi ze the risks
associated with their ap plications and products.
2004 Feb 11 7
NXP Semiconductors Product specification
Silicon PIN diode BAP65-03
NXP Semiconductors does not accept any liability related
to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s th ird
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semic on ductors produc ts in order to
avoid a default of the app lications and th e products or of
the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this
respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operat ion of the device at these or any othe r
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the qual ity and
reliability of the device.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditio ns of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agre eme nt. In case an
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Semiconductors hereby expressly objects to apply i ng the
customer’s general terms and conditions with regard to the
purchase of NXP Semicon ductors products by customer.
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Quick refer ence data The Quick reference data is an
extract of th e product data given in the Li miting values and
Characteristics sections of this document, and as such is
not complete, exhaus tive or legally binding.
Non-automotive qualified products Unless this data
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or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified prod ucts in automotive equipment or
applications.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for suc h aut omo tive application s, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyo nd NXP
Semiconductors’ specifications such use shall be solely at
customer’s own ris k, an d (c) customer fully inde mnifies
NXP Semiconductors for an y liability, damages or failed
product clai ms r esult ing fr om cus to mer d esi gn an d us e of
the product for automotive ap plic ations beyond NXP
Semiconductors st andard warranty and NXP
Semiconductors’ product specifications.
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
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© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No cha ng es were made to the technic al content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R77/04/pp8 Date of releas e: 2004 Feb 11