©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE3055T
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse test: P W ≤300µs, duty cycle≤2% Pulse
Symbol Parameter Value Units
VCBO Collector -Base Voltage 70 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 10 A
IB Base Current 6 A
PC Collector Dissipation (TC=25°C) 75 W
PC Collector Dissipation (Ta=25°C) 0.6 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symb o l Parame te r Tes t C o ndition Min . Max . Units
BVCEO Collector-Emitter Breakdown Volt age IC = 200mA, IB = 0 60 V
ICEO Collector Cut-off Current VCE = 3 0 V, IB = 0 700 µA
ICEX1
ICEX2
Collector Cut-off Current VCE = 70V, V BE(off) = -1.5V
VCE = 70V, V BE(off) = -1.5V
@ TC = 150°C
1
5 mA
mA
IEBO Em itter Cut-off Current VEB = 5V, IC = 0 5 mA
hFE *DC Current Gain
VCE = 4V, I C = 4A
VCE = 4V, I C = 10A 20
5 100
VCE(sat) *Collector-Emitter Saturat ion Voltage IC = 4A, IB = 0.4A
IC = 10A, IB = 3.3A 1.1
8 V
V
VBE (on) *Base-Emitter On Voltage VCE = 4V, IC = 4A 1.8 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 500mA 2 MHz
MJE3055T
General Purpos e and Switching Applications
• DC Current Gain Specified to IC =10A
• High Current Gain-Bandwidth Product : fT = 2MHz (Min.)
1.Base 2.Collector 3.Emitter
1TO-220
©2001 Fairchild Semiconductor Corporation
MJE3055T
Rev. A1, February 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
0.01 0.1 1 10
1
10
100
1000
VCE = 2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
IC = 10IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SA TURATION VOLTAGE
IC[A], COLLECTOR CURRENT
110100
0.1
1
10
100
1000
µ
s
5ms
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 255075100125150175
0
15
30
45
60
75
90
105
PC[W], POWER DISSIPATION
Tc[oC], CASE TEMPERAT URE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE3055T
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. G
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when properly used in accordance with instructions for use
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device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary F irst Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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