BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 -- 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB test circuit. Mode of operation f (GHz) class-AB; tp = 300 s; = 10 % 2.9 to 3.3 VDS PL(1dB) Gp D IDq (V) (W) (dB) (%) (mA) 32 220 11 45 100 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Matched to 50 for ease of use Extreme low weight pallet (environmental friendly and easy to use) 1.3 Applications General S-Band radar applications BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 2. Pinning information 2.1 Pinning GATE 1 6 DRAIN RF_IN 2 5 RF_OUT GATE(OPT) 3 4 DRAIN(OPT) 001aal762 Top view. Fig 1. Preliminary pin configuration 2.2 Pin description Table 2. Pin description[1] Symbol Pin Description GATE 1 gate RF_IN 2 RF input GATE(OPT) 3 optional gate DRAIN(OPT) 4 optional drain RF_OUT 5 RF output DRAIN 6 drain [1] The case is a source/ground connection. 3. Ordering information Table 3. Ordering information Type number Package BLS6G2933P-200 BLS6G2933P-200 Objective data sheet Name Description Version - All information provided in this document is subject to legal disclaimers. Rev. 01 -- 28 May 2010 (c) NXP B.V. 2010. All rights reserved. 2 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Min Max Unit - 60 V VGS gate-source voltage - 11 V ID drain current - 66 A Tstg storage temperature -40 +125 C Tj junction temperature - 200 C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Zth(j-h) transient thermal impedance from junction to heatsink Th = 25 C; PL = 200 W [1] Typ Unit tp = 300 s; = 10 % [1] K/W tp = 200 s; = 10 % [1] K/W tp = 100 s; = 10 % [1] K/W Measured from junction to heatsink of the pallet. 6. Characteristics Table 6. Characteristics per section Tj = 25 C; unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage BLS6G2933P-200 Objective data sheet Conditions Min Typ Max Unit VGS = 0 V; ID = 1 mA 60 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 360 mA 1.4 1.8 2.3 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 10 A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 900 nA gfs forward transconductance VDS = 10 V; ID = 10 A - 13 - S All information provided in this document is subject to legal disclaimers. Rev. 01 -- 28 May 2010 (c) NXP B.V. 2010. All rights reserved. 3 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 7. Application information Table 7. Application information RF performance in common source class-AB circuit; Th = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; PL = 215 W; Zth = K/W; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit f frequency 2.9 - 3.3 GHz VCC supply voltage - - 32 V tp pulse duration - - 300 s duty cycle - 10 - % PL(1dB) output power at 1 dB gain compression - 220 - W Gp power gain 10 11 - dB D drain efficiency 40 45 - % - 0.1 0.3 dB Pdroop(pulse) pulse droop power Zi input impedance - 50 - Zo output impedance - 50 - IRL input return loss - -10 - dB 7.1 Ruggedness in class-AB operation The BLS6G2933P-200 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 215 W pulsed; tp = 300 s; = 10 %. BLS6G2933P-200 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 -- 28 May 2010 (c) NXP B.V. 2010. All rights reserved. 4 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 8. Test information VGG VDD C12 C1 C2 C3 C4 C5 C6 C11 R1 C10 C9 C13 C14 R2 C15 C7 C8 C16 001aak230 The striplines are on a Rogers RO6006 Printed-Circuit Board (PCB) with thickness = 0.635 mm. See Table 8 for list of components. The drawing is not to scale. Fig 2. Component layout Table 8. List of components See Figure 2 for component layout. BLS6G2933P-200 Objective data sheet Component Description C1, C8 multilayer ceramic chip capacitor 47 F Value TDK C2, C7, C11, C15 multilayer ceramic chip capacitor 100 pF ATC100B C3, C4, C5, C6, C9, C10, C13, C14 multilayer ceramic chip capacitor 33 pF ATC100A C12 electrolytic capacitor 680 F C16 electrolytic capacitor 68 F R1, R2 SMD resistor 33 All information provided in this document is subject to legal disclaimers. Rev. 01 -- 28 May 2010 Remarks thin film (c) NXP B.V. 2010. All rights reserved. 5 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 9. Package information +0.13 2.2 (2x) 11.35 9.5+0.03 2.5 (6x) 0 7.5-0.2 2 (2x) A-A 0.50 10.3 A-A 1.25 1 1.25 4.7 1.45 R1.5 3.2 1 0 35.8 -0.1 31.6 11.4 0.05 25.4 B-B 33.4 35.4 B-B A-A 1.5 10.5 1.45 (2x) 1.25 11.15 0.2 45.7 0.05 2 0.985 (2x) 0 50.8 -0.1 B-B 2.7 (4x) 001aak203 Printed-Circuit Board (PCB) thickness is 0.64 mm. Sweat bonding is approximately 25 m. Fig 3. Preliminary package outline BLS6G2933P-200 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 -- 28 May 2010 (c) NXP B.V. 2010. All rights reserved. 6 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 10. Package outline Package description line SOxxxx 001aad028 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE jj-mm-dd SOxxxx Fig 4. EUROPEAN PROJECTION Package outline BLS6G2933P-200 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 -- 28 May 2010 (c) NXP B.V. 2010. All rights reserved. 7 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 11. Abbreviations Table 9. Abbreviations Acronym Description LDMOS Laterally Diffused Metal Oxide Semiconductor RF Radio Frequency S-Band Short wave Band SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BLS6G2933P-200 v.1 20100528 Objective data sheet - - BLS6G2933P-200 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 -- 28 May 2010 (c) NXP B.V. 2010. All rights reserved. 8 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. BLS6G2933P-200 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 -- 28 May 2010 (c) NXP B.V. 2010. All rights reserved. 9 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLS6G2933P-200 Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 -- 28 May 2010 (c) NXP B.V. 2010. All rights reserved. 10 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 15. Contents 1 1.1 1.2 1.3 2 2.1 2.2 3 4 5 6 7 7.1 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package information . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 May 2010 Document identifier: BLS6G2933P-200