BLS6G2933P-200 - NXP - Datasheet.Directory

1. Product profile

1.1 General description

200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz

range.

1.2 Features and benefits

Easy power control

Integrated ESD protection

Excellent ruggedness

Excellent thermal stability

Designed for broadband operation (2.9 GHz to 3.3 GHz)

Matched to 50 Ω for ease of use

Extreme low weight pallet (e nvironmental friendly and easy to use)

1.3 Applications

General S-Band radar applications

BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

Rev. 01 — 28 May 2010 Objective data sheet

Table 1. Typical performance

RF performance at Tcase = 25

C in a common source class-AB test circuit.

Mode of operation f VDS PL(1dB) GpηDIDq

(GHz) (V) (W) (dB) (%) (mA)

class-AB; tp = 300 μs; δ = 10 % 2.9 to 3.3 32 220 11 45 100

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Objective data sheet Rev. 01 — 28 May 2010 2 of 11

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

2. Pinning information

2.1 Pinning

2.2 Pin description

[1] The case is a source/ground connection.

3. Ordering information

Top view.

Fig 1. Preliminary pin configuration

001aal762

16GATE DRAIN

25RF_IN RF_OUT

34GATE(OPT) DRAIN(OPT)

Table 2. Pin description[1]

Symbol Pin Description

GATE 1 gate

RF_IN 2 RF input

GATE(OPT) 3 optional gate

DRAIN(OPT) 4 optional drain

RF_OUT 5 RF output

DRAIN 6 drain

Table 3. Ordering informati on

Type number Package

Name Description Version

BLS6G2933P-200 - <tbd> <tbd>

Objective data sheet Rev. 01 — 28 May 2010 3 of 11

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

4. Limiting values

5. Thermal characteristics

[1] Measured from junction to heatsink of the pallet.

6. Characteristics

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage - 60 V

VGS gate-source voltage - ±11 V

IDdrain current - 66 A

Tstg storage temperature −40 +125 °C

Tjjunction temperature - 200 °C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Zth(j-h) transient thermal impedance from

junction to heatsink Th=25°C; PL=200W

tp=300μs; δ=10% [1] <tbd> K/W

tp=200μs; δ=10% [1] <tbd> K/W

tp=100μs; δ=10% [1] <tbd> K/W

Table 6. Characteristics per section

Tj = 25

C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown

voltage VGS =0V; I

D=1mA 60 - - V

VGS(th) gate-source threshold voltage VDS =10 V; I

D= 360 mA 1.4 1.8 2.3 V

IDSS drain leakage current VGS =0V; V

DS =28V - - 10 μA

IGSS gate leakage current VGS =±11 V; VDS = 0 V - - 900 nA

gfs forward transconductance VDS =10V; I

D=10A - 13 - S

Objective data sheet Rev. 01 — 28 May 2010 4 of 11

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

7. Application information

7.1 Ruggedness in class-AB operation

The BLS6G2933P-200 is capable of withstanding a load mismatch corr esponding to

VSWR = 5 : 1 through all phases under the following conditions: VDS =32V;

IDq =100mA; P

L= 215 W pulsed; tp = 300 μs; δ = 10 %.

Table 7. Application information

RF performance in common source class-AB circuit; Th=25

C; tp=300

=10 %;

IDq = 100 mA; PL= 215 W ; Zth = <tbd> K/W; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

f frequency 2.9 - 3.3 GHz

VCC supply voltage - - 32 V

tppulse duration - - 300 μs

δduty cycle - 10 - %

PL(1dB) output power at 1 dB gain compression - 220 - W

Gppower ga i n 10 11 - dB

ηDdrain efficiency 40 45 - %

Pdroop(pulse) pulse droop power - 0.1 0.3 dB

Ziinput impedance - 50 - Ω

Zooutput impedance - 50 - Ω

IRL input return loss - −10 - dB

Objective data sheet Rev. 01 — 28 May 2010 5 of 11

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

8. Test information

The striplines are on a Rogers RO6006 Printed-Circuit Board (PCB) with thickness = 0.635 mm.

See Table 8 for list of components. The drawing is not to scale.

Fig 2. Component layout

Table 8. List of compo ne nts

See Figure 2 for component layout.

Component Description Value Remarks

C1, C8 multilayer ceramic chip capacitor 47 μFTDK

C2, C7, C11, C15 multilayer ceramic chip capacitor 100 pF ATC100B

C3, C4, C5, C6, C9, C10, C13, C14 multilayer ceramic chip capacitor 33 pF ATC100A

C12 electrolytic capacitor 680 μF

C16 electrolytic capacitor 68 μF

R1, R2 SMD resistor 33 Ωthin film

001aak230

VGG VDD

C15

C14

C10

C11

C13

C16

C12

Objective data sheet Rev. 01 — 28 May 2010 6 of 11

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

9. Package information

Printed-Circuit Board (PCB) thickness is 0.64 mm.

Sweat bonding is approximately 25 μm.

Fig 3. Preliminary package outline

001aak20

∅2.7 (4x)

B-B

31.6

1.45 (2x)

1.25

A-A

35.8

∅1.5

A-A

0.2

1.25

1.451.25

3.2

B-BB-B

10.5

25.4 33.4 35.4

11.15

45.7 ±0.05

0.985 (2x)

50.8 −0.1

−0.1

011.4 ±0.05

7.5

11.35 −0.2

9.5 2.5 (6x)2.2 (2x)

2 (2x)

+0.03

+0.13

10.3

R1.5

4.7

0.50

Objective data sheet Rev. 01 — 28 May 2010 7 of 11

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

10. Package outline

Fig 4. Package outline

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOxxxx

001aad028

SOxxx

jj-mm-dd

UNIT

DIMENSIONS (mm are the original dimensions)

ackage description line

0 5 10 mm

scale

<tbd>

Objective data sheet Rev. 01 — 28 May 2010 8 of 11

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

11. Abbreviations

12. Revision history

Table 9. Abbreviations

Acronym Description

LDMOS Laterally Diffused Metal Oxide Semiconductor

RF Radio Frequency

S-Band Short wave Band

SMD Surface Mounted Device

VSWR Voltage Standing-Wave Ratio

Table 10. Revision history

Document ID Release date Data sheet statu s Change notice Supersedes

BLS6G2933P-200 v.1 20100528 Objective data sheet - -

Objective data sheet Rev. 01 — 28 May 2010 9 of 11

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full dat a

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre va il.

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data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

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Product data sheet.

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Limited warr a nty and liability — Information in this document is believed to

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limitation specifications and product descriptions, at any time and without

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authorized or warranted to be suit able for use in life support, life-crit ical or

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malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe propert y or environment a l

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

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NXP Semiconductors does not accept any liabili ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

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applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data fro m the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Objective data sheet Rev. 01 — 28 May 2010 10 of 11

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such au tomotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y

liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLS6G2933P-200

LDMOS S-Band radar pallet amplifier

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 28 May 2010

Document identifi er: BLS6G2933P-200

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

2.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

2.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 4

7.1 Ruggedness in class-AB operation . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package information . . . . . . . . . . . . . . . . . . . . . 6

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Contact information. . . . . . . . . . . . . . . . . . . . . 10

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11