REJ03C0101-0400Z Rev.4.00 2007.09.12
page 1of 15
REJ03C0101-0400Z
Rev.4.00
2007.09.12
R1LV1616R Series
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
Description
The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm], a 48pin thin small outline mount device[TSOP / 12mm x 20mm with the pin-
pitch of 0.5mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8
array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
•Single 2.7-3.6V power supply
•Small stand-by current:2µA (3.0V, typ.)
•Data retention supply voltage =2.0V
•No clocks, No refresh
•All inputs and outputs are TTL compatible
•Easy memory expansion by CS1#, CS2, LB# and UB#
•Common Data I/O
•Three-state outputs: OR-tie capability
•OE# prevents data contention on the I/O bus
•Process technology: 0.15um CMOS
Features
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Ordering Information
% -Temperature version; see table below
-40 ~ +85 ºCI
0 ~ +70 ºCR
Temperature Range%
55 ns (Note0)R1LV1616RSA-5S%
55 ns (Note0)R1LV1616RBG-5S%
55 ns (Note0)R1LV1616RSD-5S% 350-mil 52-pin plastic µ-TSOP(II)
(normal-bend type) (52PTG)
70 nsR1LV1616RSD-7S%
85 nsR1LV1616RSD-8S%
7.5mmx8.5mm f-BGA 0.75mm pitch 48ball
70 nsR1LV1616RBG-7S%
85 nsR1LV1616RBG-8S%
85 nsR1LV1616RSA-8S%
12mm x 20mm plastic TSOP(I)
(normal-bend type) (48P3R)
70 nsR1LV1616RSA-7S%
PackageAccess timeType No.
Note0. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on
customer’s system. Please contact our sales office in your region, in case of the inquiry for 55ns parts.
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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52-pin µTSOP 48-pin fBGA
123456
A
B
C
D
E
F
G
DQ2
A7
DQ0
CS2
Vcc
Vss
DQ5
A2
CS1#
DQ1
DQ3
DQ4
DQ6
A1
A4
A6A5
A17
A16
A15
A0
A3
A14
OE#
UB#
DQ14
DQ12
DQ11
DQ9
LB#
DQ15
DQ13
Vss
Vcc
DQ10
DQ7
WE#A13A12A19
DQ8
N.C.A11A10A9A8
HA18
NC
or
Vss
BYTE#
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
52
51
50
49
A16
DQ0
A0
Vss
OE#
DQ8
DQ1
DQ9
DQ2
NC
Vss
DQ10
DQ3
DQ11
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A-1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A18
A17
A11
A10
A15
17
18
19
20
21
22
23
24
A13
A12
A14
A9
A8
A7
A6
A5
A4
A1
A2
A3
WE#
A19
Vcc
CS1#
28
27
25
26
LB#
CS2
NC
NC
NC
NC
UB#
NC
Pin Arrangement
48-pin TSOP
BYTE#
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
48
47
DQ0
A0
Vss
OE#
DQ8
DQ1
DQ9
DQ2
Vcc
DQ10
DQ3
DQ11
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A-1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A7
A6
A11
A10
A15
17
18
19
20
21
22
23
24
A13
A12
A14
A9
A8
A5
A4
A3
A2
A1
WE#
A19
UB#
NC
26
25
Vss
LB#
CS2
A18
A17
CS1#
A16
NC
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Note. BYTE# pin supported by only TSOP and uTSOP types.
Block Diagram
Memory Array
1048576 Words
x 16BITS
OR
2097152 Words
x 8BITS
DECODER
ADDRESS BUFFER
CLOCK
GENERATOR
x8/x16
SWITCHING
CIRCUIT
CS2
CS1#
LB#
UB#
A0
A19
WE#
OE#
BYTE#
SENSE Amp. SENSE Amp.
OUTPUT
BUFFER
DATA INPUT
BUFFER OUTPUT
BUFFER
DATA INPUT
BUFFER
DQ0
DQ7
DQ8
DQ15
/ A-1
Vcc
Vss
DATA SELECTOR
DATA SELECTOR
Pin Description
Non connectionNC
Byte (x8 mode) enable inputBYTE#
GroundVss
Power supplyVcc
Upper byte selectUB#
Lower byte selectLB#
Output enableOE#
Write enableWE#
Chip selectCS1# &CS2
Data input/outputDQ 0 to DQ15
Address inputA0 to A19
FunctionPin name
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Note 1. -2.0V in case of AC (Pulse width ≤30ns)
2. Maximum voltage is +4.6V
Note 1. H:VIH L:VIL X: VIH or VIL
2. BYTE# pin supported by only TSOP and uTSOP types. When apply BYTE# =“L”, please assign LB#=UB#=“L”.
Operating Table
Absolute Maximum Ratings
ReadA-1High-ZDoutLHLLLHL
WriteA-1High-ZDinXLLLLHL
ReadDoutDoutDoutLHLLHHL
WriteDinDinDinXLLLHHL
Read from upper byteDoutDoutHigh-ZLHLHHHL
Write in upper byteDinDinHigh-ZXLLHHHL
Output disableHigh-ZHigh-ZHigh-ZHHXXXHL
Read from lower byteHigh-ZHigh-ZDoutLHHLHHL
Write in lower byteHigh-ZHigh-ZDinXLHLHHL
Stand byHigh-ZHigh-ZHigh-ZXXHHHXX
Stand byHigh-ZHigh-ZHigh-ZXXXXXLX
Stand byHigh-ZHigh-ZHigh-ZXXXXXXH
OperationDQ15DQ8-14DQ0-7OE#WE#UB#LB#BYTE#CS2CS1#
-40 to +85
0 to +70
ºCIver.
-40 to +85
0 to +70
ºCIver.
ºCR ver.
TbiasStorage temperature range under bias
ºC-65 to +150TstgStorage temperature
ºCR ver.
ToprOperation temperature
W0.7
PT
Power dissipation
V
-0.5*1to Vcc+0.3*2
VT
Terminal voltage on any pin relation toVss
V-0.5 to +4.6VccPower supply voltage relative to Vss
UnitValueSymbolParameter
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Note 1. Typical parameter indicates the value for the center of distribution at 3.0V (Ta= 25ºC), and not 100% tested.
2. BYTE# pin supported by only TSOP and uTSOP types.
BYTE# ≥Vcc-0.2V or BYTE# ≤0.2V
Recommended Operating Conditions
DC Characteristics
Iver.
Rver.
2ºC+85--40
2ºC+70-0
TaAmbient temperature range
1V0.4--0.2
VIL
Input low voltage
VVcc+0.2-2.4
VIH
Input high voltage
V000Vss
V3.63.02.7Vcc
Supply voltage
NoteUnitMax.Typ.Min.SymbolParameter
Note 1. –2.0V in case of AC (Pulse width ≤30ns)
2. Ambient temperature range depends on R/I-version. Please see table on page 2.
~+85ºCµA40--
IOL = 2mA
V0.4--
VOL
Output Low voltage
IOH = -1mA
V--2.4
VOH
Output hige voltage
V in ≥0V
(1) 0V≤CS2≤0.2V or
(2) CS2≥Vcc-0.2V,
CS1# ≥Vcc-0.2V or
(3)LB# =UB# ≥Vcc-0.2V,
CS2≥Vcc-0.2V,
CS1# ≤0.2V
Average value
~+70ºCµA25--
~+40ºCµA124-
~+25ºCµA62-
ISB1
Standby current
CS2=VIL
mA0.30.1-
ISB
Standby current
Cycle time = 1 µs, I I/O = 0 mA,
CS1#≤0.2V, CS2 ≥VCC-0.2V
VIH ≥VCC-0.2V , VIL ≤0.2V,
duty=100%
mA52-
Icc2
Min. cycle, duty =100%
I I/O = 0 mA, CS1# =VIL,
CS2=VIH Others = VIH / VIL
mA4025-
Icc1
Average operating
current
CS1# =VIH or CS2=VIL or
OE# = VIH or WE# =VIL or
LB# =UB# =VIH,VI/O=Vss to Vcc
µA1--
|ILo|
Output leakage current
Vin=Vss to VccµA1--
|ILI|
Input leakage current
Test conditions*2
UnitMax.
Typ.*1
Min.SymbolParameter
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Capacitance
AC Characteristics
•Input pulse levels: VIL= 0.4V,VIH=2.4V
•Input rise and fall time : 5ns
•Input and output timing reference levels : 1.4V
•Output load : See figures (Including scope and jig)
Note 1:This parameter is sampled and not 100% tested.
1V I/O = 0VpF10--
C I/O
Input / output capacitance
1V in = 0VpF10--C inInput capacitance
NoteTest conditionsUnitMax.Typ.Min.SymbolParameter
(Ta = +25ºC, f =1MHz)
CL=30pF
RL=500Ω
DQ
1.4V
Test Conditions (Vcc=2.7~3.6V, Ta = 0~+70ºC / -40~+85ºC *)
Note: Temperature range depends on R/I-version. Please see table on page 2.
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Read Cycle
0
0
0
0
5
5
10
-
10
-
-
-
-
55
Min.
R1LV1616R**-
5S (Note0)
20
20
20
20
-
-
-
55
-
35
55
55
70
-
Max.
1,2,3ns300250
tOHZ
Output disable to output in high-Z
1,2,3ns300250
tBHZ
LB#,UB# disable to high-Z
1,2,3ns300250
tCHZ2
1,2,3ns300250
tCHZ1
Chip deselect to output in high-Z
2,3ns-5-5
tOLZ
Output enable to output in low-Z
2,3ns-5-5
tBLZ
LB#,UB# enable to low-Z
2,3ns-10-10
tCLZ
Chip select to output in low-Z
ns85-70-
tBA
LB#,UB# access time
ns-10-10
tOH
Output hold from address change
ns45-35-
tOE
Output enable to output valid
ns85-70-
tACS2
ns85-70-
tACS1
Chip select access time
ns85-70-
tAA
Address access time
ns-85-70
tRC
Read cycle time
Max.Min.Max.Min. NotesUnit
R1LV1616R**-
8S
R1LV1616R**-
7S
SymbolParameter
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Write Cycle
Note0. 55ns parts can be supported under the condition of the input timing limitation toward SRAM on
customer’s system. Please contact our sales office in your region, in case of the inquiry for 55ns parts.
In case of tAA =70ns, tRC =70ns.
1. tCHZ,tOHZ, tWHZ and tBHZ are defined as the time at which the outputs achieve the open circuit conditions
and are not referred to output voltage levels.
2. This parameter is sampled and not 100% tested.
3. AT any given temperature and voltage condition, tHZ max is less than tLZ min both for a given device and
form device to device.
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE# and a low LB# or a low UB#.
A write begins at the latest transition among CS1# going low, CS2 going high, WE# going low and LB#
going low or UB# going low .
A write ends at the earliest transition among CS1# going high, CS2 going low, WE# going high and LB#
going high or UB# going high. tWP is measured from the beginning of write to the end of write.
5. tCW is measured from the later of CS1# going low or CS2 going high to end of write.
6. tAS is measured the address valid to the beginning of write.
7. tWR is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.
0
0
5
0
25
0
0
50
40
55
50
55
Min.
R1LV1616R**-
5S (Note0)
20
20
-
-
-
-
-
-
-
-
-
-
Max.
1,2ns300250
tWHZ
Write to output in high-Z
Write pulse width
1,2ns300250
tOHZ
Output disable to output in high-Z
2ns-5-5
tOW
Output active from end of write
ns-0-0
tDH
Data hold from write time
ns-40-35
tDW
Data to write time overlap
7ns-0-0
tWR
Write recovery time
6ns-0-0
tAS
Address setup time
ns-70-65
tBW
LB#,UB# valid to end of write
4ns-60-55
tWP
5ns-70-65
tCW
Chip selection to end of write
ns-70-65
tAW
Address valid to end of write
ns-85-70
tWC
Write cycle time
Max.Min.Max.Min. NotesUnit
R1LV1616R**-
8S
R1LV1616R**-
7S
SymbolParameter
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Byte enable (supported by only 48-pin TSOP and 52-pin µTSOP )
BYTE# Timing Waveform
tBS
BYTE#
CS1# tBR
CS2
-
-
Max.
5
5
Min.
R1LV1616R**-5S
ms-5-5
tBR
Byte recovery time
ms-5-5
tBS
Byte setup time
Max.Min.Max.Min. NotesUnit
R1LV1616R**-8SR1LV1616R**-7S
SymbolParameter
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Timing Waveform
Read Cycle
LB#,UB#
A0~19
(Word Mode)
A-1~19
(Byte Mode)
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
tAA
WE# = "H" level
OE#
Valid data
CS1#
CS2
tACS1
tBA
tCLZ
tBLZ
tOE
tOLZ tOHZ
tCHZ1
tBHZ
tOH
Valid address
tACS2
tCHZ2
tRC
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Write Cycle (1) (WE# Clock)
tWC
A0~19
(Word Mode)
A-1~19
(Byte Mode)
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
LB#,UB#
WE#
CS1#
CS2
tCW
tBW
tAS
tAW
tWP
tWHZ
tOW
tDW
tWR
Valid data
Valid address
tCW
tDH
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Write Cycle (2) (CS1# ,CS2 Clock, OE#=VIH)
A0~19
(Word Mode)
A-1~19
(Byte Mode)
Valid data
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
WE#
CS1#
CS2
tAS
tBW
tWR
LB#,UB#
tCW
tWP
tDW tDH
Valid address
tCW
tWC
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
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Write Cycle (3) ( LB#,UB# Clock, OE#=VIH)
tWC
A0~19
(Word Mode)
A-1~19
(Byte Mode)
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
WE#
CS1#
CS2
LB#,UB#
Valid data
tAS tBW tWR
tCW
tWP
tDW tDH
Valid address
tCW
R1LV1616R Series
REJ03C0101-0400Z Rev.4.00 2007.09.12
page 15 of 15
Data Retention Characteristics
Note 1. Typical parameter of IccDR indicates the value for the center of distribution at Vcc=3.0V and not 100% tested.
2. BYTE# pin supported only by TSOP and uTSOP types. BYTE# ≥Vcc-0.2V or BYTE# ≤0.2V
3. Also CS2 controls address buffer, WE# buffer ,CS1# buffer ,OE# buffer ,LB# ,UB# buffer and Din buffer .If CS2
controls data retention mode,Vin levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance
state. If CS1# controls data retention mode, CS2 must be CS2 ≥Vcc-0.2V or 0V ≤CS2 ≤0.2V. The other input
levels (address, WE# ,OE#,CS1#,LB#,UB#,I/O) can be in the high impedance state.
Data Retention timing Waveform (1) (LB#,UB# Controlled)
Data Retention timing Waveform (2) (CS1# Controlled)
Data Retention timing Waveform (3) (CS2 Controlled)
LB#
UB#
Vcc tCDR tR
2.4V2.4V
2.70V
LB# =UB# ≥Vcc-0.2V
CS2
Vcc
tCDR tR
0.2V0.2V
2.70V
0V ≤CS2 ≤0.2V
Vcc
CS1#
tCDR tR
2.4V2.4V
2.70V
CS1# ≥Vcc-0.2V
~+85ºC
µA
40--
ms
--5
tR
Operation recovery time See retention waveform
ns
--0
tCDR
Chip deselect to data retention time
~+70ºC
µA
25--
~+40ºC
µA
124-
Vcc=3.0V,Vin≥0V
(1) 0V ≤CS2 ≤0.2V or
(2) CS2 ≥Vcc-0.2V,
CS1# ≥Vcc-0.2V or
(3) LB# =UB# ≥Vcc-0.2V,
CS2 ≥Vcc-0.2V,
CS1# ≤0.2V
Average value
Test conditions*2,3
UnitTyp.*1
~+25ºC
µA
62-
IccDR
Data retention current
V in ≥0V
(1) 0V ≤CS2 ≤0.2V or
(2) CS2 ≥Vcc-0.2V,
CS1# ≥Vcc-0.2V or
(3) LB# =UB# ≥Vcc-0.2V,
CS2 ≥Vcc-0.2V,
CS1# ≤0.2V
V3.6-2.0
VDR
Vcc for data retention
Max.MIn.SymbolParameter
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
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result of errors or omissions in the information included in this document.
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of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
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or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
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have no liability for damages arising out of the uses set forth above.
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(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
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alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
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any other inquiries.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0
To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although t he old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5. When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such informati on is error free. Renesas Elect ronics assumes no l i ability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
7. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electron ics data sheets or data books, etc.
“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appl ian ces; machine tools; personal electronic equi pment; and industrial robo ts.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”: Aircraft; aerospace equi pment; submersible rep eat ers; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
interven tion (e.g. excision, etc.), an d any other applications or purposes that pose a direct threat to human life.
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific chara cterist ics such as the o ccurren ce of failure at a certai n rate an d malfunct ion s under certai n u se cond ition s. Further,
Renesas Electronics products are not sub j ect to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Ren esas E lectronics sales office for details as to environmental matters such as the environ mental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electron i cs Corporation an d al so includes its majori ty-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
