GP1S51VJ000F
1
Sheet No.: D3-A02401EN
Date Oct. 3. 2005
© SHARP Corporation
Notice The content of data sheet is subject to change without prior notice.
In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.
GP1S51VJ000F
Gap : 3mm Slit : 0.5mm
Phototransistor Output,
Case package Transmissive
Photointerrupter
■Description
GP1S51VJ000F is a standard, phototransistor output,
transmissive photointerrupter with opposing emitter and
detector in a case, providing non-contact sensing. For
this family of devices, the emitter and detector are insert-
ed in a case, resulting in a through-hole design.
The case includes additional screw fixing holes, on
both sides 3.2mm diameter.
■Features
1. Transmissive with phototransistor output
2. Highlights:
• Verical Slit for alternate motion detection
• Includes additional screw fi xing holes
3. Key Parameters:
• Gap Width : 3mm
• Slit Width (detector side): 0.5mm
• Package : 12.2×10×18mm
4. Lead free and RoHS directive compliant
■Agency approvals/Compliance
1. Compliant with RoHS directive
■Applications
1. General purpose detection of object presence or mo-
tion.
2. Example : Printer, FAX, Optical storage unit
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Sheet No.: D3-A02401EN
GP1S51VJ000F
■Internal Connection Diagram
■Outline Dimensions (Unit : mm)
Product mass : approx. 0.7g
• Unspecifi ed tolerance shall be as follows ;
Dimensions (d) Tolerance
d≤6±0.1
6<d≤18 ±0.2
• ( ) : Reference dimensions
Anode
Cathode
Collector
Emitter
1
1
2
4
3
2
3
4
Top view
(2.5)
(Detctor center)
7.5
10
5
7
10MIN.
3.5
12
18
6
S51
5
3+0.2
−0.1
AB
AʻBʻ
B-Bʼ
section
12.2±0.3
0.4+0.3
−0.1
0.45+0.3
−0.1
2−φ3.2±0.2
Date code
(Both side)
(9.2) (2.54)
2
14
3
0.5
1.5
2−R3
A-Aʼ
section
0.5
Sharp mark “S”
Model No.
2
Top view
Dip soldering material : Sn−3Ag−0.5Cu
3
Sheet No.: D3-A02401EN
GP1S51VJ000F
repeats in a 10 year cycle
Date code (2 digit)
1st digit 2nd digit
Year of production Month of production
A.D. Mark Month Mark
2000 0 1 1
2001 1 2 2
2002 2 3 3
2003 3 4 4
2004 4 5 5
2005 5 6 6
2006 6 7 7
2007 7 8 8
2008 8 9 9
2009 9 10 X
2010 0 11 Y
: : 12 Z
Country of origin
Japan, Indonesia or Philippines
(Indicated on the packing case)
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Sheet No.: D3-A02401EN
GP1S51VJ000F
■Absolute Maximum Ratings
■Electro-optical Characteristics
(Ta=25˚C)
Parameter Symbol Rating Unit
Input
∗1 Forward current IF50 mA
∗1, 2Peak forward current IFM 1A
Reverse voltage VR6V
Power dissipation P 75 mW
Output
Collector-emitter voltage
VCEO 35 V
Emitter-collector voltage
VECO 6V
Collector current
IC20 mA
∗1 Collector power dissipation PC75 mW
Operating temperature Topr −25 to +85 ˚C
Storage temperature Tstg −40 to +100 ˚C
∗3Soldering temperature Tsol 260 ˚C
∗1
Refer to Fig. 1, 2, 3
∗2 Pulse width ≤ 100μs, Duty ratio=0.01
∗3 For 5s or less
(Ta=25˚C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input
Forward voltage VFIF=20mA −1.25 1.4 V
Peak forward voltage VFM IFM=0.5A 3 4 V
Reverse current IRVR=3V −−
10 μA
Output Collector dark current ICEO VCE=20V −1 100 nA
Transfer
charac-
teristics
Collector current ICVCE=5V, IF=20mA 0.5 −5mA
Collector-emitter saturation voltage VCE(sat) IF=40mA, IC=0.5mA −−
0.4 V
Response time Rise time trVCE=2V, IC=2mA, RL=100Ω−315
μs
Fall time tf−420
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Sheet No.: D3-A02401EN
GP1S51VJ000F
Fig.5 Collector Current vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
Fig.3 Peak Forward Current vs.
Duty Ratio
Fig.4 Forward Current vs.
Forward Voltage
Peak forward current IFM (mA)
Duty ratio
100
10
10−210−1
1 000
Pulse width≤100μs
Ta=25˚C
1
Forward current IF (mA)
Foward voltage VF (V)
100
10
1
3.532.521.510.50
25˚C
0˚C
−25˚C
50˚C
Ta=75˚C
Collector current IC (mA)
Forward current IF (mA)
0
0
VCE=5V
Ta=25˚C
12
8
10
6
4
2
10 20 30 40 50
Collector current IC (mA)
Collector-emitter VCE (V)
789106
7
5
6
3
4
2
1
0054321
IF=50mA
40mA
30mA
20mA
10mA
Ta=25˚C
Fig.1 Forward Current vs. Ambient
Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Forward current IF (mA)
Ambient temperature Ta (˚C)
−25 0 25 50 75 85 100
0
10
20
30
40
50
60
Collector power dissipation PC (mW)
Ambient temperature Ta (˚C)
−25 0 25 50 75 85 100
0
20
15
40
60
80
100
120
75
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Sheet No.: D3-A02401EN
GP1S51VJ000F
Fig.7 Collector Current vs.
Ambient Temperature
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
Fig.9 Response Time vs. Load Resistance Fig.10 Test Circuit for Response Time
Fig.11 Frequency Response Fig.12 Collector Dark Current vs.
Ambient Temperature
Collector current IC (mA)
Ambient temperature Ta (˚C)
025−25 50 10075
4IF=20mA
VCE=5V
3
2
1
0
Response time (μs)
Load resistance RL (kΩ)
10
1010.1
0.1
0.01
VCE=2V
IC=2mA
Ta=25˚C
100
1
tf
tr
td
ts
Collector-emitter saturation voltage VCE (sat) (V)
Ambient temperature Ta (˚C)
IF=40mA
IC=0.5mA
0.25
0.2
0.15
0.1
0.05
−25 75 10050250
0
Voltage gain AV (dB)
Frequency f (Hz)
106
105
104
0
−5
−10
−15
−20
103
102
VCE=2V
IC=2mA
Ta=25˚C
1kΩ
100Ω
RL=
10kΩ
5
Collector dark current ICEO (A)
Ambient temperature Ta (˚C)
7550 10025
0−25
VCE=20V
10−10
10−9
10−8
10−7
10−6
10%
Output
Input
90%
Input Output
RD
VCC
RL
td
tr
ts
tf
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Sheet No.: D3-A02401EN
GP1S51VJ000F
Fig.13 Detecting Position Characteristics (1) Fig.14
Detecting Position Characteristics (2)
Relative collector current (%)
Shield moving distance L (mm)
−1.5
0
50
100
−1−0.5 0 0.5 1 1.5 2 2.5
Sensor
Shield
L
+−
IF=20mA, VCE=5V
Ta=25˚C
0
Relative collector current (%)
−3
0
50
100
−2−1012345
−
+
0
L
Shield
Sensor
IF=20mA, VCE=5V
Ta=25˚C
Shield moving distance L (mm)
Remarks : Please be aware that all data in the graph are just for reference and not for guarantee.
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Sheet No.: D3-A02401EN
GP1S51VJ000F
■Design Considerations
●Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
4mm or more
This product is not designed against irradiation and incorporates non-coherent IRED.
●Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
●Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category Material Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm) Response time (μs)
Phototransistor Silicon (Si) 800 400 to 1 200 3
• Photo emitter (qty. : 1)
Category Material Maximum light emitting
wavelength (nm) I/O Frequency (MHz)
Infrared emitting diode
(non-coherent) Gallium arsenide (GaAs) 950 0.3
• Material
Case Lead frame plating
Black NORYL resin Solder dip. (Sn−3Ag−0.5Cu)
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Sheet No.: D3-A02401EN
GP1S51VJ000F
■Manufacturing Guidelines
●Soldering Method
Flow Soldering:
Soldering should be completed below 260˚C and within 5 s.
Please take care not to let any external force exert on lead pins.
Please don't do soldering with preheating, and please don't do soldering by refl ow.
Hand soldering
Hand soldering should be completed within 3 s when the point of solder iron is below 350C.
Please solder within one time.
Please don't touch the terminals directly by soldering iron.
Soldered product shall treat at normal temperature.
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the
impact on the junction between the device and PCB varies depending on the cooling and soldering
conditions.
Flux
Some fl ux, which is used in soldering, may crack the package due to synergistic effect of alcohol in fl ux and
the rise in temperature by heat in soldering. Therefore, in using fl ux, please make sure that it does not have
any infl uence on appearance and reliability of the photointerrupter.
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Sheet No.: D3-A02401EN
GP1S51VJ000F
●Cleaning instructions
Solvent cleaning :
Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output,
cleaning time, PCB size or device mounting condition etc.
Please test it in actual using condition and confi rm that doesn't occur any defect before starting the ultrasonic
cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
●Presence of ODC
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)
Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).
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Sheet No.: D3-A02401EN
GP1S51VJ000F
■Package specifi cation
●Case package
Package materials
Anti-static plastic bag : Polyethtylene
Moltopren : Urethane
Partition : Corrugated fi berboard
Packing case : Corrugated fi berboard
Package method
100 pcs of products shall be packaged in a plastic bag, Ends shall be fi xed by stoppers. The bottom ot the
packing case is covered with moltopren, and the partition is set in the packing case. Each partition should
have 1 plastic bag.
The 10 plastic bags containing a product are put in the packing case.
Moltopren should be located after all product are settled (1 packing contains 1 000 pcs).
Packing composition
Moltopren
Partition
Anti-static
plastic bag
Packing case
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Sheet No.: D3-A02401EN
GP1S51VJ000F
■Important Notices
· The circuit application examples in this publication
are provided to explain representative applications of
SHARP devices and are not intended to guarantee any
circuit design or license any intellectual property rights.
SHARP takes no responsibility for any problems related
to any intellectual property right of a third party resulting
from the use of SHARP's devices.
· Contact SHARP in order to obtain the latest device
specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the
specifi cations, characteristics, data, materials, structure,
and other contents described herein at any time
without notice in order to improve design or reliability.
Manufacturing locations are also subject to change
without notice.
· Observe the following points when using any devices
in this publication. SHARP takes no responsibility for
damage caused by improper use of the devices which
does not meet the conditions and absolute maximum
ratings to be used specifi ed in the relevant specifi cation
sheet nor meet the following conditions:
(i) The devices in this publication are designed for use
in general electronic equipment designs such as:
--- Personal computers
--- Offi ce automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii) Measures such as fail-safe function and redundant
design should be taken to ensure reliability and safety
when SHARP devices are used for or in connection
with equipment that requires higher reliability such as:
--- Transportation control and safety equipment (i.e.,
aircraft, trains, automobiles, etc.)
--- Traffi c signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii) SHARP devices shall not be used for or in
connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g.,
scuba).
· If the SHARP devices listed in this publication fall
within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Law of Japan, it
is necessary to obtain approval to export such SHARP
devices.
· This publication is the proprietary product of SHARP
and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be
reproduced or transmitted in any form or by any means,
electronic or mechanical, for any purpose, in whole or in
part, without the express written permission of SHARP.
Express written permission is also required before any
use of this publication may be made by a third party.
· Contact and consult with a SHARP representative
if there are any questions about the contents of this
publication.
[H149]
