NTE5514 thru NTE5516
Silicon Controlled Rectifier (SCR)
20 Amp, 1/2” Press Fit
Absolute Maximum Ratings:
Repetitive Peak Off−State Voltage (TJ = +100°C), VDRM
NTE5514 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5515 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5516 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Repetitive Peak Reverse Voltage (TJ = +100°C), VRRM
NTE5514 200V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5515 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5516 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On−State Current (TC = +75°C), IT(RMS) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50Hz or 60Hz), ITSM 200A. . . . . . . . .
Peak Gate−Trigger Current (3μs Max), IGTM 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate−Power Dissipation (IGT ≤ IGTM for 3μs Max), PGM 20W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate−Power Dissipation, PG(AV) 0.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperatue Range, Topr −40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg −40° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction−to−Case, RthJC 1.3°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off−State Current IDRM,
IRRM
TJ = +100°C, Gate Open,
VDRM and VRRM = Max. Rating
− − 2.0 mA
Maximum On−State Voltage (Peak) VTM TC = +25°C− − 1.9 V
Peak On−State Current ITM − − 40 A
DC Holding Current IHTC = +25°C, Gate Open − − 50 mA
DC Gate−Trigger Current IGT Anode Voltage = 12V, RL = 30Ω, TC = +25°C− − 25 mA
DC Gate−Trigger Voltage VGT Anode Voltage = 12V, RL = 30Ω, TC = +25°C− − 2.0 V
Gate Controlled Turn−On Time tgt td + tr, IGT = 150mA −2.5 −μs
Critical Rate−of−Rise of
Off−State Voltage
Critical
dv/dt
TC = +100°C, Gate Open −100 −V/μs
.155 (3.93) Max Cathode
Gate
.063 (1.6)
Anode
.085
(2.15)
.475 (12.09)
Max
.505 (12.85)
Max
.380
(9.65)
Max
.767
(19.5)
Max
